Performing read operation prior to two-pass programming of storage system
Data from a first portion of a memory cell of a plurality of memory cells is read. A first programming pass is performed on another memory cell of the plurality of memory cells by providing new data to the another memory cell. A second programming pass is performed on the memory cell by providing additional data to the first portion of the memory cell based on the reading of the first portion of the memory cell. The first programming pass and the second programming pass correspond to a two-pass programming operation associated with the plurality of memory cells.
1. A system comprising:
a memory; and
a processing device, operatively coupled with the memory, to:
read data from a first portion of a memory cell of a plurality of memory cells;
perform a first programming pass on another memory cell of the plurality of memory cells by providing new data to the another memory cell; and
perform a second programming pass on the memory cell by providing additional data to the first portion of the memory cell based on the reading of the data from the first portion of the memory cell, wherein the first programming pass and the second programming pass correspond to a two-pass programming operation associated with the plurality of memory cells.
2. The system of claim 1 , wherein to read the data from the first portion of the memory cell, the processing device is further to:
determine that the data stored at the first portion of the memory cell comprises an error; and
perform an error correction operation on the data stored at the memory cell of the plurality of memory cells to generate the additional data.
3. The system of claim 1 , wherein to perform the first programming pass on the another memory by providing new data to the another memory cell, the processing device is further to:
provide the new data to a plurality of pages of the another memory cell.
4. The system of claim 1 , wherein to perform the second programming pass on the memory cell, the processing device is further to:
provide data to a particular page of the memory cell.
5. The system of claim 1 , wherein the processing device is further to:
receive subsequent data to be stored at the plurality of memory cells, wherein reading the data from the first portion of the memory cell of the plurality of memory cells is in response to receiving the subsequent data to be stored at the plurality of memory cells.
6. The system of claim 1 , wherein the memory cell and the another memory cell of the plurality of memory cells are on a same word line.
7. The system of claim 1 , wherein to read the data from the first portion of the memory cell, the processing device is further to:
determine that the data read from the first portion of the memory cell does not comprise an error; and
in response to determining that the data read from the first portion of the memory cell does not comprise an error, provide the additional data to refresh the data stored at the first portion of the memory cell of the plurality of memory cells.
8. A method comprising:
reading data from a first portion of a memory cell of a plurality of memory cells;
performing, by a processing device, a first programming pass on another memory cell of the plurality of memory cells by providing new data to the another memory cell; and
performing a second programming pass on the memory cell by providing additional data to the first portion of the memory cell based on the reading of the data from the first portion of the memory cell, wherein the first programming pass and the second programming pass correspond to a two-pass programming operation associated with the plurality of memory cells.
9. The method of claim 8 , wherein reading the data from the first portion of the memory cell comprises:
determining that the data stored at the first portion of the memory cell comprises an error; and
performing an error correction operation on the data stored at the memory cell of the plurality of memory cells to generate the additional data.
10. The method of claim 8 , wherein performing the first programming pass on the another memory cell by providing the new data to the another memory cell comprises:
providing the new data to a plurality of pages of the another memory cell.
11. The method of claim 8 , wherein performing the second programming pass on the memory cell comprises:
providing data to a particular page of the memory cell.
12. The method of claim 8 , further comprising:
receiving subsequent data to be stored at the plurality of memory cells, wherein reading the data from the first portion of the memory cell of the plurality of memory cells is in response to receiving the data to be stored at the plurality of memory cells.
13. The method of claim 8 , wherein the memory cell and the another memory cell of the plurality of memory cells are on a same word line.
14. The method of claim 8 , wherein reading the data from the first portion of the memory cell comprises:
determining that the data read from the first portion of the memory cell does not comprise an error; and
in response to determining that the data read from the first portion of the memory cell does not comprise an error, providing the additional data to refresh the data stored at the first portion of the memory cell of the plurality of memory cells.
15. A non-transitory computer-readable storage medium comprising instructions that, when executed by a processing device, cause the processing device to:
read data from a first portion of a memory cell of a plurality of memory cells;
perform a first programming pass on another memory cell by providing new data to the another memory cell; and
perform a second programming pass on the memory cell by providing additional data to the first portion of the memory cell based on the reading of the data from the first portion of the memory cell wherein the first programming pass and the second programming pass correspond to a two-pass programming operation associated with the plurality of memory cells.
16. The non-transitory computer-readable storage medium of claim 15 , wherein to read the data from the first portion of the memory cell, the processing device is further to:
determine that the data stored at the first portion of the memory cell comprises an error; and
perform an error correction operation on the data stored at the memory cell of the plurality of memory cells to generate the additional data.
17. The non-transitory computer-readable storage medium of claim 15 , wherein to perform the first programming pass on the another memory cell by providing data to the another memory cell, the processing device is further to:
provide the new data to a plurality of pages of the another memory cell.
18. The non-transitory computer-readable storage medium of claim 15 , wherein to perform the second programming pass on the memory cell, the processing device is further to:
provide data to a particular page of the memory cell.
19. The non-transitory computer-readable storage medium of claim 15 , wherein the processing device is further to:
receive subsequent data to be stored at the plurality of memory cells, wherein reading the data from the first portion of the memory cell of the plurality of memory cells is in response to receiving the data to be stored at the plurality of memory cells.
20. The non-transitory computer-readable storage medium of claim 15 , wherein to read the data from the first portion of the memory cell, the processing device is further to:
determine that the data read from the first portion of the memory cell does not comprise an error; and
in response to determining that the data read from the first portion of the memory cell does not comprise an error, provide the additional data to refresh the data stored at the first portion of the memory cell of the plurality of memory cells.