SILICON CARBIDE EPITAXIAL SUBSTRATE
A silicon carbide epitaxial substrate includes: a silicon carbide single-crystal substrate having a polytype of 4H and having a principal surface inclined at an angle θ from a {0001} plane in a <11-20> direction; and a silicon carbide epitaxial layer provided on the principal surface and having a basal plane dislocation, wherein even when the basal plane dislocation is irradiated with an ultraviolet light having a power of 270 mW and a wavelength of 313 nm for 10 seconds, the basal plane dislocation does not move.
1 . A silicon carbide epitaxial substrate comprising:
a silicon carbide single-crystal substrate having a polytype of 4H and having a principal surface inclined at an angle θ from a {0001} plane in a <11-20> direction; and
a silicon carbide epitaxial layer provided on the principal surface and having a basal plane dislocation,
wherein even when the basal plane dislocation is irradiated with an ultraviolet light having a power of 270 mW and a wavelength of 313 nm for 10 seconds, the basal plane dislocation does not move.
2 . The silicon carbide epitaxial substrate according to claim 1 , wherein a diameter of the silicon carbide single-crystal substrate is greater than or equal to 150 mm.
3 . The silicon carbide epitaxial substrate according to claim 1 , wherein the angle θ is greater than 0° and less than or equal to 6°.