Image sensor comprising pixels for preventing or reducing the crosstalk effect
The present disclosure concerns an image sensor comprising a set of pixels, wherein each pixel of the set comprises a first and a second element, the first element comprising a photodiode module unit, and the second element being an element for filtering color and focusing incident light into said first element. The image sensor further comprises at least two consecutive pixels from the set of pixels, for which first elements are put side by side, and wherein the image sensor comprises a gap between second elements of said at least two consecutive pixels.
1. An image sensor comprising a set of pixels, wherein each pixel of the set comprises a first element and a second element, the first element comprising a photodiode module unit having a planar surface, and the second element being an element for filtering color and focusing incident light into the first element, and
wherein the image sensor comprises at least two consecutive pixels from the set of pixels, for which first elements are put side by side, and wherein the image sensor comprises a gap between second elements of the at least two consecutive pixels, and wherein each second element has a height that depends on which color is transmitted by the second element and dispersion properties of the material of the second element, wherein each second element extends away from the planar surface of the photodiode module unit by the height.
2. The image sensor according to claim 1 , wherein each second element is made of a dielectric material with a complex refractive index of the form of n+jk, which is wavelength dependent, where n is a real part of the complex refractive index of the second element and k is an imaginary part of the complex refractive index of the second element.
3. The image sensor according to claim 1 , wherein each second element substantially only transmits one color among red, green, and blue colors.
4. The image sensor according to claim 1 , wherein each first element is positioned on a planar layer.
5. The image sensor according to claim 1 , wherein each first element is positioned on a curved layer.
6. The image sensor according to claim 1 , wherein the gap has a size up to 700 nm.
7. The image sensor according to claim 1 , wherein each second element comprises a dielectric structure comprising color absorptive dyes that have dispersive properties in a wavelength of interest.
8. The image sensor according to claim 7 , wherein the dielectric structure has a shape selected from a group consisting of a cylinder, a cuboid, a prism, a truncated pyramid, and a truncated cone.
9. The image sensor according to claim 1 , wherein the width of the photodiode module unit is around 1000 nm, and the height of a second element is around h r =700 nm, when the second element substantially only transmits a red color, or is around h g =1300 nm when the second element substantially only transmits the green color or is around h b =1500 nm when the second element substantially only transmits a blue color, and wherein each second element is made of a dielectric material with a complex refractive index of the form of n+jk, a value of n and k being selected from the following table:
n (real part of the
k (imaginary part of
complex refractive
the complex refractive
index of a second element)
index of a second element)
1.4
0.009
1.27
0.053
1.4
0.073
1.72
0.185
1.65
0.004
1.53
0.079
1.63
0.265
1.82
0.158
1.7
0.028
4.61
0.185
4.08
0.110
3.78
0.095
2.04
0.
10. The image sensor according to claim 1 , wherein a width of a second element is between 700 nm and 850 nm.
11. The image sensor according to claim 1 , wherein the second elements of the at least two consecutive pixels are at least partially put side by side.
12. The image sensor according to claim 1 , wherein the height of each second element is based on absorption properties of light filtering material of the second element.
13. The image sensor according to claim 1 , wherein a width of the second elements affects an aperture size and focusing properties of the image sensor.
14. The image sensor according to claim 1 , wherein a width of the second element is optimized for a wavelength of which color is transmitted.
15. The image sensor according to claim 1 , wherein the gap between second elements of the at least two consecutive pixels prevents leakage of light through an optical stack in which the image sensor is disposed.
16. The image sensor according to claim 1 , wherein the gap between second elements of the at least two consecutive pixels and heights of the second elements are configured to reduce crosstalk effect.
17. An image sensor comprising a set of pixels, wherein each pixel of the set comprises a first element and a second element, the first element comprising a photodiode module unit having a planar surface, and the second element being an element for filtering color and focusing incident light into the first element; and
wherein the image sensor comprises at least two consecutive pixels from the set of pixels, for which first elements are put side by side, and wherein the image sensor comprises a gap between a first second element and a second second element of the at least two consecutive pixels, and wherein each second element has a height that depends on which color is transmitted by the second element and dispersion properties of the material of the second element, wherein each second element extends away from the planar surface of the photodiode module unit by the height, wherein the gap between second elements of the at least two consecutive pixels and heights of the second elements are configured to reduce crosstalk effect, wherein the first second element transmits a first color and the second second element transmits a second color different from the first color.
18. The image sensor according to claim 17 , wherein the gap between the first second element and the second second element of the at least two consecutive pixels prevents leakage of light through an optical stack in which the image sensor is disposed.