Semiconductor element mounting structure, and combination of semiconductor element and substrate
Provided is a semiconductor element mounting structure, including: a semiconductor element including an element electrode, and a substrate including a substrate electrode that is provided on a surface facing the semiconductor element at a position facing the element electrode, the semiconductor element and the substrate being connected via the element electrode and the substrate electrode, in which: one of the element electrode or the substrate electrode is a first protruding electrode including a solder layer at a tip portion thereof, the other of the element electrode or the substrate electrode is a first electrode pad including one or more metal protrusions on a surface thereof, the one or more metal protrusions of the first electrode pad extend into the solder layer of the first protruding electrode, and a bottom area of each of the one or more metal protrusions of the first electrode pad is 70% or less with respect to an area of the first electrode pad, or 75% or less with respect to a maximum cross-sectional area of the solder layer of the first protruding electrode.
1. A semiconductor element mounting structure, comprising:
a semiconductor element comprising an element electrode, and a substrate comprising a substrate electrode that is provided on a surface facing the semiconductor element at a position facing the element electrode, the semiconductor element and the substrate being connected via the element electrode and the substrate electrode, wherein:
one of the element electrode or the substrate electrode is a first protruding electrode comprising a solder layer at a tip portion thereof,
the other of the element electrode or the substrate electrode is a first electrode pad comprising one or more metal protrusions on a surface thereof,
the one or more metal protrusions of the first electrode pad extend into the solder layer of the first protruding electrode, and
a bottom area of each of the one or more metal protrusions of the first electrode pad is 70% or less with respect to a maximum cross-sectional area of the solder layer of the first protruding electrode; and
at least one further semiconductor element provided at an opposite side of the semiconductor element from the side facing the substrate, the at least one further semiconductor element being layered in a state such that each semiconductor element is connected via an element electrode, wherein:
one of an element electrode of the semiconductor element provided at an opposite side of the semiconductor element from the side facing the substrate or an element electrode of the other further semiconductor element is a second protruding electrode comprising a solder layer at a tip portion thereof,
the other of the element electrode of the semiconductor element provided at an opposite side of the semiconductor element from the side facing the substrate or the element electrode of the other further semiconductor element is a second electrode pad comprising one or more metal protrusions on a surface thereof,
the one or more metal protrusions of the second electrode pad extend into the solder layer of the second protruding electrode, and
a bottom area of each of the one or more metal protrusions of the second electrode pad is 70% or less with respect to a maximum cross-sectional area of the solder layer of the second protruding electrode.
2. The semiconductor element mounting structure according to claim 1 , wherein a shape of each of the one or more metal protrusions is a cylindrical column or a rectangular parallelepiped.
3. The semiconductor element mounting structure according to claim 1 , wherein each of the one or more metal protrusions has a shape wherein at least two cylindrical columns or rectangular parallelepipeds are stacked in a height direction.
4. The semiconductor element mounting structure according to claim 1 , wherein each of the one or more metal protrusions is photolithographically formed.
5. The semiconductor element mounting structure according to claim 1 , obtained by temporarily fixing the semiconductor element and the substrate in a state wherein at least a portion of the one or more metal protrusions of the first electrode pad is extended into the solder layer of the first protruding electrode by pressurization, and melting the solder layer of the first protruding electrode by heating to connect the element electrode and the substrate electrode.
6. The semiconductor element mounting structure according to claim 1 , wherein the bottom area of each of the one or more metal protrusions of the first electrode pad is 50% or less with respect to a maximum cross-sectional area of the solder layer of the first protruding electrode, and the bottom area of each of the one or more metal protrusions of the second electrode pad is 50% or less with respect to a maximum cross-sectional area of the solder layer of the second protruding electrode.
7. The semiconductor element mounting structure according to claim 1 , wherein the bottom area of each of the one or more metal protrusions of the first electrode pad is 10% or more with respect to a maximum cross-sectional area of the solder layer of the second protruding electrode, and the bottom area of each of the one or more metal protrusions of the second electrode pad is 10% or more with respect to a maximum cross-sectional area of the solder layer of the second protruding electrode.
8. A combination of a semiconductor element and a substrate, comprising:
the semiconductor element comprising an element electrode, and the substrate comprising a substrate electrode that is provided on a surface facing the semiconductor element at a position facing the element electrode, wherein:
one of the element electrode or the substrate electrode is a protruding electrode comprising a solder layer at a tip portion thereof,
the other of the element electrode or the substrate electrode is an electrode pad comprising one or more metal protrusions on a surface thereof, and
a bottom area of each of the one or more metal protrusions is 70% or less with respect to a maximum cross-sectional area of the solder layer of the protruding electrode; and
at least one further semiconductor element provided facing the semiconductor element at an opposite side of the semiconductor element from the side facing the substrate, wherein:
one of an element electrode of the semiconductor element provided at an opposite side of the semiconductor element from the side facing the substrate or an element electrode of the other further semiconductor element is a second protruding electrode comprising a solder layer at a tip portion thereof,
the other of the element electrode of the semiconductor element provided at an opposite side of the semiconductor element from the side facing the substrate or the element electrode of the other further semiconductor element is a second electrode pad comprising one or more metal protrusions on a surface thereof, and
a bottom area of each of the one or more metal protrusions of the second electrode pad is 70% or less with respect to a maximum cross-sectional area of the solder layer of the second protruding electrode.
