Metal-overcoated grating and method
View Patent ↗Metallic overcoated diffraction gratings are particularly useful for high average power laser pulse compression. A dielectric oxide layer is attached to an etch-stop layer, where the dielectric oxide layer comprises a grating pattern including grating lines. Sidewalls of the grating lines taper together toward an upper surface of the dielectric oxide layer. A metallic overcoat is attached to the etch-stop layer and the dielectric oxide layer.
1. An apparatus, comprising: a substrate; an etch-stop layer fixedly attached to said substrate; a dielectric oxide layer fixedly attached to said etch-stop layer, wherein said dielectric oxide layer comprises a grating pattern including grating lines, wherein sidewalls of said grating lines taper together toward an upper surface of said dielectric oxide layer, and wherein said tapered sidewalls have a non-zero curvature; and a metallic overcoat fixedly attached to said etch-stop layer and said dielectric oxide layer, wherein the metallic overcoat fills spaces between adjacent grating lines and forms grating ridges above the grating lines.
2. The apparatus of claim 1 , wherein said substrate is polished.
3. The apparatus of claim 2 , wherein said etch-stop layer is etch-resistant in a reactive ion beam etcher, but soluble in wet chemical solution for liftoff from said substrate.
4. The apparatus of claim 1 , wherein said etch-stop layer comprises a non-oxide material.
5. The apparatus of claim 1 , wherein said etch-stop layer comprises metal.
6. The apparatus of claim 1 , wherein said etch-stop layer comprises nitride material.
7. The apparatus of claim 6 , wherein said nitride material comprises boron nitride.
8. The apparatus of claim 1 , wherein said etch-stop layer comprises chrome.
9. The apparatus of claim 1 , wherein said dielectric oxide layer comprises a predetermined thickness that has been optimized to operate at a desired diffraction efficiency when etched into a grating profile.
10. The apparatus of claim 1 , wherein said dielectric oxide layer comprises material selected from the group consisting of Ta 2 O 5 , ZrO 2 , HfO 2 , SnO 2 , InO 2 , ZnO, Al 2 O 3 (aluminum oxide) Y 2 O 3 (yttrium oxide) and Sc 2 O 3 (scandium oxide).
11. The apparatus of claim 1 , wherein said dielectric oxide layer comprises an amorphous dielectric oxide.
12. The apparatus of claim 1 , wherein the height and sidewall angle of said tapered sidewalls are optimized to obtain efficiency of a desired bandwidth.
13. The apparatus of claim 1 , further comprising an adhesion layer between and in direct contact with said dielectric oxide layer and said metallic overcoat.
14. The apparatus of claim 1 , wherein said adhesion layer comprises chrome.
15. The apparatus of claim 1 , wherein said metallic overcoat comprises metal selected from the group consisting of gold, silver and aluminum.
16. The apparatus of claim 1 , wherein said sidewalls comprise a height that is defined by the thickness of said dielectric oxide layer and the properties of said etch-stop layer.
17. A method for preparing the apparatus according to claim 1 , comprising:
providing the substrate;
depositing the etch-stop layer above said substrate;
depositing the dielectric oxide layer onto said etch-stop layer;
depositing an absorbing layer onto said dielectric oxide layer;
depositing a photoresist layer onto said absorbing layer; patterning said photoresist layer to form a mask;
etching unmasked portions of said dielectric oxide layer to form the grating pattern including the grating lines, wherein the sidewalls of said grating lines taper together toward an upper surface of said dielectric oxide layer, thereby forming the tapered sidewalls;
removing said absorbing layer and said photoresist layer;
and depositing a conformal overcoat onto said etch-stop layer and said dielectric oxide layer to form the metallic overcoat.
18. An apparatus, comprising: a substrate; an etch-stop layer fixedly attached to said substrate; a dielectric oxide layer fixedly attached to said etch-stop layer, wherein said dielectric oxide layer comprises a grating pattern including grating lines, wherein sidewalls of said grating lines taper together toward an upper surface of said dielectric oxide layer, and wherein said tapered sidewalls have a non-zero curvature; and a metallic overcoat fixedly attached to said etch-stop layer and said dielectric oxide layer, wherein the metallic overcoat fills spaces between adjacent grating lines and forms grating ridges above the grating lines, and wherein the apparatus does not include a photoresist.
19. The apparatus of claim 18 , wherein said substrate is polished.
20. The apparatus of claim 18 , wherein said etch-stop layer is etch-resistant in a reactive ion beam etcher, but soluble in wet chemical solution for liftoff from said substrate.
21. The apparatus of claim 18 , wherein said etch-stop layer comprises a material selected from the group consisting of non-oxide material, metal, a nitride material and chrome.
22. The apparatus of claim 21 , wherein said material comprises boron nitride.
23. The apparatus of claim 18 , wherein said dielectric oxide layer comprises a predetermined thickness that has been optimized to operate at a desired diffraction efficiency when etched into a grating profile.
24. The apparatus of claim 18 , wherein said dielectric oxide layer comprises material selected from the group consisting of Ta 2 O 5 , ZrO 2 , HfO 2 , SnO 2 , InO 2 , ZnO, Al 2 O 3 (aluminum oxide) Y 2 O 3 (yttrium oxide) and Sc 2 O 3 (scandium oxide).
25. The apparatus of claim 18 , wherein said dielectric oxide layer comprises an amorphous dielectric oxide.
26. The apparatus of claim 18 , further comprising an adhesion layer between and in direct contact with said dielectric oxide layer and said metallic overcoat.
27. The apparatus of claim 26 , wherein said adhesion layer comprises chrome.
28. The apparatus of claim 18 , wherein said metallic overcoat comprises a metal selected from the group consisting of gold, silver and aluminum.