IP Library Granted Patent US 10,979,043
Granted Patent B2
US 10,979,043 · App. 16/647,524 · Granted Apr 13, 2021

Switching element control circuit and power module

Inventors: Kenichi Suzuki (Saitama, JP); Wataru Miyazawa (Saitama, JP)
Assignee: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
H03K17/14H02M1/08
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 10,979,043
App. No.
16/647,524
Granted
Apr 13, 2021
Kind
B2
Abstract

A switching element control circuit includes a third electrode voltage control part which controls a third electrode voltage; a temperature detection part which detects an operation temperature of the switching element; a memory part which stores an initial threshold voltage, an initial temperature when the initial threshold voltage is measured, and a temperature characteristic of a threshold voltage; and a threshold voltage calculation part which calculates a threshold voltage at the time of operating the switching element based on information including the operation temperature of the switching element, the initial threshold voltage, and an initial temperature when the initial threshold voltage is measured, and information relating to a temperature characteristic of a threshold voltage, wherein the third electrode voltage control part controls the third electrode voltage based on a threshold voltage at the time of operating the switching element calculated by the threshold voltage calculation part.

Claims (67)

1. A switching element control circuit for controlling an ON/OFF operation of a switching element which includes a first electrode, a second electrode, and a third electrode, the switching element control circuit comprising:

a third electrode voltage control part which controls a third electrode voltage for controlling the ON/OFF operation of the switching element;

a temperature detection part which detects an operation temperature of the switching element;

a memory part which stores information including an initial threshold voltage of the switching element and an initial temperature of the switching element when the initial threshold voltage is measured, and information relating to a temperature characteristic of a threshold voltage of the switching element; and

a threshold voltage calculation part which calculates a threshold voltage at a time of operating the switching element based on information including the operation temperature of the switching element detected by the temperature detection part, the initial threshold voltage, and an initial temperature of the switching element when the initial threshold voltage is measured, and information relating to the temperature characteristic of a threshold voltage of the switching element, wherein

the third electrode voltage control part controls the third electrode voltage based on the threshold voltage at the time of operating the switching element calculated by the threshold voltage calculation part at the time of bringing the switching element into an ON state, and

the information relating to the temperature characteristic of the threshold voltage of the switching element is expressed by a characteristic formula which satisfies a relationship of Vth=Vth 0 −α(T−T 0 ) assuming that a temperature coefficient of the threshold voltage of the switching element is α, the threshold voltage at the time of operating the switching element is Vth, the initial threshold voltage is Vth 0 , the operation temperature of the switching element detected by the temperature detection part is T, and the initial temperature of the switching element when the initial threshold voltage is measured is T 0 .

2. The switching element control circuit according to claim 1 , wherein the information including the initial threshold voltage and the initial temperature of the switching element when the initial threshold voltage is measured, and the information relating to the temperature characteristic of the threshold voltage of the switching element are stored in the memory part in advance.

3. The switching element control circuit according to claim 1 , wherein the switching element is a MOSFET, IGBT or a HEMT.

4. The switching element control circuit according to claim 1 , wherein the switching element is formed using a material which contains GaN, SiC or Ga 2 O 3 .

5. A power module comprising:

a switching element provided with a first electrode, a second electrode, and a third electrode; and

the switching element control circuit according to claim 1 which controls an ON/OFF operation of the switching element.

6. A switching element control circuit for controlling an ON/OFF operation of a switching element which includes a first electrode, a second electrode, and a third electrode, the switching element control circuit comprising:

a third electrode voltage control part which controls a third electrode voltage for controlling the ON/OFF operation of the switching element;

a temperature detection part which detects an operation temperature of the switching element;

a memory part which stores information including an initial threshold voltage of the switching element and an initial temperature of the switching element when the initial threshold voltage is measured, and information relating to a temperature characteristic of a threshold voltage of the switching element; and

a threshold voltage calculation part which calculates a threshold voltage at a time of operating the switching element based on information including the operation temperature of the switching element detected by the temperature detection part, the initial threshold voltage, and an initial temperature of the switching element when the initial threshold voltage is measured, and information relating to the temperature characteristic of a threshold voltage of the switching element, wherein

the third electrode voltage control part controls the third electrode voltage based on the threshold voltage at the time of operating the switching element calculated by the threshold voltage calculation part at the time of bringing the switching element into an ON state,

the switching element control circuit performs an initial threshold voltage measurement mode where the initial threshold voltage of the switching element is measured, and a control mode where an ON/OFF operation of the switching element is controlled,

the switching element control circuit further comprises:

a threshold voltage measurement power source which supplies a threshold voltage measurement current to the first electrode of the switching element;

a first electrode current detection part which detects a first electrode current which flows through the switching element; and

an ON/OFF state determination part which determines an ON/OFF state of the switching element, and

in the initial threshold voltage measurement mode,

the third electrode voltage control part controls the third electrode voltage such that the third electrode voltage is increased in a stepwise manner, and

the ON/OFF state determination part determines whether or not the switching element is turned on based on the first electrode current detected by the first electrode current detection part, and

the memory part stores an operation temperature of the switching element and stores the third electrode voltage applied to the third electrode as the initial threshold voltage of the switching element when the ON/OFF state determination part determines that the switching element is brought into an ON state.

