Semiconductor module and method for manufacturing same
A semiconductor module includes a base material, an alignment mark provided on a surface of the base material and plural semiconductor elements that are individually provided on the surface of the base material while being juxtaposed to the alignment mark and that are separated from each other. Accordingly, a semiconductor module and a method for manufacturing the semiconductor module are provided which may prevent an alignment mark from being peeled off and remaining as a foreign object and may improve reliability.
1. A semiconductor module comprising:
a base material;
an alignment mark that is provided on a surface of the base material; and
a plurality of semiconductor elements that are individually provided on the surface of the base material while being juxtaposed to the alignment mark and that are separated from each other, wherein
first connection patterns are provided on the surface of the base material,
the alignment mark is configured with a first alignment mark segment and a second alignment mark segment, and
the second alignment mark segment and one of the first connection patterns are connected with each other via a bump.
2. The semiconductor module according to claim 1 , wherein
a surface of the alignment mark and surfaces of the plurality of semiconductor elements are provided on a substantially same plane.
3. The semiconductor module according to claim 1 , wherein
a plurality of the alignment marks are arranged in an outer peripheral portion of the plurality of semiconductor elements.
4. The semiconductor module according to claim 1 , wherein
a resin layer is provided between the plurality of semiconductor elements.
5. A semiconductor module comprising:
a base material; and
a plurality of semiconductor elements and an alignment mark which are arranged on a surface of the base material, wherein
first connection patterns are provided on the surface of the base material and second connection patterns are provided on surfaces of semiconductor elements, respectively,
the base material and the plurality of semiconductor elements are connected together by the first connection patterns and the second connection patterns,
a first alignment mark segment formed of a same material as the first connection patterns is provided on the surface of the base material, and
a second alignment mark segment, which is configured with a first layer formed with a same material as that forming the second connection patterns and a second layer formed with a same material as that forming the semiconductor elements, is formed above the first alignment mark segment, and
the alignment mark is formed with the first alignment mark segment and the second alignment mark segment, wherein
the second alignment mark segment and one of the first connection patterns are connected with each other via a bump.
6. The semiconductor module according to claim 5 , wherein
the base material and the plurality of semiconductor elements are connected together by the first connection patterns and the second connection patterns and form a current path, and
a portion between the first alignment mark segment and the second alignment mark segment is a non-current path.
7. The semiconductor module according to claim 5 , wherein
a resin layer is provided between the plurality of semiconductor elements.