9. The combination of a semiconductor element and a substrate according to claim 8 , wherein the bottom area of each of the one or more metal protrusions is 50% or less with respect to a maximum cross-sectional area of the solder layer of the protruding electrode, and the bottom area of each of the one or more metal protrusions of the second electrode pad is 50% or less with respect to a maximum cross-sectional area of the solder layer of the second protruding electrode.
10. The combination of a semiconductor element and a substrate according to claim 8 , wherein the bottom area of each of the one or more metal protrusions is 10% or more with respect to a maximum cross-sectional area of the solder layer of the protruding electrode, and the bottom area of each of the one or more metal protrusions of the second electrode pad is 10% or more with respect to a maximum cross-sectional area of the solder layer of the second protruding electrode.
11. A semiconductor element mounting structure, comprising:
a semiconductor element comprising an element electrode, and a substrate comprising a substrate electrode that is provided on a surface facing the semiconductor element at a position facing the element electrode, the semiconductor element and the substrate being connected via the element electrode and the substrate electrode, wherein:
one of the element electrode or the substrate electrode is a first protruding electrode comprising a solder layer at a tip portion thereof,
the other of the element electrode or the substrate electrode is a first electrode pad comprising one or more metal protrusions on a surface thereof,
the one or more metal protrusions of the first electrode pad extend into the solder layer of the first protruding electrode, and
a bottom area of each of the one or more metal protrusions of the first electrode pad is 70% or less with respect to an area of the first electrode pad; and and
at least one further semiconductor element provided at an opposite side of the semiconductor element from the side facing the substrate, the at least one further semiconductor element being layered in a state such that each semiconductor element is connected via an element electrode, wherein:
one of an element electrode of the semiconductor element provided at an opposite side of the semiconductor element from the side facing the substrate or an element electrode of the other further semiconductor element is a second protruding electrode comprising a solder layer at a tip portion thereof,
the other of the element electrode of the semiconductor element provided at an opposite side of the semiconductor element from the side facing the substrate or the element electrode of the other further semiconductor element is a second electrode pad comprising one or more metal protrusions on a surface thereof,
the one or more metal protrusions of the second electrode pad extend into the solder layer of the second protruding electrode, and
a bottom area of each of the one or more metal protrusions of the second electrode pad is 70% or less with respect to an area of the second electrode pad.
12. The semiconductor element mounting structure according to claim 11 , wherein a shape of each of the one or more metal protrusions is a cylindrical column or a rectangular parallelepiped.
13. The semiconductor element mounting structure according to claim 11 , wherein each of the one or more metal protrusions has a shape wherein at least two cylindrical columns or rectangular parallelepipeds are stacked in a height direction.
14. The semiconductor element mounting structure according to claim 11 , wherein each of the one or more metal protrusions is photolithographically formed.
15. The semiconductor element mounting structure according to claim 11 , obtained by temporarily fixing the semiconductor element and the substrate in a state wherein at least a portion of the one or more metal protrusions of the first electrode pad is extended into the solder layer of the first protruding electrode by pressurization, and melting the solder layer of the first protruding electrode by heating to connect the element electrode and the substrate electrode.
16. The semiconductor element mounting structure according to claim 11 , wherein the bottom area of each of the one or more metal protrusions of the first electrode pad is 50% or less with respect to an area of the first electrode pad, and the bottom area of each of the one or more metal protrusions of the second electrode pad is 50% or less with respect to an area of the second electrode pad.
17. The semiconductor element mounting structure according to claim 11 , wherein the bottom area of each of the one or more metal protrusions of the first electrode pad is 10% or more with respect to an area of the first electrode pad, and the bottom area of each of the one or more metal protrusions of the second electrode pad is 10% or more with respect to an area of the second electrode pad.
18. A combination of a semiconductor element and a substrate, comprising:
the semiconductor element comprising an element electrode, and the substrate comprising a substrate electrode that is provided on a surface facing the semiconductor element at a position facing the element electrode, wherein:
one of the element electrode or the substrate electrode is a protruding electrode comprising a solder layer at a tip portion thereof,
the other of the element electrode or the substrate electrode is an electrode pad comprising one or more metal protrusions on a surface thereof, and
a bottom area of each of the one or more metal protrusions is 70% or less with respect to an area of the electrode pad; and
at least one further semiconductor element provided facing the semiconductor element at an opposite side of the semiconductor element from the side facing the substrate, wherein:
one of an element electrode of the semiconductor element provided at an opposite side of the semiconductor element from the side facing the substrate or an element electrode of the other further semiconductor element is a second protruding electrode comprising a solder layer at a tip portion thereof,
the other of the element electrode of the semiconductor element provided at an opposite side of the semiconductor element from the side facing the substrate or the element electrode of the other further semiconductor element is a second electrode pad comprising one or more metal protrusions on a surface thereof, and
a bottom area of each of the one or more metal protrusions of the second electrode pad is 70% or less with respect to an area of the second electrode pad.
19. The combination of a semiconductor element and a substrate according to claim 18 , wherein the bottom area of each of the one or more metal protrusions is 50% or less with respect to an area of the electrode pad, and the bottom area of each of the one or more metal protrusions of the second electrode pad is 50% or less with respect to an area of the second electrode pad.
20. The combination of a semiconductor element and a substrate according to claim 18 , wherein the bottom area of each of the one or more metal protrusions is 10% or more with respect to an area of the electrode pad, and the bottom area of each of the one or more metal protrusions of the second electrode pad is 10% or more with respect to an area of the second electrode pad.