IP Library › Granted Patent US 11,335,715
Granted Patent B2
US 11,335,715 · App. 16/639,229 · Granted May 17, 2022

Solid-state imaging unit, method of producing the same, and electronic apparatus

Inventors: Masaya Nagata (Kanagawa, JP); Satoru Wakiyama (Kanagawa, JP)
Assignee: Sony Semiconductor Solutions Corporation
H01L27/14612H04N5/369H01L27/14629H01L27/14636
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 11,335,715
App. No.
16/639,229
Granted
May 17, 2022
Kind
B2
Abstract

The present technology relates to a solid-state imaging unit that makes it possible to increase the number of terminals, a method of producing the same, and an electronic apparatus. A solid-state imaging unit includes: an image sensor substrate including a light receiving region in which pixels that convert incoming light to an electric signal are arranged in a matrix; a solder ball; a glass substrate opposite the image sensor substrate and the solder ball; and a through electrode that couples a wiring line pattern and the solder ball to each other by penetrating a glass adhesive resin interposed between the wiring line pattern and the solder ball. The solder ball is disposed outside the image sensor substrate in a plane direction. The wiring line pattern being formed on the glass substrate. The present disclosure is applicable, for example, to a package and the like including the image sensor substrate.

Claims (39)

1. A solid-state imaging unit, comprising:

an image sensor substrate including a light receiving region in which pixels that each convert incoming light to an electric signal are arranged in a matrix;

an external terminal that outputs the electric signal, the external terminal being disposed outside the image sensor substrate;

a glass substrate disposed opposed to the image sensor substrate and the external terminal; and

a through electrode that couples a wiring line and the external terminal to each other by penetrating an adhesive resin interposed between the wiring line and the external terminal,

wherein the wiring line is formed on the glass substrate,

wherein the external terminal is disposed outside a molding resin on a same plane as a plane of the image sensor substrate, and

wherein the through electrode is also formed to penetrate the molding resin.

2. The solid-state imaging unit according to claim 1 , wherein the adhesive resin is interposed between the image sensor substrate and the glass substrate.

3. The solid-state imaging unit according to claim 1 , wherein the molding resin is also formed on a surface of the image sensor substrate, the surface being opposite to the glass substrate side.

4. The solid-state imaging unit according to claim 1 , further comprising a first heat-dissipating plate between the molding resin and the adhesive resin.

5. The solid-state imaging unit according to claim 1 , further comprising a metal film on a surface of the image sensor substrate, the surface being opposite to the glass substrate side.

6. The solid-state imaging unit according to claim 5 , further comprising a dummy external terminal on a surface of the metal film.

7. The solid-state imaging unit according to claim 5 , wherein the metal film has a plurality of through holes.

8. The solid-state imaging unit according to claim 5 , wherein the metal film is formed to be coupled to at least one of a plurality of the external terminals.

9. The solid-state imaging unit according to claim 1 , further comprising a companion chip on a surface of the image sensor substrate, the surface being opposite to the glass substrate side.

10. The solid-state imaging unit according to claim 1 , further comprising:

an electrode pad on a surface of the image sensor substrate, the surface being opposed to the glass substrate, wherein the electrode pad is coupled to the wiring line formed on the glass substrate.

11. The solid-state imaging unit according to claim 1 , further comprising:

a first heat-dissipating plate on a surface of the adhesive resin, the surface being opposite to the glass substrate side.

12. The solid-state imaging unit according to claim 1 , wherein the adhesive resin is transmissive to light.

13. A solid-state imaging unit, comprising:

an image sensor substrate including a light receiving region in which pixels that each convert incoming light to an electric signal are arranged in a matrix;

an external terminal that outputs the electric signal, the external terminal being disposed outside die image sensor substrate;

a glass substrate disposed opposed to the image sensor substrate and the external terminal;

a through electrode that couples a wiring line and the external terminal to each other by penetrating an adhesive resin interposed between the wiring line and the external terminal, wherein the wiring line is formed on the glass substrate; and

a first heat-dissipating plate on a surface of the adhesive resin, the surface being opposite to the glass substrate side.

14. The solid-state imaging unit according to claim 13 , further comprising a second heat-dissipating plate on a surface of the image sensor substrate, the surface being opposite to the glass substrate side.

15. The solid-state imaging unit according to claim 13 , wherein the first heat-dissipating plate is formed to be coupled to at least one of a plurality of the through electrodes.

16. The solid-state imaging unit according to claim 13 , wherein the first heat-dissipating plate is formed to be coupled to at least one of a plurality of the external terminals.

17. A solid-state imaging unit, comprising:

an image sensor substrate including a light receiving region in which pixels that each convert incoming light to an electric signal are arranged in a matrix;

an external terminal that outputs the electric signal, the external terminal being disposed outside the image sensor substrate;

a glass substrate disposed opposed to the image sensor substrate and the external terminal; and

a through electrode that couples a wiring line and the external terminal to each other by penetrating an adhesive resin interposed between the wiring line and the external terminal, wherein the wiring line is formed on the glass substrate, wherein the adhesive resin is transmissive to light.

18. The solid-state imaging unit according to claim 17 wherein the adhesive resin has a refractive index similar to a refractive index of the glass substrate.

19. The solid-state imaging unit according to claim 17 , wherein the adhesive resin has a refractive index lower than a refractive index of an on-chip lens formed on the image sensor substrate.

20. The solid-state imaging unit according to claim 17 , further comprising:

a first heat-dissipating plate on a surface of the adhesive resin, the surface being opposite to the glass substrate side.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 9, 2020
From: NAGATA, MASAYA; WAKIYAMA, SATORU
To: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
Reel/Frame 054313/0009 →
Priority Claims (1)
JP JP2017-159090 · Aug 22, 2017 · national
Continuity (1)
Related Publication 20200203408A1 · Jun 25, 2020