Power conversion circuit
Provided is a power conversion circuit for achieving a power conversion device capable of suppressing charging/discharging of a parasitic capacitor caused by high-frequency switching, and of reducing a loss of a semiconductor switching element. The power conversion circuit includes: a circuit board including a plurality of layers including two or more layers, on which circuit patterns are formed; and a plurality of semiconductor switching elements connected to the circuit patterns of the circuit board, and configured to perform switching for power conversion. In the circuit board, a plurality of control ground patterns for different nodes, which are configured to drive the plurality of semiconductor switching elements, are arranged so as not to overlap one another in plan view.
1. A power conversion circuit, comprising:
a circuit board including a plurality of layers including two or more layers, on which circuit patterns are formed, said layers being stacked in an orthogonal direction; and
a plurality of semiconductor switching elements, which are connected to the circuit patterns of the circuit board, and are configured to perform switching for power conversion,
wherein, in the circuit board, a plurality of control ground patterns for different nodes, which are configured to drive the plurality of semiconductor switching elements, are arranged so as not to overlap one another in plan view.
2. The power conversion circuit according to claim 1 , wherein the plurality of semiconductor switching elements are each formed of a wide-bandgap semiconductor.
3. The power conversion circuit according to claim 1 , further comprising:
at least one half-bridge circuit including the plurality of semiconductor switching elements;
a first control ground pattern, which is connected to a source of a first semiconductor switching element that forms the at least one half-bridge circuit, and is connected to a ground of a driver configured to drive the first semiconductor switching element; and
a second control ground pattern, which is connected to a source of a second semiconductor switching element that forms the at least one half-bridge circuit, the source being different from the source of the first semiconductor switching element, and is connected to a ground of a driver configured to drive the second semiconductor switching element,
wherein the first control ground pattern and the second control ground pattern are provided in positions not overlapping each other in a stacking direction of the plurality of layers of the circuit board.
4. The power conversion circuit according to claim 1 , further comprising:
at least one half-bridge circuit including the plurality of semiconductor switching elements;
a first control ground pattern, which is connected to a source of a first semiconductor switching element that forms the at least one half-bridge circuit, and is connected to a ground of a driver configured to drive the first semiconductor switching element; and
a second control ground pattern, which is connected to a source of a second semiconductor switching element that forms the at least one half-bridge circuit, the source being different from the source of the first semiconductor switching element, and is connected to a ground of a driver configured to drive the second semiconductor switching element,
wherein the first control ground pattern and the second control ground pattern are provided in different positions in the same layer of the circuit board.
5. The power conversion circuit according to claim 3 , wherein a first control power supply pattern using the first control ground pattern as a reference and a second control power supply pattern using the second control ground pattern as a reference are arranged in different positions in the same layer of the circuit board.
6. The power conversion circuit according to claim 3 , wherein the first control ground pattern and the second control ground pattern are isolated from a housing of the power conversion circuit.
7. The power conversion circuit according to claim 5 , wherein the first control ground pattern and the first control power supply pattern are provided in positions overlapping each other in the stacking direction of the plurality of layers of the circuit board, and the second control ground pattern and the second control power supply pattern are provided in positions overlapping each other in the stacking direction of the plurality of layers of the circuit board.
8. The power conversion circuit according to claim 3 , wherein the first semiconductor switching element and the second semiconductor switching element are semiconductor switching elements of an upper arm and a lower arm, which form one half-bridge circuit.
9. The power conversion circuit according to claim 3 ,
wherein the power conversion circuit includes a plurality of the half-bridge circuits, and
wherein the first semiconductor switching element and the second semiconductor switching element are semiconductor switching elements of upper arms of different half-bridge circuits.
10. The power conversion circuit according to claim 1 ,
wherein the plurality of semiconductor switching elements are semiconductor switching elements made of GaN.