Polishing liquid, polishing liquid set and polishing method
Provided is a CMP polishing liquid used for removing a part of an insulating portion of a base substrate, which includes a substrate, a stopper provided on one surface of the substrate, and the insulating portion provided on a surface of the stopper opposite to the substrate, by CMP to expose the stopper, the polishing liquid containing: abrasive grains containing cerium; a nonionic water-soluble compound A; a polymer compound B having at least one selected from the group consisting of carboxylic acid groups and carboxylate groups; a basic pH adjusting agent which is optionally contained; and water, in which a content of the basic pH adjusting agent is less than 1.3×10 −2 mol/kg based on the total mass of the polishing liquid.
1. A polishing liquid used for removing a part of an insulating portion of a base substrate, which includes a substrate, a stopper provided on one surface of the substrate, and the insulating portion provided on a surface of the stopper opposite to the substrate, by CMP to expose the stopper, the polishing liquid comprising:
abrasive grains containing cerium; a nonionic water-soluble component A comprising one or more of an acetylene-based diol and a polyalkylene glycol, an anionic polymer component B comprising one or more of a homopolymer of acrylic acid, a homopolymer of methacrylic acid, a copolymer of acrylic acid and methacrylic acid, and salts thereof; a basic pH adjusting agent; and water, wherein
a content of the basic pH adjusting agent ranges from 1.0×10 −4 mol/kg to less than 1.3×10 −2 mol/kg based on the total mass of the polishing liquid.
2. The polishing liquid according to claim 1 , wherein the abrasive grains contain cerium oxide.
3. The polishing liquid according to claim 1 , wherein a pH of the polishing liquid is 6.0 or less.
4. The polishing liquid according to claim 1 , wherein a pH of the polishing liquid is 5.0 or more.
5. The polishing liquid according to claim 1 , wherein a content of the anionic polymer component B is 0.35% by mass or less based on the total mass of the polishing liquid.
6. The polishing liquid according to claim 1 , wherein a content of the anionic polymer component B is 0.05% by mass or more based on the total mass of the polishing liquid.
7. The polishing liquid according to claim 1 , wherein when a pH of the polishing liquid is designated as x and a content of the anionic polymer component B based on the total mass of the polishing liquid is designated as y, a relation of y≥0.33x−1.7 is satisfied.
8. The polishing liquid according to claim 1 , wherein a content of the water-soluble component A is 0.005 to 0.3% by mass based on the total mass of the polishing liquid.
9. The polishing liquid according to claim 1 , wherein a content of the basic pH adjusting agent ranges from 1.0×10 −4 mol/kg to less than 5.0×10 −3 mol/kg based on the total mass of the polishing liquid.
10. The polishing liquid according to claim 1 , wherein a content of the abrasive grains is 0.2 to 5% by mass based on the total mass of the polishing liquid.
11. The polishing liquid according to claim 1 , further comprising at least one organic acid component comprising one or more of an organic acid and an organic acid salt.
12. The polishing liquid according to claim 11 , wherein the at least one organic acid component comprises at least two organic acids.
13. The polishing liquid according to claim 1 , wherein the stopper contains at least one stopper material comprising one or more of polysilicon, amorphous silicon, and single-crystal silicon.
14. A polishing liquid set comprising:
constituent components of the polishing liquid according to claim 1 stored while being divided into a first liquid and a second liquid, the first liquid containing the abrasive grains and water, the second liquid containing the water-soluble component A, the anionic polymer component B, and water.
15. A polishing method comprising a step of removing a part of the insulating portion of the base substrate by CMP using the polishing liquid according to claim 1 to expose the stopper.
16. The polishing liquid according to claim 1 , wherein the component A comprises polyethylene glycol and polypropylene glycol.
17. The polishing liquid according to claim 1 , wherein the stopper comprises polysilicon.
18. The polishing liquid according to claim 1 , wherein a pH of the polishing liquid is 4.0 or more and 6.0 or less.
19. A polishing liquid comprising:
abrasive grains comprising cerium;
a nonionic water-soluble component A comprising one or more of an acetylene-based diol and a polyalkylene glycol;
an anionic polymer component B comprising one or more of a homopolymer of acrylic acid, a homopolymer of methacrylic acid, a copolymer of acrylic acid and methacrylic acid, and salts thereof;
a basic pH adjusting agent comprising one or more of ammonia and imidazole, a content of the basic pH adjusting agent being less than 1.3×10 −2 mol/kg based on the total mass of the polishing liquid; and
water.
20. The polishing liquid according to claim 19 , wherein when a pH of the polishing liquid is designated as x and a content of the anionic polymer component B based on the total mass of the polishing liquid is designated as y, a relation of y≥0.33x−1.7 is satisfied.