Sintered body, substrate, circuit board, and manufacturing method of sintered body
A sintered body includes a crystal grain containing silicon nitride, and a grain boundary phase. If dielectric losses of the sintered body are measured while applying an alternating voltage to the sintered body and continuously changing a frequency of the alternating voltage from 50 Hz to 1 MHz, an average value ε A of dielectric losses of the sintered body in a frequency band from 800 kHz to 1 MHz and an average value ε B of dielectric losses of the sintered body in a frequency band from 100 Hz to 200 Hz satisfy an expression |ε A −ε B |≤0.1.
1. A sintered body comprising:
a crystal grain containing silicon nitride, and
a grain boundary phase,
wherein the grain boundary phase includes glass compound phases provided in a region with a unit area of 100 μm×100 μm at a cross-section of the sintered body and having different compositions,
wherein at least one of Raman spectra of the glass compound phases has a first peak in a Raman shift range of 440 cm −1 to 530 cm −1 , and a second peak in a Raman shift range of 990 cm −1 to 1060 cm −1 , and
wherein, when dielectric losses of the sintered body are measured while applying an alternating voltage to the sintered body and continuously changing a frequency of the alternating voltage from 50 Hz to 1 MHz, an average value ε A of dielectric losses of the sintered body in a frequency band from 800 kHz to 1 MHz and an average value ε B of dielectric losses of the sintered body in a frequency band from 100 Hz to 200 Hz satisfy an expression |ε A −ε B |≤0.1.
2. The sintered body according to claim 1 , wherein each of the average value ε A and the average value ε B is 0.1 or less.
3. The sintered body according to claim 1 , wherein a ratio of a first largest area S M1 to a second largest area S M2 of areas of the Raman spectra of the glass compound phases is 1.1 or more and 3.0 or less.
4. The sintered body according to claim 1 , wherein the grain boundary phase contains fluorine.
5. The sintered body according to claim 1 , wherein thermal conductivity of the sintered body is 50 W/m·K or more.
6. A substrate comprising the sintered body according to claim 1 .
7. The substrate according to claim 6 , wherein a thickness of the substrate is 0.4 mm or less.
8. A circuit board comprising:
the substrate according to claim 6 ; and
a metal plate bonded to the substrate.
9. A method of manufacturing a sintered body according to claim 1 , comprising:
mixing silicon nitride powder, a surface modification agent, a polymer binder, and an organic compound in a solvent to form a mixed solution, the polymer binder having a first functional group and a first mean molecular weight, the organic compound having a second functional group as same as the first functional group and a second mean molecular weight smaller than the first mean molecular weight;
adding sintering aid powder into the mixed solution to form a raw material solution;
defoaming the raw material solution to form a raw material slurry;
molding the raw material slurry to form a sheet;
heating the sheet at a temperature of 1000° C. or less to form a degreased body; and
sintering the degreased body at a temperature of 1600° C. or more and 2000° C. or less.
10. The method according to claim 9 , wherein the organic compound is configured to react with the surface modification agent at a temperature less than or equal to a thermal decomposition temperature of the polymer binder.
11. The method according to claim 9 , wherein the surface modification agent is a silane coupling agent.
12. The method according to claim 9 , wherein the polymer binder is an acrylic resin.
13. The method according to claim 9 , wherein the organic compound has a carboxyl group.