Stitching two-dimensional atomic crystals by atomic layer deposition as stable interfaces for batteries

1. An anode comprising:

a current collector; and

an interfacial layer disposed over the current collector,

wherein the interfacial layer includes a film of a layered material including defect sites and an artificial SEI enriched with LiF and selectively disposed over the defect sites of the film, while other regions of the film remain exposed from the artificial SEI.

2. The anode of claim 1 , wherein the layered material includes hexagonal boron nitride, graphene, a layered transition metal oxide, or a layered transition metal chalcogenide.

3. The anode of claim 1 , wherein the film is polycrystalline.

4. The anode of claim 1 , wherein the reinforcing material is disposed as nanostructures over the film.

5. The anode of claim 1 , wherein the reinforcing material is disposed as discrete coating regions that are spaced apart from one another over the film.

6. The anode of claim 1 , further comprising an anode material disposed between the current collector and the interfacial layer.

7. The anode of claim 6 , wherein the anode material is lithium metal.

8. A battery comprising:

the anode of claim 1 ;

a cathode; and

an electrolyte disposed between the anode and the cathode.

9. A method of forming an anode for a battery, comprising:

providing a current collector and a film of a layered material including defect sites disposed over the current collector; and

performing atomic layer deposition to deposit an artificial SEI enriched with LiF selectively on the defect sites of the film, while other regions of the film remain exposed from the artificial SEI.

10. The anode of claim 1 , wherein the artificial SEI consists of lithium fluoride.

11. The method of claim 9 , wherein providing the current collector and the film includes forming the film, via chemical vapor deposition, over a substrate, and transferring the film from the substrate to the current collector.

12. The method of claim 9 , wherein the layered material includes hexagonal boron nitride, graphene, a layered transition metal oxide, or a layered transition metal chalcogenide.

13. The method of claim 9 , wherein performing atomic layer deposition includes sequentially performing a first atomic layer deposition cycle to introduce a chemical precursor including lithium, followed by performing a second atomic layer deposition cycle to introduce a chemical precursor including fluorine.

14. The method of claim 9 , wherein the reinforcing material provides a surface coverage of the film of up to 60%.

15. The method of claim 9 , wherein the artificial SEI consists of lithium fluoride.