High radiation detection performance from photoactive semiconductor single crystals
Methods and devices for detecting incident radiation are provided. The methods and devices use high quality single-crystals of photoactive semiconductor compounds in combination with metal anodes and metal cathodes that provide for enhanced photodetector performance.
1. A device for the detection of incident radiation comprising:
single-crystalline CsPbX 3 , where X represents Br or Cl;
at least one metal anode in electrical communication with the CsPbX 3 ;
at least one metal cathode in electrical communication with the CsPbX 3 , wherein the metal anode is selected from the group consisting of a gallium anode, an indium anode, an aluminum anode, a lead anode, and a magnesium anode, and the metal cathode is selected from a gold cathode and a platinum cathode;
a detector configured to measure a signal generated by electron-hole pairs that are formed when the material is exposed to incident gamma radiation and/or nuclear radiation.
2. The device of claim 1 , wherein the metal anode is the gallium anode.
3. The device of claim 2 , wherein the metal cathode is the gold cathode.
4. The device of claim 3 , wherein X represents Br and the metal cathode is the gold cathode.
5. The device of claim 2 , wherein the metal cathode is the platinum cathode.
6. The device of claim 1 , wherein the metal anode is the indium anode.
7. The device of claim 6 , wherein the metal cathode is the gold cathode.
8. The device of claim 6 , wherein the metal cathode is the platinum cathode.
9. The device of claim 1 , wherein the metal anode is the aluminum anode.
10. The device of claim 9 , wherein the metal cathode is the gold cathode.
11. The device of claim 9 , wherein the metal cathode is the platinum cathode.
12. The device of claim 1 , wherein the metal anode is the lead anode.
13. The device of claim 12 , wherein the metal cathode is the gold cathode.
14. The device of claim 12 , wherein the metal cathode is the platinum cathode.
15. The device of claim 1 , wherein the metal anode is the magnesium anode.
16. The device of claim 15 , wherein the metal cathode is a gold cathode.
17. The device of claim 15 , wherein the metal cathode is the platinum cathode.
18. The device of claim 1 , wherein the CsPbX 3 is intentionally doped with an element having an atomic number in the range from 1 to 83.
19. The device of claim 18 , wherein the CsPbX 3 has a purity of at least 99.99%, excluding the intentional dopants.
20. The device of claim 1 , wherein the device is encapsulated in wax or a polymer coating.
21. A method for detecting incident radiation using
a device for comprising:
single-crystalline CsPbX 3 , where X represents Br or Cl;
at least one metal anode in electrical communication with the CsPbX 3 ;
at least one metal cathode in electrical communication with the CsPbX 3 , wherein the metal anode is selected from the group consisting of a gallium anode, an indium anode, an aluminum anode, a lead anode, and a magnesium anode, and the metal cathode is selected from a gold cathode and a platinum cathode;
a detector configured to measure a signal generated by electron-hole pairs that are formed when the material is exposed to incident gamma radiation and/or nuclear radiation,
the method comprising:
exposing the photoactive, single-crystalline semiconductor to incident gamma radiation and/or nuclear radiation, wherein the material absorbs the incident gamma radiation and/or nuclear radiation and electron-hole pairs are generated in the material; and
measuring at least one of the energy or intensity of the absorbed incident gamma radiation by detecting the generated electrons, holes, or both.