Titanium Sputtering Target, Production Method Therefor, And Method For Producing Titanium-Containing Thin Film
Provided is a titanium sputtering target having a recrystallized structure having an average crystal grain diameter of 1 μm or less. Also provided is a method for producing a titanium sputtering target, the method comprising the steps of: subjecting a cut titanium ingot to large strain processing to provide a processed sheet; subjecting the processed sheet to cold rolling at a rolling ratio of 30% or more to provide a rolled sheet; and subjecting the rolled sheet to a heat treatment at a temperature of 320° C. or less.
1 . A titanium sputtering target, comprising a recrystallized structure having an average crystal grain diameter of 1 μm or less, wherein the titanium sputtering target has a purity of 4N (99.99% by mass) or more.
2 . The titanium sputtering target according to claim 1 , wherein the titanium sputtering target has a Vickers hardness of 140 Hv or more.
3 . (canceled)
4 . A method for producing a titanium sputtering target, the method comprising the steps of:
subjecting a cut titanium ingot having a purity of 4N (99.99% by mass) or more to strain processing to provide a processed sheet having a total strain amount of 2 or more;
subjecting the processed sheet to cold rolling at a rolling ratio of 30% or more to provide a rolled sheet; and
subjecting the rolled sheet to a heat treatment at a temperature of 320° C. or less.
5 . The method for producing the titanium sputtering target according to claim 4 , wherein a processing temperature in the strain processing is 500° C. or less.
6 . The method for producing the titanium sputtering target according to claim 4 , wherein the strain processing is multidirectional forging.
7 . The method for producing the titanium sputtering target according to claim 4 , wherein a rolling ratio in the cold rolling is more than 70%.
8 . The method for producing the titanium sputtering target according to claim 4 , wherein a total strain amount of the processed sheet is more than 3.
9 . (canceled)
10 . A method for producing a titanium-containing thin film, the method comprising using the titanium sputtering target according to claim 1 as a sputtering source.
11 . The method for producing the titanium sputtering target according to claim 5 , wherein the strain processing is multidirectional forging.
12 . The method for producing the titanium sputtering target according to claim 5 , wherein a rolling ratio in the cold rolling is more than 70%.
13 . The method for producing the titanium sputtering target according to claim 6 , wherein a rolling ratio in the cold rolling is more than 70%.
14 . The method for producing the titanium sputtering target according to claim 11 , wherein a rolling ratio in the cold rolling is more than 70%.
15 . The method for producing the titanium sputtering target according to claim 5 , wherein a total strain amount of the processed sheet is more than 3.
16 . The method for producing the titanium sputtering target according to claim 6 , wherein a total strain amount of the processed sheet is more than 3.
17 . The method for producing the titanium sputtering target according to claim 7 , wherein a total strain amount of the processed sheet is more than 3.
18 . The method for producing the titanium sputtering target according to claim 11 , wherein a total strain amount of the processed sheet is more than 3.
19 . The method for producing the titanium sputtering target according to claim 12 wherein a total strain amount of the processed sheet is more than 3.
20 . The method for producing the titanium sputtering target according to claim 13 , wherein a total strain amount of the processed sheet is more than 3.
21 . The method for producing the titanium sputtering target according to claim 14 , wherein a total strain amount of the processed sheet is more than 3.
22 . A method for producing a titanium-containing thin film, the method comprising using the titanium sputtering target according to claim 2 as a sputtering source.