7. The switching element control circuit according to claim 6 , wherein

the switching element control circuit further performs a temperature characteristic measurement mode where a temperature characteristic of a threshold voltage of the switching element is measured after the control mode is performed for a predetermined time,

the switching element control circuit further comprises a temperature characteristic calculation part which calculates a temperature characteristic of a threshold voltage of the switching element, and

in the temperature characteristic measurement mode,

the third electrode voltage control part controls the third electrode voltage such that the third electrode voltage is increased in a stepwise manner,

the ON/OFF state determination part determines whether or not the switching element is turned on based on the first electrode current detected by the first electrode current detection part,

the memory part stores an operation temperature of the switching element and stores the third electrode voltage applied to the third electrode as a temperature characteristic measurement time threshold voltage of the switching element when the ON/OFF state determination part determines that the switching element is brought into an ON state, and

the temperature characteristic calculation part calculates the temperature characteristic of the threshold voltage of the switching element based on information including the initial threshold voltage, the initial temperature of the switching element when the initial threshold voltage is measured, the operation temperature of the switching element detected by the temperature detection part in the temperature characteristic measurement mode, and the temperature characteristic measurement time threshold voltage.

8. The switching element control circuit according to claim 6 , wherein the third electrode voltage control part controls the third electrode voltage such that the third electrode voltage is increased in a stepwise manner along with a lapse of time in the initial threshold voltage measurement mode.

9. The switching element control circuit according to claim 6 , wherein the third electrode voltage control part controls the third electrode voltage such that the third electrode voltage becomes a pulse-like voltage which is a pulse increasing an amplitude along with a lapse of time in the initial threshold voltage measurement mode.

10. The switching element control circuit according to claim 6 , wherein the switching element is a MOSFET, IGBT or a HEMT.

11. The switching element control circuit according to claim 6 , wherein the switching element is formed using a material which contains GaN, SiC or Ga 2 O 3 .

12. A power module comprising:

a switching element provided with a first electrode, a second electrode, and a third electrode; and

the switching element control circuit according to claim 6 which controls an ON/OFF operation of the switching element.

13. A switching element control circuit for controlling an ON/OFF operation of a switching element which includes a first electrode, a second electrode, and a third electrode, the switching element control circuit comprising:

a third electrode voltage control part which controls a third electrode voltage for controlling the ON/OFF operation of the switching element;

a temperature detection part which detects an operation temperature of the switching element;

a memory part which stores information including an initial threshold voltage of the switching element and an initial temperature of the switching element when the initial threshold voltage is measured, and information relating to a temperature characteristic of a threshold voltage of the switching element; and

a threshold voltage calculation part which calculates a threshold voltage at a time of operating the switching element based on information including the operation temperature of the switching element detected by the temperature detection part, the initial threshold voltage, and an initial temperature of the switching element when the initial threshold voltage is measured, and information relating to the temperature characteristic of a threshold voltage of the switching element, wherein

the third electrode voltage control part controls the third electrode voltage based on the threshold voltage at the time of operating the switching element calculated by the threshold voltage calculation part at the time of bringing the switching element into an ON state,

the switching element control circuit performs a temperature characteristic measurement mode where the temperature characteristic of the threshold voltage of the switching element is measured after a control mode where an ON/OFF operation of the switching element is controlled is performed for a predetermined time,

the switching element control circuit further comprises:

a threshold voltage measurement power source which supplies a threshold voltage measurement current to the first electrode of the switching element;

a first electrode current detection part which detects a first electrode current which flows through the switching element;

an ON/OFF state determination part which determines an ON/OFF state of the switching element; and

a temperature characteristic calculation part which calculates a temperature characteristic of a threshold voltage of the switching element, and

in the temperature characteristic measurement mode,

the third electrode voltage control part controls the third electrode voltage such that the third electrode voltage is increased in a stepwise manner,

the ON/OFF state determination part determines whether or not the switching element is turned on based on the first electrode current detected by the first electrode current detection part,

the memory part stores the third electrode voltage applied to the third electrode as a temperature characteristic measurement time threshold voltage of the switching element when the ON/OFF state determination part determines that the switching element is brought into an ON state, and

the temperature characteristic calculation part calculates the temperature characteristic of a threshold voltage of the switching element based on information including the initial threshold voltage, the initial temperature of the switching element when the initial threshold voltage is measured, the operation temperature of the switching element detected by the temperature detection part in the temperature characteristic measurement mode, and the temperature characteristic measurement time threshold voltage.

14. The switching element control circuit according to claim 13 , wherein the third electrode voltage control part controls the third electrode voltage such that the third electrode voltage is increased in a stepwise manner along with a lapse of time in the temperature characteristic measurement mode.

15. The switching element control circuit according to claim 13 , wherein the third electrode voltage control part controls the third electrode voltage such that the third electrode voltage becomes a pulse-like voltage which is a pulse increasing an amplitude along with a lapse of time in the temperature characteristic measurement mode.

16. The switching element control circuit according to claim 13 , wherein the switching element is a MOSFET, IGBT or a HEMT.

17. The switching element control circuit according to claim 13 , wherein the switching element is formed using a material which contains GaN, SiC or Ga 2 O 3 .

18. A power module comprising:

a switching element provided with a first electrode, a second electrode, and a third electrode; and

the switching element control circuit according to claim 13 which controls an ON/OFF operation of the switching element.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 26, 2020
From: SUZUKI, KENICHI; MIYAZAWA, WATARU
To: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
Reel/Frame 052754/0610 →
Continuity (1)
Related Publication 20200287532A1 · Sep 10, 2020