Charged particle beam device
Signal electrons with high energy that pass near an optical axis, for example, backscattered electrons or secondary electrons in a booster optical system, can be detected. Therefore, there is provided a charged particle beam device including: a charged particle beam source configured to generate a charged particle beam; an objective lens configured to focus the charged particle beam to a sample; and a first charged particle detecting element disposed between the charged particle beam source and the objective lens and configured to detect charged particles generated by an interaction between the charged particle beam and the sample, in which a detection surface of the first charged particle detecting element is disposed on a center axis of the objective lens.
1. A charged particle beam device comprising:
a charged particle beam source configured to generate a charged particle beam;
an objective lens configured to focus the charged particle beam to a sample;
a first charged particle detecting element disposed between the charged particle beam source and the objective lens and configured to detect charged particles generated by an interaction between the charged particle beam and the sample; and
a drive mechanism configured to adjust an angle formed between a position of the detection surface of the first charged particle detecting element or the detection surface of the first charged particle detecting element and the center axis of the objective lens, wherein
a detection surface of the first charged particle detecting element is disposed on an center axis of the objective lens.
2. A charged particle beam device comprising:
a charged particle beam source configured to generate a charged particle beam;
an objective lens configured to focus the charged particle beam to a sample;
a first charged particle detecting element disposed between the charged particle beam source and the objective lens and configured to detect charged particles generated by an interaction between the charged particle beam and the sample; and
a first charged particle beam aperture disposed on an optical axis of the charged particle beam and having an opening portion, wherein
the first charged particle detecting element is disposed on a center position of the opening portion of the first charged particle beam aperture.
3. The charged particle beam device according to claim 2 , wherein
the first charged particle beam aperture is an annular aperture having a shielding portion that shields the charged particle beam on the center position of the opening portion, and
the first charged particle detecting element is disposed in the shielding portion of the annular aperture.
4. The charged particle beam device according to claim 2 , further comprising:
a second charged particle detecting element disposed around the opening portion of first charged particle beam aperture, wherein
signal output of the first charged particle detecting element and signal output of the second charged particle detecting element are able to be separately output.
5. The charged particle beam device according to claim 2 , further comprising:
a second charged particle beam aperture in which the charged particle detecting element is not disposed in the opening portion; and
a charged particle beam aperture unit that selectively supports the first charged particle beam aperture and the second charged particle beam aperture.
6. The charged particle beam device according to claim 2 , wherein
the charged particle detecting element includes a scintillator configured to convert the charged particles generated by the interaction between the charged particle beam and the sample into scintillator light; and a light detecting element configured to detect the scintillator light.
7. The charged particle beam device according to claim 1 , further comprising:
a deflector group configured to deflect the charged particle beam, wherein
the charged particle beam generated from the charged particle beam source avoids the detection surface of the first charged particle detecting element by the deflectors and is incident on the objective lens.
8. The charged particle beam device according to claim 1 , further comprising:
an acceleration mechanism configured to accelerate the charged particles generated by the interaction between the charged particle beam and the sample, wherein
the first charged particle detecting element is configured to detect the charged particles accelerated by the acceleration mechanism.
9. A charged particle beam device comprising:
a charged particle beam source configured to generate a charged particle beam;
an objective lens configured to focus the charged particle beam to a sample;
a first charged particle detecting element disposed between the charged particle beam source and the objective lens and configured to detect charged particles generated by an interaction between the charged particle beam and the sample; and
a drive mechanism configured to adjust an angle formed between a position of a detection surface of the first charged particle detecting element or the detection surface of the first charged particle detecting element and an center axis of the objective lens, wherein
the detection surface of the first charged particle detecting element is disposed on the center axis of the objective lens, and detects an interference between the charged particles generated by the interaction between the charged particle beam and the sample.
10. The charged particle beam device according to claim 9 , wherein
the drive mechanism includes an electric drive mechanism.
11. The charged particle beam device according to claim 9 , further comprising:
a second charged particle detecting element, wherein
a detection surface of the second charged particle detecting element is disposed on the optical axis of the objective lens and between the first charged particle detecting element and the sample.
12. The charged particle beam device according to claim 9 , further comprising:
an annular aperture having a shielding portion on a center position of an opening portion,
wherein the shielding portion of the annular aperture is disposed on the optical axis of the objective lens between the first charged particle detecting element and the sample.