Spin-orbit-torque magnetization rotational element and magnetic memory
A spin-orbit-torque magnetization rotational element includes: a ferromagnetic metal layer, a magnetization direction of the ferromagnetic metal layer being configured to change; a spin-orbit torque wiring which extends in the first direction intersecting a lamination direction of the ferromagnetic metal layer and is joined to the ferromagnetic metal layer; and two via wires, each of which extends in a direction intersecting the spin-orbit torque wiring from a surface of the spin-orbit torque wiring opposite to a side with the ferromagnetic metal layer and is connected to a semiconductor circuit, wherein a via-to-via distance between the two via wires in the first direction is shorter than a width of the ferromagnetic metal layer in the first direction.
1. A spin-orbit-torque magnetization rotational element, comprising:
a ferromagnetic metal layer, a magnetization direction of the ferromagnetic metal layer being configured to change;
a spin-orbit torque wiring which extends in a first direction intersecting a lamination direction of the ferromagnetic metal layer and is joined to the ferromagnetic metal layer; and
two via wires, each of the two via wires (1) extends in a direction intersecting the first direction, (2) is located at a first surface of the spin-orbit torque wiring which is opposite to a second surface of the spin-orbit torque wiring at which the ferromagnetic metal layer is located, and (3) is connected to a semiconductor circuit,
wherein
a via-to-via distance between the two via wires in the first direction is shorter than a width of the ferromagnetic metal layer in the first direction,
the spin-orbit torque wiring has a laminated structure in a lamination direction of the spin-orbit torque wiring, and
a resistance value of a first layer of the spin-orbit torque wiring on a ferromagnetic metal layer side is lower than a resistance value of a second layer of the spin-orbit torque wiring provided on a via wires side.
2. A spin-orbit-torque magnetization rotational element, comprising:
a ferromagnetic metal layer, a magnetization direction of the ferromagnetic metal layer being configured to change;
a spin-orbit torque wiring which extends in a first direction intersecting a lamination direction of the ferromagnetic metal layer and is joined to the ferromagnetic metal layer;
two via wires, each of the two via wires (1) extends in a direction intersecting the first direction, (2) is located at a first surface of the spin-orbit torque wiring which is opposite to a second surface of the spin-orbit torque wiring at which the ferromagnetic metal layer is located, and (3) is connected to a semiconductor circuit; and
a planarizing layer between the via wires and the spin-orbit torque wiring,
wherein a via-to-via distance between the two via wires in the first direction is shorter than a width of the ferromagnetic metal layer in the first direction.
3. The spin-orbit-torque magnetization rotational element according to claim 2 , wherein the planarizing layer is made of a nitride containing Ti or Ta.
4. A spin-orbit-torque magnetization rotational element, comprising:
a ferromagnetic metal layer, a magnetization direction of the ferromagnetic metal layer being configured to change;
a spin-orbit torque wiring which extends in a first direction intersecting a lamination direction of the ferromagnetic metal layer and is joined to the ferromagnetic metal layer; and
two via wires, each of the two via wires (1) extends in a direction intersecting the first direction, (2) is located at a first surface of the spin-orbit torque wiring which is opposite to a second surface of the spin-orbit torque wiring at which the ferromagnetic metal layer is located, and (3) is connected to a semiconductor circuit, wherein
a via-to-via distance between the two via wires in the first direction is shorter than a width of the ferromagnetic metal layer in the first direction, and
in a lamination surface for the ferromagnetic metal layer to be laminated thereon, a Vickers hardness difference between the two via wires and an interlayer insulating part configured to insulate between the two via wires is 3 GPa or less.
5. The spin-orbit-torque magnetization rotational element according to claim 1 , wherein, in a lamination surface for the ferromagnetic metal layer to be laminated thereon, a Vickers hardness difference between the two via wires and an interlayer insulating part configured to insulate between the two via wires is 3 GPa or less.
6. The spin-orbit-torque magnetization rotational element according to claim 2 , wherein, in a lamination surface for the ferromagnetic metal layer to be laminated thereon, a Vickers hardness difference between the two via wires and an interlayer insulating part configured to insulate between the two via wires is 3 GPa or less.
7. The spin-orbit-torque magnetization rotational element according to claim 3 , wherein, in a lamination surface for the ferromagnetic metal layer to be laminated thereon, a Vickers hardness difference between the two via wires and an interlayer insulating part configured to insulate between the two via wires is 3 GPa or less.
8. The spin-orbit-torque magnetization rotational element according to claim 3 , further comprising:
a non-magnetic layer and a magnetization fixed layer, a magnetization direction of the magnetization fixed layer being configured to be fixed to the ferromagnetic metal layer provided on a surface of the ferromagnetic metal layer opposite to a side with the spin-orbit torque wiring.
9. The spin-orbit-torque magnetization rotational element according to claim 4 , further comprising:
a non-magnetic layer and a magnetization fixed layer, a magnetization direction of the magnetization fixed layer being configured to be fixed to the ferromagnetic metal layer provided on a surface of the ferromagnetic metal layer opposite to a side with the spin-orbit torque wiring.
10. A magnetic memory comprising:
a plurality of the spin-orbit-torque magnetization rotational elements according to claim 9 .
11. The spin-orbit-torque magnetization rotational element according to claim 1 , further comprising:
a planarizing layer between the via wires and the spin-orbit torque wiring.
12. The spin-orbit-torque magnetization rotational element according to claim 11 , wherein the planarizing layer is made of a nitride containing Ti or Ta.
13. The spin-orbit-torque magnetization rotational element according to claim 1 , further comprising:
a non-magnetic layer and a magnetization fixed layer, a magnetization direction of the magnetization fixed layer being configured to be fixed to the ferromagnetic metal layer provided on a surface of the ferromagnetic metal layer opposite to a side with the spin-orbit torque wiring.
14. The spin-orbit-torque magnetization rotational element according to claim 13 , wherein an area of the ferromagnetic metal layer when viewed in a plan view from a vertical direction is larger than an area of the magnetization fixed layer when viewed in a plan view from the vertical direction.
15. A magnetic memory comprising:
a plurality of the spin-orbit-torque magnetization rotational elements according to claim 13 .
16. The spin-orbit-torque magnetization rotational element according to claim 2 , further comprising:
a non-magnetic layer and a magnetization fixed layer, a magnetization direction of the magnetization fixed layer being configured to be fixed to the ferromagnetic metal layer provided on a surface of the ferromagnetic metal layer opposite to a side with the spin-orbit torque wiring.
17. A magnetic memory comprising:
a plurality of the spin-orbit-torque magnetization rotational elements according to claim 16 .