Avalanche photodiode and method of manufacturing the same
View Patent ↗An n-type semiconductor layer ( 102 ), a multiplication layer ( 103 ), an electric field control layer ( 104 ), a light absorption layer ( 105 ), and a p-type semiconductor layer ( 106 ) are formed on a growth substrate ( 101 ), and the p-type semiconductor layer ( 106 ) is adhered on a transfer substrate ( 107 ). After that, the growth substrate ( 101 ) is removed, and the n-type semiconductor layer ( 102 ) is processed to have an area smaller than that of the multiplication layer ( 103 ).
1. A method of manufacturing an avalanche photodiode including:
a p-type semiconductor layer formed on a transfer substrate and made of a p-type semiconductor;
a light absorption layer formed on the p-type semiconductor layer and made of germanium;
an electric field control layer formed on the light absorption layer and made of a p-type semiconductor;
a multiplication layer formed on the electric field control layer and made of silicon; and
an n-type semiconductor layer formed on the multiplication layer and made of n-type silicon,
the method comprising:
a first step of forming the n-type semiconductor layer, the multiplication layer, the electric field control layer, and the light absorption layer on a growth substrate;
a second step of transferring the n-type semiconductor layer, the multiplication layer, the electric field control layer, and the light absorption layer formed on the growth substrate to the transfer substrate; and
a third step of processing the n-type semiconductor layer to have an area smaller than that of the multiplication layer, after the n-type semiconductor layer, the multiplication layer, the electric field control layer, and the light absorption layer are transferred to the transfer substrate.
2. The method of manufacturing an avalanche photodiode according to claim 1 , wherein
the first step including forming the n-type semiconductor layer, the multiplication layer, the electric field control layer, the light absorption layer, and the p-type semiconductor layer in this order on the growth substrate, and
the second step includes:
a step of transferring the n-type semiconductor layer, the multiplication layer, the electric field control layer, and the light absorption layer formed on the growth substrate to the transfer substrate by adhering the p-type semiconductor layer on the transfer substrate; and
a step of removing the growth substrate after the p-type semiconductor layer is adhered on the transfer substrate.
3. The method of manufacturing an avalanche photodiode according to claim 2 , further comprising a fourth step of processing the n-type semiconductor layer to have an area smaller than that of the multiplication layer, and forming an insulating layer on the multiplication layer around the n-type semiconductor layer thereafter.
4. The method of manufacturing an avalanche photodiode according to claim 2 , further comprising a step of forming a p-type region on a side of the light absorption layer, which faces the p-type semiconductor layer.
5. The method of manufacturing an avalanche photodiode according to claim 2 , wherein the second step includes:
a step of forming a metal layer on the transfer substrate; and
a step of transferring the n-type semiconductor layer, the multiplication layer, the electric field control layer, and the light absorption layer formed on the growth substrate to the transfer substrate on which the metal layer is formed.
6. The method of manufacturing an avalanche photodiode according to claim 1 , wherein
the first step includes:
a step of forming the n-type semiconductor layer, the multiplication layer, the electric field control layer, and the light absorption layer in this order on the growth substrate; and
a step of forming the p-type semiconductor layer on the transfer substrate, and
the second step includes:
a step of transferring the n-type semiconductor layer, the multiplication layer, the electric field control layer, and the light absorption layer formed on the growth substrate to the transfer substrate by adhering the p-type semiconductor layer on the light absorption layer; and
a step of removing the growth substrate after the p-type semiconductor layer is adhered on the light absorption layer.
7. The method of manufacturing an avalanche photodiode according to claim 6 , further comprising a fourth step of processing the n-type semiconductor layer to have an area smaller than that of the multiplication layer, and forming an insulating layer on the multiplication layer around the n-type semiconductor layer thereafter.
8. The method of manufacturing an avalanche photodiode according to claim 6 , further comprising a step of forming a p-type region on a side of the light absorption layer, which faces the p-type semiconductor layer.
9. The method of manufacturing an avalanche photodiode according to claim 6 , wherein the second step includes:
a step of forming a metal layer on the transfer substrate; and
a step of transferring the n-type semiconductor layer, the multiplication layer, the electric field control layer, and the light absorption layer formed on the growth substrate to the transfer substrate on which the metal layer is formed.
10. The method of manufacturing an avalanche photodiode according to claim 1 , further comprising a fourth step of processing the n-type semiconductor layer to have an area smaller than that of the multiplication layer, and forming an insulating layer on the multiplication layer around the n-type semiconductor layer thereafter.
11. The method of manufacturing an avalanche photodiode according to claim 10 , further comprising a step of forming a p-type region on a side of the light absorption layer, which faces the p-type semiconductor layer.
12. The method of manufacturing an avalanche photodiode according to claim 10 , wherein the second step includes:
a step of forming a metal layer on the transfer substrate; and
a step of transferring the n-type semiconductor layer, the multiplication layer, the electric field control layer, and the light absorption layer formed on the growth substrate to the transfer substrate on which the metal layer is formed.
13. The method of manufacturing an avalanche photodiode according to claim 1 , further comprising a step of forming a p-type region on a side of the light absorption layer, which faces the p-type semiconductor layer.
14. The method of manufacturing an avalanche photodiode according to claim 13 , wherein the second step includes:
a step of forming a metal layer on the transfer substrate; and
a step of transferring the n-type semiconductor layer, the multiplication layer, the electric field control layer, and the light absorption layer formed on the growth substrate to the transfer substrate on which the metal layer is formed.
15. The method of manufacturing an avalanche photodiode according to claim 1 , wherein the second step includes:
a step of forming a metal layer on the transfer substrate; and
a step of transferring the n-type semiconductor layer, the multiplication layer, the electric field control layer, and the light absorption layer formed on the growth substrate to the transfer substrate on which the metal layer is formed.
16. An avalanche photodiode comprising:
a p-type semiconductor layer formed on a substrate and made of a p-type semiconductor;
a light absorption layer formed on the p-type semiconductor layer and made of germanium;
an electric field control layer formed on the light absorption layer and made of a p-type semiconductor;
a multiplication layer formed on the electric field control layer and made of silicon;
an n-type semiconductor layer formed on the multiplication layer, made of n-type silicon, and having an area smaller than that of the multiplication layer; and
an insulating layer formed only on a region around the n-type semiconductor layer out of a surface, contacting with the n-type semiconductor layer, of the multiplication layer.
17. An Avalanche photodiode comprising:
a p-type semiconductor layer formed on a substrate and made of a p-type semiconductor;
a light absorption layer formed on the p-type semiconductor layer and made of germanium;
an electric field control layer formed on the light absorption layer and made of a p-type semiconductor;
a multiplication layer formed on the electric field control layer and made of silicon, and
an n-type semiconductor layer formed on the multiplication layer, made of n-type silicon, having an area smaller than that of the multiplication layer, further comprising a metal layer formed between the substrate and the p-type semiconductor layer.