Three-dimensional flash memory with reduced wire length and manufacturing method therefor
A three-dimensional flash memory is provided, and technique to suppress interference caused by an inter-cell insulation layer in a vertical cell and to form a stable vertical channel layer, a technique to reduce a length of wire than a conventional three-dimensional flash memory for overcoming problems of deterioration of chip characteristics such as operation speed and power consumption and difficulty of wiring technique in the manufacturing process, and a technique to improve horizontal density of channel layers and ONO layers are proposed.
1. A three-dimensional device of a three-dimensional flash memory, the three-dimensional device comprising:
a vertical cell group including
a plurality of stacked horizontal electrode layers; and
a plurality of vertical channel layers formed in holes of the vertical cell group and perpendicular to the plurality of stacked horizontal electrode layers,
wherein the holes maintain constant hole size within the vertical cell group,
the hole size is different compared to a hole size of a bottommost hole of an upper vertical cell group located directly above the three-dimensional device and a topmost hole of a lower vertical cell group located directly below the three-dimensional device.
2. The three-dimensional device of claim 1 , wherein the hole size of the vertical channel layer located above the three-dimensional device is greater than the hole size of the vertical channel layer located below the three-dimensional device.
3. A three-dimensional device of a three-dimensional flash memory, the three-dimensional device comprising:
a stack of vertical cell groups including
a plurality of stacked horizontal electrode layers for each vertical cell group; and
a plurality of vertical channel layers, having different hole sizes, for each vertical cell group and perpendicular to the plurality of stacked horizontal electrode layers,
wherein each of the vertical channel layer maintains a hole size constant within one vertical cell group, and
a hole size of at least one of the vertical cell groups is different compared to a bottommost hole of an upper vertical cell group located directly above the at least one of the vertical cell groups and a topmost hole of a lower vertical cell group located directly below the at least one of the vertical cell groups.
4. A three-dimensional flash memory comprising:
a common source line formed to extend in one direction;
a plurality of electrode layers stacked vertically with respect to the common source line;
at least one intermediate circuit layer in the plurality of electrode layers in an intermediate region of the common source line; and
a lower circuit layer disposed in the lower region of the common source line,
wherein the intermediate region is between an upper region and a lower region of the common source line in a cross-sectional view, and
the at least one intermediate circuit layer and the lower circuit layer correspond to a plurality of blocks grouped with the plurality of electrode layers divided by the at least one intermediate circuit layer, respectively.
5. The three-dimensional flash memory of claim 2 , wherein the lower circuit layer is in charge of at least one block positioned in the lowermost region of a plurality of blocks, and
wherein the at least one intermediate circuit layer is in charge of at least one block positioned above the block positioned in the lowermost region of the plurality of blocks.