Solid-state imaging device and electronic device
The present disclosure relates to a solid-state imaging device and an electronic device that can be provided with phase difference pixels with a lower degree of difficulty in manufacturing. Provided is a solid-state imaging device including a pixel array unit in which a plurality of pixels is two-dimensionally arrayed, in which the pixel array unit has an array pattern in which a plurality of pixel groups each including neighboring pixels of an identical color is regularly arrayed, and among the plurality of pixel groups arrayed in the array pattern, pixels configuring a light-shielded pixel group are shielded in an identical direction side from light, the light-shielded pixel group being a pixel group including pixels each being shielded in a part of a light incident side from the light. The present technology can be applied to, for example, a CMOS image sensor including pixels for phase difference detection.
1. A solid-state imaging device comprising:
a pixel array unit in which a plurality of pixels is two-dimensionally arrayed, the plurality of pixels including a plurality of color filters, wherein
the pixel array unit has an array pattern in which a plurality of pixel groups each including neighboring pixels of an identical color is regularly arrayed,
among the plurality of pixel groups arrayed in the array pattern, pixels configuring a first light-shielded pixel group are shielded by a first light shielding portion in an identical direction side from light, the first light-shielded pixel group being a pixel group including pixels each being shielded in a part of a light incident side from the light and from the light at borders with adjacent pixels, and
among the plurality of pixel groups arrayed in the array pattern, pixels configuring a second light-shielded pixel group are shielded by a second light shielding portion, the second light-shielded pixel group being a pixel group including pixels each being shielded from the light only at the borders with the adjacent pixels,
wherein the pixels configuring the first light-shielded pixel group are a positive integer that is less than all of the plurality of pixels.
2. The solid-state imaging device according to claim 1 , wherein
one photoelectric conversion element is formed for one on-chip lens in the pixel.
3. The solid-state imaging device according to claim 2 , wherein
the pixel groups each include four pixels of 2×2, and
the four pixels configuring the light-shielded pixel group are shielded in the identical direction side from the light.
4. The solid-state imaging device according to claim 3 , wherein
the pixel groups are each configured as shared pixels that share a pixel circuit with neighboring pixels of the identical color, and each share a floating diffusion region.
5. The solid-state imaging device according to claim 3 , wherein
the light-shielded pixel group includes, in a case where the light-shielded pixel group is viewed from the light incident side, a first light-shielded pixel group including pixels each being shielded in a left region from the light or a second light-shielded pixel group including pixels each being shielded in a right region from the light, and
the first light-shielded pixel group and the second light-shielded pixel group are combined and arrayed in the array pattern.
6. The solid-state imaging device according to claim 5 , wherein
in the pixel array unit,
the plurality of pixels is arrayed in a matrix,
a plurality of the first light-shielded pixel groups is regularly arrayed at a predetermined pixel interval in a row direction, and
a plurality of the second light-shielded pixel groups is regularly arrayed at a predetermined pixel interval in the row direction.
7. The solid-state imaging device according to claim 5 , wherein
in the pixel array unit,
the plurality of pixels is arrayed in a matrix, and
the first light-shielded pixel group and the second light-shielded pixel group are regularly arrayed at a predetermined pixel interval in a column direction.
8. The solid-state imaging device according to claim 5 , wherein
the first light-shielded pixel group and the second light-shielded pixel group are arranged corresponding to arrangement positions of the pixel groups each including the pixels of the identical color.
9. The solid-state imaging device according to claim 8 , wherein
the plurality of color filters includes a red (R) pixel, a green (G) pixel, and a blue (B) pixel corresponding to red (R), green (G), and blue (B) color filters, and
the first light-shielded pixel group and the second light-shielded pixel group are each configured as a white (W) pixel.
10. The solid-state imaging device according to claim 1 , wherein
the array pattern is a Bayer array.
11. The solid-state imaging device according to claim 5 , wherein
the pixels configuring the first light-shielded pixel group and the second light-shielded pixel group are configured as pixels for phase difference detection.
12. An electronic device comprising:
an imaging unit that includes a solid-state imaging device including
a pixel array unit in which a plurality of pixels is two-dimensionally arrayed, the plurality of pixels including a plurality of color filters, wherein
the pixel array unit has an array pattern in which a plurality of pixel groups each including neighboring pixels of an identical color is regularly arrayed,
among the plurality of pixel groups arrayed in the array pattern, pixels configuring a first light-shielded pixel group are shielded by a first light shielding portion in an identical direction side from light, the first light-shielded pixel group being a pixel group including pixels each being shielded in a part of a light incident side from the light and from the light at borders with adjacent pixels, and
among the plurality of pixel groups arrayed in the array pattern, pixels configuring a second light-shielded pixel group are shielded by a second light shielding portion, the second light-shielded pixel group being a pixel group including pixels each being shielded from the light only at the borders with the adjacent pixels; and
a control unit that performs autofocus control on a basis of a phase difference detection result obtained from output of the light-shielded pixel group,
wherein the pixels configuring the first light-shielded pixel group are a positive integer that is less than all of the plurality of pixels.
13. The electronic device according to claim 12 , wherein
one photoelectric conversion element is formed for one on-chip lens in the pixel.
14. The electronic device according to claim 13 , wherein
the pixel groups each include four pixels of 2×2, and
the four pixels configuring the light-shielded pixel group are shielded in the identical direction side from the light.
15. The electronic device according to claim 14 , wherein
the pixel groups are each configured as shared pixels that share a pixel circuit with neighboring pixels of the identical color, and each share a floating diffusion region.
16. The electronic device according to claim 14 , wherein
the light-shielded pixel group includes, in a case where the light-shielded pixel group is viewed from the light incident side, a first light-shielded pixel group including pixels each being shielded in a left region from the light or a second light-shielded pixel group including pixels each being shielded in a right region from the light, and
the first light-shielded pixel group and the second light-shielded pixel group are combined and arrayed in the array pattern.
17. The electronic device according to claim 16 , wherein
in the pixel array unit,
the plurality of pixels is arrayed in a matrix,
a plurality of the first light-shielded pixel groups is regularly arrayed at a predetermined pixel interval in a row direction, and
a plurality of the second light-shielded pixel groups is regularly arrayed at a predetermined pixel interval in the row direction.
18. The electronic device according to claim 16 , wherein
in the pixel array unit,
the plurality of pixels is arrayed in a matrix, and
the first light-shielded pixel group and the second light-shielded pixel group are regularly arrayed at a predetermined pixel interval in a column direction.
19. The electronic device according to claim 16 , wherein
the first light-shielded pixel group and the second light-shielded pixel group are arranged corresponding to arrangement positions of the pixel groups each including the pixels of the identical color.
20. The electronic device according to claim 19 , wherein
the plurality of color filters includes a red (R) pixel, a green (G) pixel, and a blue (B) pixel corresponding to red (R), green (G), and blue (B) color filters, and
the first light-shielded pixel group and the second light-shielded pixel group are each configured as a white (W) pixel.
21. The solid-state imaging device according to claim 1 , wherein
in a cross-section view, the plurality of color filters and the light shield portion are disposed in a same layer.
22. The solid-state imaging device according to claim 21 , wherein
the light shield portion is only disposed in the same layer as the plurality of color filters.