Display panel, manufacturing method thereof, and display device

1. A display panel, comprising a substrate, wherein a pixel definition layer is disposed on the substrate to define a plurality of sub-pixels arranged in an array, and in the plurality of sub-pixels, a part is face-up sub-pixels, and the rest is flip sub-pixels;

wherein in the face-up sub-pixels, a first electrode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer, and a second electrode are disposed on the substrate in sequence, and

in the flip sub-pixels, the first electrode, an electron injection layer, an electron transport layer, a light-emitting layer, a hole transport layer, a hole injection layer, and the second electrode are disposed on the substrate in sequence.

2. The display panel according to claim 1 , wherein in the face-up sub-pixels, the light-emitting layer is made of an organic luminescent material, and in the flip sub-pixels, the light-emitting layer is made of a quantum dot luminescent material.

3. The display panel according to claim 1 , wherein in the face-up sub-pixels, the first electrode is an anode and the second electrode is a cathode, and in the flip sub-pixels, the first electrode is a cathode, and the second electrode is an anode.

4. The display panel according to claim 1 , wherein the plurality of sub-pixels are divided into a plurality of pixels, any one of the pixels comprises at least three sub-pixels, and in the at least three sub-pixels, a part is the face-up sub-pixels and the rest is the flip sub-pixels.

5. The display panel according to claim 4 , wherein any one of the pixels comprises a red sub-pixel, a blue sub-pixel, and a green sub-pixel.

6. The display panel according to claim 5 , wherein any one of the red sub-pixel, the blue sub-pixel, and the green sub-pixel is a face-up sub-pixel, and the other two are flip sub-pixels; or any two of the red sub-pixel, the blue sub-pixel, and the green sub-pixel are face-up sub-pixels, and the other one is a flip sub-pixel.

7. The display panel according to claim 1 , comprises an optical coupling output layer disposed on the second electrode.

8. The display panel according to claim 7 , wherein a thickness of the optical coupling output layer ranges from 50 nm to 100 nm.

9. The display panel according to claim 1 , wherein the first electrode is made of indium tin oxide.

10. A display device, comprising the display panel according to claim 1 .

11. A manufacturing method of a display panel, comprising:

S 01 : providing a substrate and forming a patterned first electrode on the substrate;

S 02 : forming a patterned pixel definition layer on the first electrode and exposing the patterned first electrode to form a plurality of sub-pixel regions;

S 03 : in a part of sub-pixel regions, disposing an electron injection layer, an electron transport layer, a light-emitting layer, a hole transport layer, and a hole injection layer on the first electrode in sequence;

S 04 : in the rest of sub-pixel regions, disposing a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer on the first electrode in sequence;

S 05 : forming a second electrode in the plurality of sub-pixel regions together.

12. The manufacturing method of the display panel according to claim 11 , wherein the hole injection layers, the hole transport layers, the light-emitting layers, the electron transport layers, and the electron injection layers are formed by inkjet printing.

13. The manufacturing method of the display panel according to claim 11 , wherein the second electrode is formed by vacuum vapor deposition.

14. The manufacturing method of the display panel according to claim 11 , wherein an optical coupling output layer is formed on the second electrode by vacuum vapor deposition.

15. The manufacturing method of the display panel according to claim 11 , wherein in the step S 03 , the light-emitting layer is made of a quantum dot luminescent material, and in the step S 04 , the light-emitting layer is made of an organic luminescent material.