IP Library › Granted Patent US 11,643,357
Granted Patent B2
US 11,643,357 · App. 16/638,783 · Granted May 9, 2023

Chalcogenide glass material

Inventors: Yoshimasa Matsushita (Otsu, JP); Fumio Sato (Otsu, JP)
Assignee: NIPPON ELECTRIC GLASS CO., LTD.
C03C3/321C03C4/10C03C17/3657G02B1/115
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Quick Facts
Patent No.
US 11,643,357
App. No.
16/638,783
Granted
May 9, 2023
Kind
B2
Abstract

Provided is a chalcogenide glass material having excellent weather resistance and being suitable as an optical element for an infrared sensor. The chalcogenide glass material contains, in terms of % by mole, 20 to 99% Te and has an antireflection film formed thereon.

Claims (13)

1. A chalcogenide glass material consisting of:

a glass base material, and

an antireflection film formed directly on the glass base material, wherein

the glass base material contains, in terms of % by mole, 20 to 99% Te, and

the antireflection film includes a lower-refractive index layer and a higher-refractive index layer stacked alternately one on top of another in a total of two or more layers, the higher-refractive index layer having a higher refractive index than that of the lower-refractive index layer,

a material of an outermost layer of the antireflection film, and thus also the outermost layer of the chalcogenide glass material, is at least one material selected from the group consisting of a metal oxide, hydrogenated carbon, diamond-like carbon, and ZnS, and

a material of a first layer of the antireflection film on a side facing the glass base material chalcogenide glass material is at least one material selected from the group consisting of ZnS, Ge, Si, Y 2 O 3 , TiO 2 , and HfO 2 .

2. The chalcogenide glass material according to claim 1 , wherein the glass base material contains, in terms of % by mole, 40 to 95% Te.

3. The chalcogenide glass material according to claim 1 , wherein the glass base material further contains, in terms of % by mole, 0 to 40% Ge.

4. The chalcogenide glass material according to claim 1 , wherein the glass base material further contains, in terms of % by mole, 0 to 30% Ga.

5. The chalcogenide glass material according to claim 1 , wherein the material of the outermost layer of the antireflection film is the metal oxide, and the metal oxide is at least one material selected from the group consisting of Y 2 O 3 , Al 2 O 3 , SiO, SiO 2 , MgO, TiO, TiO 2 , Ti 2 O 3 , CeO 2 , Bi 2 O 3 , and HfO 2 .

6. An optical element in which the chalcogenide glass material according to claim 1 is used.

7. An infrared sensor in which the optical element according to claim 6 is used.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 13, 2020
From: MATSUSHITA, YOSHIMASA; SATO, FUMIO
To: NIPPON ELECTRIC GLASS CO., LTD.
Reel/Frame 051807/0606 →
Priority Claims (1)
JP JP2017-174793 · Sep 12, 2017 · national
Continuity (1)
Related Publication 20200189964A1 · Jun 18, 2020