Field-effect transistor sensor
View Patent ↗Described herein is a field effect transistor sensor including: a substrate, a source electrode, a drain electrode, a gate electrode functionalized with a layer of biological recognition elements, a source-drain channel and a semiconductor layer. The layer of biological recognition elements of the gate electrode is patterned into a plurality of uncoupled domains.
1. A field effect transistor sensor including:
a substrate;
a source electrode;
a drain electrode;
a gate electrode functionalized with a layer of biological recognition elements;
a source-drain channel;
a semiconductor layer; and
the layer of biological recognition elements patterned into a plurality of uncoupled domains, such that a surface of the gate electrode is divided into areas of said biological recognition elements;
wherein each domain of said plurality of domains are chemically decoupled from each other domain of said plurality of domains, whereby a chemical change in a first domain of said plurality of domains due to a ligand recognition event is confined within said first domain;
wherein the plurality of domains are arranged according to a matrix; and
wherein each domain of said plurality of domains has a surface extension ranging from 10 −7 -10 −4 cm 2 to 10 −5 -10 −1 cm 2 .
2. The field effect transistor sensor of claim 1 , wherein the semiconductor layer is covered with an ionic-conducting material.
3. The field effect transistor sensor of claim 2 , wherein the ionic-conducting material is an ionic-conducting-electron-insulating material.
4. The field effect transistor sensor of claim 3 , wherein the ionic-conducting-electron-insulating material includes one of the following:
an ionic-conducting-electron-insulating liquid;
an ionic-conducting-electron-insulating gel;
an ionic-conducting-electron-insulating solid; and
HPLC grade water.
5. The field effect transistor sensor of claim 2 , wherein the ionic-conducting material includes one of the following:
an ionic liquid; and
an ionic conducting polyelectrolyte polymer.
6. The field effect transistor sensor according to claim 2 , wherein the ionic-conducting material is hydrophobic.
7. The field effect transistor sensor according to claim 2 , wherein the ionic-conducting material is hydrophilic.
8. The field effect transistor sensor according to claim 1 , wherein the layer of biological recognition elements is a self assembled monolayer (SAM) of biological recognition elements.
9. The field effect transistor sensor according to claim 8 , wherein the self assembled monolayer (SAM) of biological recognition elements is further functionalized with Bovine Serum Albumin (BSA).
10. The field effect transistor sensor according to claim 1 , further including a first well enclosing said gate electrode and said layer of biological recognition elements.
11. The field effect transistor sensor according to claim 10 , further including a second well enclosing each first well, said source-drain channel and said semiconductor layer.