IP Library Granted Patent US 10,964,508
Granted Patent B2
US 10,964,508 · App. 16/620,065 · Granted Mar 30, 2021

Charged-particle beam device

Inventors: Yuzuru Mizuhara (Tokyo, JP); Kouichi Kurosawa (Tokyo, JP)
Assignee: Hitachi High-Tech Corporation
H01J37/05H01J37/244H01J2237/057
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Quick Facts
Patent No.
US 10,964,508
App. No.
16/620,065
Granted
Mar 30, 2021
Kind
B2
Abstract

The purpose of the present invention is to provide a charged-particle beam device capable of stable performance of processes such as a measurement or test, independent of fluctuations in sample electric electric potential or the like. To this end, this charged-particle beam device comprises an energy filter for filtering the energy of charged particles released from the sample and a deflector for deflecting the charged particles released from the sample toward the energy filter. A control device generates a first image on the basis of the output of a detector, adjusts the voltage applied to the energy filter so that the first image reaches a prescribed state, and calculates deflection conditions for the deflector on the basis of the post-adjustment voltage applied to the energy filter.

Claims (76)

1. A charged-particle beam device comprising:

a detector that detects charged particles obtained by irradiating a sample with a charged- particle beam that is emitted from a charged-particle source;

an energy filter that filters energy of charged particles emitted from the sample;

a deflector that deflects the charged particles emitted from the sample towards the energy filter;

a storage medium that stores a deflection condition of the deflector; and

a control device that adjusts a voltage applied to the energy filter, wherein

the control device

generates a first image based on an output of the detector,

adjusts the voltage applied to the energy filter so that the first image is brought into a predetermined state,

calculates a first parameter that changes corresponding to energy of the charged particles emitted from the sample based on the adjusted voltage applied to the energy filter, and

controls the deflector based on a second parameter that is obtained by referring to the first parameter or substituting the first parameter in an arithmetic expression or a table that indicates a relationship between the first parameter stored in the storage medium and the second parameter indicating the deflection condition, wherein

a reference image is stored in the storage medium, and

the control device controls the voltage applied to the energy filter so that a contrast of the first image matches with a contrast of the reference image, or that the contrast of the first image falls within a predetermined range based on the contrast of the reference image.

2. A charged-particle beam device comprising:

a detector that detects charged particles obtained by irradiating a sample with a charged- particle beam that is emitted from a charged-particle source;

an energy filter that filters energy of charged particles emitted from the sample;

a deflector that deflects the charged particles emitted from the sample towards the energy filter;

a storage medium that stores a deflection condition of the deflector; and

a control device that adjusts a voltage applied to the energy filter, wherein

the control device

generates a first image based on an output of the detector,

adjusts the voltage applied to the energy filter so that the first image is brought into a predetermined state,

calculates a first parameter that changes corresponding to energy of the charged particles emitted from the sample based on the adjusted voltage applied to the energy filter, and

controls the deflector based on a second parameter that is obtained by referring to the first parameter or substituting the first parameter in an arithmetic expression or a table that indicates a relationship between the first parameter stored in the storage medium and the second parameter indicating the deflection condition, wherein

a reference image is stored in the storage medium,

the control device controls the voltage applied to the energy filter so that a contrast of the first image matches with a contrast of the reference image, or that the contrast of the first image falls within a predetermined range based on the contrast of the reference image, and

the control device controls the deflector using the first parameter when the contrast of the first image does not match with the contrast of the reference image or when the contrast of the first image does not fall within the predetermined contrast range based on the contrast of the reference image after the energy filter is adjusted.

3. A charged-particle beam device comprising:

a detector that detects charged particles obtained by irradiating a sample with a charged-particle beam that is emitted from a charged-particle source;

an energy filter that filters energy of charged particles emitted from the sample;

an upper deflector that deflects the charged particles emitted from the sample towards the energy filter;

a lower deflector that deflects the charged particles emitted from the sample towards an intersection point of a deflection fulcrum of the upper deflector and an optical axis of the charged-particle beam; and

a control device that controls the upper deflector and the lower deflector, wherein:

the upper and lower deflectors are arranged on the optical axis of the charged-particle beam; and

the control device adjusts a deflection condition of the upper deflector and the lower deflector corresponding to an adjustment amount of the energy filter.

4. The charged-particle beam device according to claim 3 , wherein

the energy filter is a bandpass filter.

