Semiconductor device and driving method of semiconductor device
View Patent ↗A semiconductor device with a large storage capacity per unit area can be provided. A memory cell including a first transistor, a second transistor, a third transistor, a fourth transistor, a first capacitor, and a second capacitor includes a stack including a first conductor, a first insulator over the first conductor, a second conductor over the first insulator, a second insulator over the second conductor, and a third conductor over the second insulator; a first oxide arranged in a ring-like shape on a side surface of an opening portion of the second conductor; a fourth conductor arranged in a ring-like shape in contact with an inner wall of the first oxide; a cylindrical third insulator arranged to penetrate the stack, the first oxide, and the fourth conductor; and a second oxide arranged in contact with an inner wall of the third insulator.
1. A memory cell comprising a first transistor, a second transistor, a third transistor, a fourth transistor, a first capacitor, and a second capacitor, comprising:
a stack including a first conductor, a first insulator over the first conductor, a second conductor over the first insulator, a second insulator over the second conductor, and a third conductor over the second insulator;
a first oxide arranged in a ring-like shape on a side surface of an opening portion of the second conductor;
a fourth conductor arranged in a ring-like shape in contact with an inner wall of the first oxide;
a cylindrical third insulator arranged to penetrate the stack, the first oxide, and the fourth conductor; and
a second oxide arranged in contact with an inner wall of the third insulator,
wherein the first transistor includes part of the first conductor, part of the second conductor, part of the third conductor, part of the fourth conductor, part of the first oxide, part of the first insulator, and part of the second insulator,
wherein the second transistor includes part of the first conductor, part of the third insulator, and part of the second oxide,
wherein the third transistor includes part of the third conductor, part of the third insulator, and part of the second oxide,
wherein the fourth transistor includes part of the fourth conductor, part of the third insulator, and part of the second oxide,
wherein the first capacitor includes part of the first conductor, part of the first insulator, and part of the fourth conductor, and
wherein the second capacitor includes part of the third conductor, part of the second insulator, and part of the fourth conductor.
2. The semiconductor device comprising the memory cell of claim 1 , further comprising a fourth insulator over the stack,
wherein m v stacks and m v fourth insulators are arranged in a direction perpendicular to one surface of a base, and
wherein m v is an integer greater than or equal to 2.
3. The semiconductor device according to claim 2 , further comprising the base, a fifth insulator, and m h memory cells in a direction horizontal to the one surface of the base,
wherein the fifth insulator is in contact with a side surface of the first conductor, a side surface of the second conductor, and a side surface of the third conductor, and
wherein m h is an integer greater than or equal to 2.
4. The semiconductor device according to claim 1 , further comprising a fifth conductor, a sixth insulator over the fifth conductor, the stack over the sixth insulator, a seventh insulator over the stack, and a sixth conductor over the seventh insulator,
wherein the fifth conductor, the third insulator, and the second oxide function as a fifth transistor, and
wherein the sixth conductor, the third insulator, and the second oxide function as a sixth transistor.
5. The semiconductor device according to claim 1 ,
wherein the first oxide and the second oxide contain In, an element M, and Zn, and
wherein M is Al, Ga, Y, or Sn.