Light emitting device and projector
View Patent ↗A light emitting device is provided including a switching element. The light emitting device includes a light emitting unit having a plurality of nanostructures that can emit lights with injection of currents, and a transistor provided in correspondence with the light emitting unit and controlling amounts of the currents injected in the nanostructures.
1. A light emitting device comprising:
a light emitting unit having a plurality of nanostructures configured to emit light with injection of currents;
a transistor provided in correspondence with the light emitting unit and controlling amounts of the currents injected in the nanostructures;
a base; and
a first semiconductor layer provided on the base, wherein
the nanostructures are columnar portions projecting from the first semiconductor layer,
the nanostructure has:
a second semiconductor;
a third semiconductor layer having a different conductivity type from that of the second semiconductor layer; and
a light emitting layer provided between the second semiconductor layer and the third semiconductor layer, and configured to emit light with injection of a current,
the second semiconductor layer is provided between the base and the light emitting layer,
an insulating layer is provided on a side wall of the light emitting unit,
a metal layer is provided on a surface of the insulating layer, and
the metal layer is coupled to an interconnection electrically coupled to the third semiconductor layer.
2. The light emitting device according to claim 1 , wherein
the transistor has:
a source region and a drain region;
a channel region between the source region and the drain region; and
a gate that controls a current flowing in the channel region, and
the source region and the drain region are provided in the first semiconductor layer.
3. The light emitting device according to claim 2 , wherein
the source region or the drain region is electrically coupled to the second semiconductor layer.
4. The light emitting device according to claim 1 , wherein
the light emitting unit has a light propagation layer provided between the adjacent nanostructures and propagating light generated in the light emitting layer.
5. The light emitting device according to claim 1 , wherein
the first semiconductor layer is a GaN layer, InGaN layer, AlGaN layer, AlGaAs layer, InGaAs layer, InGaAsP layer, InP layer, GaP layer, or AlGaP layer.
6. The light emitting device according to claim 1 , wherein the light emitting units are provided in an array form.
7. A projector comprising the light emitting device according to claim 1 .