Plasma processing apparatus
A plasma processing apparatus includes a processing chamber in which a wafer 1 is processed by using plasma, a radio-frequency power supply that supplies radio-frequency power for generating the plasma, a sample table 2 which is arranged in the processing chamber and in which the wafer 1 is mounted, and a DC power supply 106 which is electrically connected to the sample table 2 and which causes the sample table 2 to generate a suction force. The sample table 2 includes a protruded portion 201 a that sucks the wafer 1 by the suction force and a level different portion 201 b protruding from a lower portion of the protruded portion 201 a. A ring 5 that can be in contact with a lower surface of the wafer 1 is provided outside the protruded portion 201 a. A space portion 7 formed by the wafer 1, the protruded portion 201 a, and the ring 5 is sealed in a state in which the wafer 1 is sucked to an upper surface of the protruded portion 201 a of the sample table 2.
1. A plasma processing apparatus comprising:
a processing chamber in which a sample is processed by using plasma; a radio-frequency power supply that supplies radio-frequency power for generating the plasma; a sample table which is arranged in the processing chamber and in which the sample is mounted; and a first DC power supply which is electrically connected to the sample table and which causes the sample table to generate a suction force, wherein
the sample table includes a protruded portion that sucks the sample by the suction force,
a ring-shaped member provided outside the protruded portion and comprising a vertical portion arranged along an outer circumferential portion of the protruded portion, an upper end of the vertical portion being in contact with a lower surface of the sample when the sample is mounted on the sample table,
a ring-shaped susceptor composed of a dielectric is provided outside the ring-shaped member, and
in a state in which the sample is sucked to an upper surface of the protruded portion of the sample table, a space portion formed by the sample, the protruded portion, and the ring-shaped member is sealed.
2. The plasma processing apparatus according to claim 1 , wherein
in a state in which the sample is sucked to the upper surface of the protruded portion of the sample table, a peripheral edge portion of the lower surface of the sample and the upper end of the ring-shaped member are in contact with each other and an inner circumferential portion of the susceptor overlaps with the peripheral edge portion of the sample in plan view.
3. The plasma processing apparatus according to claim 1 , wherein
the sample table and the ring-shaped member are tightly adhered by an adhesive, and
in a state in which the sample is sucked to the upper surface of the protruded portion of the sample table, the sealed space portion is filled with a cooling gas.
4. The plasma processing apparatus according to claim 1 , further comprising:
an electrostatic suction electrode incorporated in the ring-shaped member; and
a second DC power supply electrically connected to the electrostatic suction electrode, wherein
the ring-shaped member and the sample table are tightly adhered by a suction force generated by a DC voltage applied to the electrostatic suction electrode from the second DC power supply, and
in a state in which the sample is sucked to the upper surface of the protruded portion of the sample table, the sealed space portion is filled with a cooling gas.
5. The plasma processing apparatus according to claim 1 , wherein
the sample table and the ring-shaped member are fastened together by a screw inserted from a lower side of the sample table in a state in which an O-ring is located on a contact portion between the sample table and the ring-shaped member, and
in a state in which the sample is sucked to the upper surface of the protruded portion of the sample table, the space portion sealed by the O-ring is filled with a cooling gas.
6. The plasma processing apparatus according to claim 1 , wherein
the sample table includes a level different portion which protrudes from a lower portion of the protruded portion and on which the ring-shaped member is mounted, and
a heater is provided inside a dielectric film formed on a surface of the level different portion.
7. The plasma processing apparatus according to claim 1 , further comprising:
a gas introduction portion communicating with the space portion through a gap between the ring-shaped member and the sample table, wherein
a cooling gas is introduced from the gas introduction portion.
8. The plasma processing apparatus according to claim 5 , further comprising:
a gas introduction portion communicating with a screw hole of the sample table into which the screw is inserted, wherein
the cooling gas is introduced from the gas introduction portion.
9. The plasma processing apparatus according to claim 1 , wherein
the ring-shaped member is composed of aluminum oxide, yttrium oxide, or quartz.
10. The plasma processing apparatus according to claim 1 , wherein
a surface roughness of the upper surface of the protruded portion of the sample table is between Ra 0.6 and Ra 1.0, and
a surface roughness of a sample support portion which is part of the ring-shaped member and which is in contact with the sample is Ra 0.4 or less.