5. The charged-particle beam device according to claim 3 , wherein

the energy filter is a highpass filter.

6. The charged-particle beam device according to claim 3 , further comprising:

a storage medium that stores the deflection condition, wherein

the control device

generates a first image based on an output of the detector,

adjusts the energy filter so that the first image is brought into a predetermined state,

calculates a first parameter that changes corresponding to energy of the charged particles emitted from the sample based on a filtering condition of the energy filter after the adjustment, and

controls the upper deflector and the lower deflector based on a second parameter that is obtained by referring to the first parameter or substituting the first parameter in an arithmetic expression or a table that indicates a relationship between the first parameter stored in the storage medium and the second parameter indicating the deflection condition.

7. The charged-particle beam device according to claim 6 , wherein

the first parameter indicates the energy of the charged particles emitted from the sample.

8. The charged-particle beam device according to claim 6 , wherein

the second parameter is at least one of deflection sensitivities of the upper and lower deflectors, signal electron coordinates in the upper and lower deflectors, and signal electron speeds in the upper and lower deflectors.

9. The charged-particle beam device according to claim 3 , wherein

the upper deflector and the lower deflector are orthogonal electromagnetic field generators.

10. A charged-particle beam device comprising:

a detector that detects charged particles obtained by irradiating a sample with a charged- particle beam that is emitted from a charged-particle source;

an energy filter that filters energy of charged particles emitted from the sample;

a first charged-particle beam deflector that deflects the charged-particle beam out of an optical axis;

a second charged-particle beam deflector that deflects the charged-particle beam deflected by the first charged-particle beam deflector to be parallel to the optical axis of the charged-particle beam;

an upper deflector that deflects the charged-particle beam deflected by the second charged-particle beam deflector towards the optical axis of the charged-particle beam;

a lower deflector that deflects the charged-particle beam deflected by the upper deflector so that the charged-particle beam travels along the optical axis of the charged-particle beam; and

a control device that controls the first charged-particle beam deflector, the second charged-particle beam deflector, the upper deflector, and the lower deflector, wherein

the control device adjusts a deflection condition of the first charged-particle beam deflector, the second charged-particle beam deflector, the upper deflector, and the lower deflector corresponding to an adjustment amount of the energy filter.

11. The charged-particle beam device according to claim 10 , further comprising:

a storage medium that stores the deflection condition of the deflectors, wherein

the control device

generates a first image based on an output of the detector,

adjusts the energy filter so that the first image is brought into a predetermined state,

calculates a first parameter that changes corresponding to energy of the charged particles emitted from the sample based on a filtering condition of the energy filter after the adjustment, and

controls the first charged-particle beam deflector, the second charged-particle beam deflector, the upper deflector, and the lower deflector based on a second parameter that is obtained by referring to the first parameter or substituting the first parameter in an arithmetic expression or a table that indicates a relationship between the first parameter stored in the storage medium and the second parameter indicating the deflection condition.

12. The charged-particle beam device according to claim 6 , wherein

the second parameter includes at least two of deflection sensitivities of the upper and lower deflectors, signal electron coordinates in the upper and lower deflectors, and signal electron speeds in the upper and lower deflectors.

13. The charged-particle beam device according to claim 6 , wherein

the second parameter includes deflection sensitivities of the upper and lower deflectors, signal electron coordinates in the upper and lower deflectors, and signal electron speeds in the upper and lower deflectors.

14. The charged-particle beam device according to claim 6 , wherein

the second parameter includes deflection sensitivities of the upper and lower deflectors, signal electron coordinates in the upper and lower deflectors, signal electron speeds in the upper and lower deflectors, and a distance between the upper and lower deflectors.

15. The charged-particle beam device according to claim 6 , wherein

the second parameter includes deflection sensitivities of the upper and lower deflectors, signal electron coordinates in the upper and lower deflectors, and signal electron speeds in the upper and lower deflectors, and a distance between the upper and lower deflectors and an image shift amount.

Assignments (2)
CHANGE OF NAME Recorded Apr 14, 2020
From: HITACHI HIGH-TECHNOLOGIES CORPORATION
To: HITACHI HIGH-TECH CORPORATION
Reel/Frame 052398/0249 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 6, 2019
From: MIZUHARA, YUZURU; KUROSAWA, KOUICHI
To: HITACHI HIGH-TECHNOLOGIES CORPORATION
Reel/Frame 051201/0076 →
Continuity (1)
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