IP Library Granted Patent US 11,702,569
Granted Patent B2
US 11,702,569 · App. 16/642,120 · Granted Jul 18, 2023

Slurry and polishing method

Inventors: Takaaki Matsumoto (Tokyo, JP); Tomohiro Iwano (Tokyo, JP); Tomoyasu Hasegawa (Tokyo, JP)
Assignee: RESONAC CORPORATION
C09G1/02C09K3/1436H01L21/31053
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Quick Facts
Patent No.
US 11,702,569
App. No.
16/642,120
Granted
Jul 18, 2023
Kind
B2
Abstract

A slurry containing abrasive grains, a liquid medium, and a salt of a compound represented by formula (1) below, in which the abrasive grains include first particles and second particles in contact with the first particles, the first particles contain cerium oxide, and the second particles contain a hydroxide of a tetravalent metal element. [In formula (1), R represents a hydroxyl group or a monovalent organic group].

Claims (54)

1. A slurry comprising:

abrasive grains;

a liquid medium; and

a salt of a compound represented by formula (1) below

in formula (1), R represents a hydroxyl group or a monovalent organic group, wherein

the abrasive grains include first particles and second particles in contact with the first particles,

the first particles contain cerium oxide,

the second particles contain a hydroxide of a tetravalent metal element,

the average particle size of the second particles is smaller than the average particle size of the first particles,

the average secondary particle size of the abrasive grains is more than 100 nm,

the salt of the compound represented by formula (1) contains at least one selected from the group consisting of a compound represented by formula (2) below and a compound represented by formula (3) below

in formula (2), R represents a hydroxyl group or a monovalent organic group, and X + represents an ammonium ion,

in formula (3), R represents a hydroxyl group or a monovalent organic group, and X + represents an ammonium ion, and

pH of the slurry is 7.0 or lower.

2. The slurry according to claim 1 , wherein the hydroxide of a tetravalent metal element contains at least one selected from the group consisting of hydroxides of rare earth metal elements and hydroxide of zirconium.

3. The slurry according to claim 1 , wherein a content of the abrasive grains is 0.01 to 10% by mass on the basis of the total mass of the slurry.

4. The slurry according to claim 1 , wherein R is a hydroxyl group in formula (2) and formula (3).

5. The slurry according to claim 1 , wherein a content of the salt of the compound represented by formula (1) is 0.001 to 0.1% by mass on the basis of the total mass of the slurry.

6. The slurry according to claim 1 , wherein the slurry is used for polishing a body to be polished containing silicon oxide.

7. A polishing method comprising a step of polishing a body to be polished by using the slurry according to claim 1 .

8. The polishing method according to claim 7 , wherein the body to be polished contains silicon oxide.

9. The slurry according to claim 1 , wherein pH of the slurry is 6.5 or lower.

10. The slurry according to claim 1 , wherein a content of the salt of the compound represented by formula (1) is 0.03% by mass or less on the basis of the total mass of the slurry.

11. The slurry according to claim 1 , wherein the particle size of the second particles is 1 nm or more and 25 nm or less.

12. The slurry according to claim 1 , wherein the salt of the compound represented by formula (1) comprises one or more of ammonium dihydrogen phosphate and diammonium hydrogen phosphate.

13. The slurry according to claim 1 , wherein the average secondary particle size of the abrasive grains is more than 100 nm and 1000 nm or less.

14. A slurry comprising:

abrasive grains;

a liquid medium; and

a salt of a compound represented by formula (1) below

in formula (1), R represents a hydroxyl group or a monovalent organic group, wherein

the abrasive grains include first particles and second particles in contact with the first particles,

the first particles contain cerium oxide,

the second particles contain a hydroxide of a tetravalent metal element,

the average particle size of the second particles is smaller than the average particle size of the first particles,

the average secondary particle size of the abrasive grains is more than 100 nm and 1000 nm or less,

the salt of the compound represented by formula (1) contains an ammonium salt,

a content of the salt of the compound represented by formula (1) is 0.03% by mass or less on the basis of the total mass of the slurry, and

pH of the slurry is 7.0 or lower.

15. A slurry comprising:

abrasive grains;

a liquid medium; and

a salt of a compound represented by formula (1) below

in formula (1), R represents a hydroxyl group or a monovalent organic group, wherein

the abrasive grains include first particles and second particles in contact with the first particles,

the first particles contain cerium oxide,

the second particles contain a hydroxide of a tetravalent metal element,

the average particle size of the second particles is smaller than the average particle size of the first particles,

the average secondary particle size of the abrasive grains is more than 100 nm, and

the salt of the compound represented by formula (1) contains an ammonium salt of a compound represented by represented by formula (1a) below,

in formula (1a), R 1 represents a divalent organic group.

16. The slurry according to claim 15 , wherein pH of the slurry is 7.0 or lower.

17. The slurry according to claim 1 , wherein the content of the abrasive grains is less than 1% by mass on the basis of the total mass of the slurry.

18. The slurry according to claim 14 , wherein pH of the slurry is 6.5 or lower.

Assignments (4)
CHANGE OF ADDRESS Recorded Feb 14, 2024
From: RESONAC CORPORATION
To: RESONAC CORPORATION
Reel/Frame 066599/0037 →
CHANGE OF NAME Recorded Mar 3, 2023
From: SHOWA DENKO MATERIALS CO., LTD.
To: RESONAC CORPORATION
Reel/Frame 062946/0125 →
CHANGE OF NAME Recorded Mar 2, 2023
From: HITACHI CHEMICAL COMPANY, LTD.
To: SHOWA DENKO MATERIALS CO., LTD.
Reel/Frame 062917/0865 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 14, 2020
From: MATSUMOTO, TAKAAKI; IWANO, TOMOHIRO; HASEGAWA, TOMOYASU
To: HITACHI CHEMICAL COMPANY, LTD.
Reel/Frame 052388/0282 →
Priority Claims (1)
WO PCT/JP2017/031087 · Aug 30, 2017 · international
Continuity (1)
Related Publication 20200299545A1 · Sep 24, 2020