Photoresist-removing liquid and photoresist-removing method
The present invention discloses a photoresist-removing solution comprising of an N-containing compound and an organic substance in a mass ratio of 1:(0.5-150). The N-containing compound includes at least one of the followings: tetraalkylammonium hydroxide, ammonia, liquid ammonia, and a mixture of ammonia and water; wherein the tetraalkylammonium hydroxide has the general formula (I): wherein R 1 , R 2 , R 3 , R 4 is an alkyl with 1 to 4 carbons, respectively. The organic substance is an organic substance having at least one electron-withdrawing functional group. The present invention mixes a specific kind of N-containing compound and a specific kind of organic substance in a certain ratio, and preferably adds a certain amount of water, so that the removal liquid in the present application has an extremely excellent photoresist-removing effect.
1. A photoresist-removing method, comprising:
using a removal liquid to remove photoresist, wherein the removal liquid comprises an N-containing compound and an organic substance in a mass ratio of 1:(0.5-150), and the N-containing compound including at least one of the following: a tetraalkylammonium hydroxide, ammonia, liquid ammonia, and a mixture of ammonia and water; wherein the tetraalkylammonium hydroxide has the general formula (I):
wherein R1, R2, R3, R4 is an alkyl with 1 to 4 carbons, respectively; wherein the organic substance is an organic substance with at least one electron-withdrawing functional group;
mixing the removal liquid with a gas to form a gas-liquid mixture; and
spraying the gas-liquid mixture on a surface of the photoresist.
2. The photoresist-removing method of claim 1 , wherein the gas is a mixture of one or more of ammonia, oxygen, nitrogen, air or ozone.
3. The photoresist-removing method of claim 1 , wherein the gas is air or oxygen, and the gas is partially or completely converted into ozone by an ozone generating device before being mixed with the removal liquid.