Method for producing sealed optical semiconductor device
View Patent ↗A method for producing a sealed optical semiconductor device includes: placing inner and outermost layer sealing films on a substrate on which an optical semiconductor element is mounted within a pressure reduction chamber, and reducing the pressure; a step in which the outermost film is heated, and at least the periphery of the outermost film is thermally fused to the surface of the substrate; and a step in which the reduction of pressure is released, and the substrate is sealed by the outermost film and the inner film. The temperature T 2 of the substrate when the reduction of pressure is released is a temperature at which the outermost film exhibits a tensile strength of 0.02-0.15 MPa and an elongation at break of 200-450%. The inner film exhibits a loss tangent (tan δ) of 1.6 or more at the temperature T 2 .
1. A method for producing a sealed optical semiconductor device, comprising:
a step in which at least two types of sealing films including an inner layer sealing film and an outermost layer sealing film are placed in this order on an optical semiconductor element mounting substrate on which an optical semiconductor element is mounted within a pressure reduction chamber and the pressure in the pressure reduction chamber is reduced;
a step in which the outermost layer sealing film is heated and at least the periphery of the outermost layer sealing film is thermally fused to the surface of the optical semiconductor element mounting substrate; and
a step in which the reduction of pressure within the pressure reduction chamber is released and the optical semiconductor element mounting substrate is sealed by the outermost layer sealing film and the inner layer sealing film, wherein the temperature T 2 of the optical semiconductor element mounting substrate when the reduction of pressure within the pressure reduction chamber is released is a temperature at which the outermost layer sealing film exhibits a tensile strength of 0.02-0.15 MPa and an elongation at break of 200-450%, and the inner layer sealing film exhibits a loss tangent (tan δ) of 1.6 or more at the temperature T 2 .
2. The method for producing a sealed optical semiconductor device as claimed in claim 1 , wherein the inner layer sealing film and the outermost sealing film are made of a thermosetting silicone resin.
3. The method for producing a sealed optical semiconductor device as claimed in claim 2 , wherein at least one of the inner layer sealing film and the outermost layer sealing film comprises particles, and the particles are selected from phosphors and fillers.
4. The method for producing a sealed optical semiconductor device as claimed in claim 2 , wherein each of the inner layer sealing film and the outermost sealing film has a thickness of not less than 10 μm and not more than 300 μm.
5. The method for producing a sealed optical semiconductor device as claimed in claim 2 , wherein the temperature T 2 is not less than 70° C. and not more than 180° C.
6. The method for producing a sealed optical semiconductor device as claimed in claim 2 , wherein a plurality of optical semiconductor elements are mounted on the optical semiconductor element mounting substrate, and a minimum distance between the optical semiconductor elements on the optical semiconductor element mounting substrate is greater than the total thickness of the sealing films.
7. The method for producing a sealed optical semiconductor device as claimed in claim 3 , wherein each of the inner layer sealing film and the outermost sealing film has a thickness of not less than 10 μm and not more than 300 μm.
8. The method for producing a sealed optical semiconductor device as claimed in claim 3 , wherein the temperature T 2 is not less than 70° C. and not more than 180° C.
9. The method for producing a sealed optical semiconductor device as claimed in claim 1 , wherein at least one of the inner layer sealing film and the outermost layer sealing film comprises particles, and the particles are selected from phosphors and fillers.
10. The method for producing a sealed optical semiconductor device as claimed in claim 9 , wherein each of the inner layer sealing film and the outermost sealing film has a thickness of not less than 10 μm and not more than 300 μm.
11. The method for producing a sealed optical semiconductor device as claimed in claim 9 , wherein the temperature T 2 is not less than 70° C. and not more than 180° C.
12. The method for producing a sealed optical semiconductor device as claimed in claim 9 , wherein a plurality of optical semiconductor elements are mounted on the optical semiconductor element mounting substrate, and a minimum distance between the optical semiconductor elements on the optical semiconductor element mounting substrate is greater than the total thickness of the sealing films.
13. The method for producing a sealed optical semiconductor device as claimed in claim 1 , wherein each of the inner layer sealing film and the outermost sealing film has a thickness of not less than 10 μm and not more than 300 μm.
14. The method for producing a sealed optical semiconductor device as claimed in claim 13 , wherein the temperature T 2 is not less than 70° C. and not more than 180° C.
15. The method for producing a sealed optical semiconductor device as claimed in claim 1 , wherein the temperature T 2 is not less than 70° C. and not more than 180° C.
16. The method for producing a sealed optical semiconductor device as claimed in claim 1 , wherein a plurality of optical semiconductor elements are mounted on the optical semiconductor element mounting substrate, and a minimum distance between the optical semiconductor elements on the optical semiconductor element mounting substrate is greater than the total thickness of the sealing films.
17. The method for producing a sealed optical semiconductor device as claimed in claim 16 , wherein a plurality of optical semiconductor elements are mounted on the optical semiconductor element mounting substrate, and the aspect ratio (T/L) between the height T of the optical semiconductor element and the distance L between the optical semiconductor elements on the optical semiconductor element mounting substrate is, at maximum, not more than 3.
18. The method for producing a sealed optical semiconductor device as claimed in claim 1 , wherein a plurality of optical semiconductor elements are mounted on the optical semiconductor element mounting substrate, and the aspect ratio (T/L) between the height T of the optical semiconductor element and the distance L between the optical semiconductor elements on the optical semiconductor element mounting substrate is, at maximum, not more than 3.