Laser cutting of metal-ceramic substrates
The present application relates to a method of laser ablation of a metal-ceramic substrate, in which a laser is used under process conditions in which the formation of solid metal particles on the metal-ceramic substrate, which can separate from metal particles released by laser ablation near the ablation edge, is essentially avoided. Further the present application relates to a ceramic-metal substrate comprising a ceramic substrate and a metallization on at least one side of the ceramic substrate, wherein the ceramic substrate and the metallization have flush cutting edge.
1. A method for ablation of a metal-ceramic substrate, comprising:
ablating the metal-ceramic substrate with a laser;
wherein the laser is used under process conditions such that less than 50% of the surface area near the ablation edge of the metal-ceramic substrate is covered with metal particles, wherein the area near the ablation edge has a width, calculated from the edge of the recess, of at most 200 μm;
wherein the laser is used with a relationship between the laser power (W) and the effective maximal processing speed of the laser (m/sec) which corresponds to the following formula (1):
y≤ 4.7 ln x− 15 (1)
wherein
x=laser power in W;
y=effective maximal laser processing speed in m/sec; and
wherein the laser power x is between 40 W and 200 W.
2. The method according to claim 1 , wherein the laser is used with a relationship between the laser power (W) and the effective maximal processing speed of the laser (m/sec), which corresponds to the following formula (2):
y≤ 5.0 ln x− 18 (2)
wherein
x=laser power in W; and
y=effective maximal laser processing speed in m/sec.
3. The method according to claim 1 , wherein the effective processing speed of the laser is at least 0.50 m/sec.
4. The method according to claim 1 , wherein the metal is a copper layer or copper foil, which is applied onto a ceramic substrate.
5. The method according to claim 1 , wherein the metal-ceramic substrate is a DCB substrate.
6. The method according to claim 1 , wherein the laser is a p-sec laser having a pulse duration of 0.10 to 100.00 ps.
7. The method according to claim 6 , wherein the p-sec laser has a pulse energy of 10.00 to 500.00 μJ.
8. The method according to claim 6 , wherein the p-sec laser is an IR-P-sec laser.