Method for producing sealed optical semiconductor device
View Patent ↗A method for producing a sealed optical semiconductor device makes it possible to seal an optical semiconductor element using a sealing film. The method includes: placing a sealing film on an optical semiconductor element substrate on which an optical semiconductor element is placed within a pressure reduction chamber, and the pressure within the chamber is reduced; heating the film where at least the periphery of the film is thermally fused to the surface of the optical semiconductor element placement substrate; and a step in which the reduction of pressure within the chamber is released and the optical semiconductor element placement substrate is sealed by the film. The temperature T 2 of the optical semiconductor element placement substrate when the reduction of pressure within the chamber is released is a temperature at which the film exhibits a tensile strength of 0.02-0.15 MPa and an elongation at break of 150-450%.
1. A method for producing a sealed optical semiconductor device including:
a step of placing a sealing film on an optical semiconductor element mounting substrate on which an optical semiconductor element is mounted, in a pressure reduction chamber, and reducing the pressure within the pressure reduction chamber;
a step of heating the sealing film so as to thermally fuse at least a peripheral portion of the sealing film to a surface of the element mounting substrate; and
a step of releasing the reduced pressure within the pressure reduction chamber so as to seal the optical semiconductor element mounting substrate with the sealing film,
wherein the temperature T 2 of the optical semiconductor element mounting substrate when the reduced pressure within the pressure reduction chamber is released is a temperature at which the sealing film exhibits a tensile strength of 0.02 to 0.15 MPa and an elongation at break of 150 to 450%.
2. The method for producing a sealed optical semiconductor device as claimed in claim 1 , wherein the sealing film is made of a thermosetting silicone resin.
3. The method for producing a sealed optical semiconductor device as claimed in claim 1 , wherein the sealing film contains not more than 90 mass % of a phosphor.
4. The method for producing a sealed optical semiconductor device as claimed in claim 1 , wherein the sealing film has a thickness of not less than 10 μm and not more than 300 μm.
5. The method for producing a sealed optical semiconductor device as claimed in claim 1 , wherein the temperature T 2 is not less than 70° C. and not more than 180° C.
6. The method for producing a sealed optical semiconductor device as claimed in claim 1 , wherein the minimum distance between the optical semiconductor elements on the optical semiconductor element mounting substrate is greater than the thickness of the sealing film.
7. The method for producing a sealed optical semiconductor device as claimed in claim 1 , wherein the aspect ratio (T/L) between the height T of the optical semiconductor device and the distance L between the optical semiconductor devices on the optical semiconductor element mounting substrate is, at maximum, not more than 3.
8. The method for producing a sealed optical semiconductor device as claimed in claim 2 , wherein the sealing film contains not more than 90 mass % of a phosphor.
9. The method for producing a sealed optical semiconductor device as claimed in claim 2 , wherein the sealing film has a thickness of not less than 10 μm and not more than 300 μm.
10. The method for producing a sealed optical semiconductor device as claimed in claim 3 , wherein the sealing film has a thickness of not less than 10 μm and not more than 300 μm.
11. The method for producing a sealed optical semiconductor device as claimed in claim 2 , wherein the temperature T 2 is not less than 70° C. and not more than 180° C.
12. The method for producing a sealed optical semiconductor device as claimed in claim 3 , wherein the temperature T 2 is not less than 70° C. and not more than 180° C.
13. The method for producing a sealed optical semiconductor device as claimed in claim 8 , wherein the temperature T 2 is not less than 70° C. and not more than 180° C.
14. The method for producing a sealed optical semiconductor device as claimed in claim 2 , wherein the minimum distance between the optical semiconductor elements on the optical semiconductor element mounting substrate is greater than the thickness of the sealing film.
15. The method for producing a sealed optical semiconductor device as claimed in claim 3 , wherein the minimum distance between the optical semiconductor elements on the optical semiconductor element mounting substrate is greater than the thickness of the sealing film.
16. The method for producing a sealed optical semiconductor device as claimed in claim 2 , wherein the aspect ratio (T/L) between the height T of the optical semiconductor device and the distance L between the optical semiconductor devices on the optical semiconductor element mounting substrate is, at maximum, not more than 3.
17. The method for producing a sealed optical semiconductor device as claimed in claim 3 , wherein the aspect ratio (T/L) between the height T of the optical semiconductor device and the distance L between the optical semiconductor devices on the optical semiconductor element mounting substrate is, at maximum, not more than 3.