Switch element, switching method and semiconductor device

1. A switch element, including:

a resistance change element including a metal deposition type resistance change film, a first electrode that is connected to one surface of the resistance change film and supplies a metal ion to the resistance change film, and a second electrode that is connected to another surface of the resistance change film;

a first transistor of which a drain or a source is connected to the first electrode; and

a second transistor of which a source or a drain is connected to the second electrode,

wherein, when switching the resistance change element from a low-resistive state to a high-resistive state by the first transistor and the second transistor making a potential of the second electrode higher than a potential of the first electrode,

the switch element switches by having

a first mode in which a gate voltage of the first transistor or the second transistor is defined as a first gate voltage, and a potential difference between the first electrode and the second electrode is defined as a first potential difference, and

a second mode in which a gate voltage of the first transistor or the second transistor is defined as a second gate voltage, and a potential difference between the first electrode and the second electrode is defined as a second potential difference, and

the first gate voltage is set larger than the second gate voltage, and the first potential difference is set smaller than the second potential difference.

2. The switch element according to claim 1 ,

wherein the first and second potential differences are based on a difference between a potential of a source or a drain of the first transistor and a potential of a drain or a source of the second transistor.

3. The switch element according to claim 1 ,

wherein the switch starts in the first mode.

4. The switch element according to claim 1 ,

wherein the first mode and the second mode are alternately repeated.

5. The switch element according to claim 4 ,

wherein, each time the first mode and the second mode are alternately repeated, the first gate voltage and the second gate voltage, or the first potential difference and the second potential difference are increased.

6. The switch element according to claim 1 ,

wherein a resistance value of the resistance change element is monitored between the first mode and the second mode.

7. A semiconductor device, including:

a semiconductor integrated circuit having the switch element according to claim 1 .

8. The semiconductor device according to claim 7 ,

wherein the semiconductor integrated circuit includes an interconnect layer, and the resistance change element of the switch element is provided in the interconnect layer.

9. A switching method of a switch element including:

a resistance change element having a metal deposition type resistance change film, a first electrode that is connected to one surface of the resistance change film and supplies a metal ion to the resistance change film, and a second electrode that is connected to another surface of the resistance change film;

a first transistor of which a drain or a source is connected to the first electrode; and

a second transistor of which a source or a drain is connected to the second electrode,

the switching method including:

switching, when switching the resistance change element from a low-resistive state to a high-resistive state by making a potential of the second electrode higher than a potential of the first electrode, by having

a first mode in which a gate voltage of the first transistor or the second transistor is defined as a first gate voltage, and a potential difference between the first electrode and the second electrode is defined as a first potential difference, and

a second mode in which a gate voltage of the first transistor or the second transistor is defined as a second gate voltage, and a potential difference between the first electrode and the second electrode is defined as a second potential difference; and

setting the first gate voltage larger than the second gate voltage and setting the first potential difference smaller than the second potential difference.

10. The switching method according to claim 9 ,

wherein the first potential difference and the second potential difference are based on a difference between a potential of a source or a drain of the first transistor and a potential of a drain or a source of the second transistor.

11. The switching method according to claim 9 ,

wherein the switch starts in the first mode.

12. The switching method according to claim 9 ,

wherein the first mode and the second mode are alternately repeated.

13. The switching method according to claim 12 ,

wherein, each time the first mode and the second mode are alternately repeated, the first gate voltage and the second gate voltage, or the first potential difference and the second potential difference are increased.

14. The switching method according to claim 9 ,

wherein a resistance value of the resistance change element is monitored between the first mode and the second mode.

15. The switch element according to claim 2 ,

wherein the switch starts in the first mode.

16. The switch element according to claim 2 ,

wherein the first mode and the second mode are alternately repeated.

17. The switch element according to claim 3 ,

wherein the first mode and the second mode are alternately repeated.

18. The switch element according to claim 2 ,

wherein a resistance value of the resistance change element is monitored between the first mode and the second mode.

19. The switch element according to claim 3 ,

wherein a resistance value of the resistance change element is monitored between the first mode and the second mode.

20. The switch element according to claim 4

wherein a resistance value of the resistance change element is monitored between the first mode and the second mode.