MEMs frame heating platform for electron imagable fluid reservoirs or larger conductive samples
A heating device having a heating element patterned into a robust MEMs substrate, wherein the heating element is electrically isolated from a fluid reservoir or bulk conductive sample, but close enough in proximity to an imagable window/area having the fluid or sample thereon, such that the sample is heated through conduction. The heating device can be used in a microscope sample holder, e.g., for SEM, TEM, STEM, X-ray synchrotron, scanning probe microscopy, and optical microscopy.
1. A microscopy sample support device comprising:
(a) a thermally conductive frame with a first side and a second side opposite the first side;
(b) an observation region on a planar surface of the first side of the thermally conductive frame; and
(c) at least one heat source element located across the second side of the thermally conductive frame,
wherein the at least one heat source element is electrically insulated from the thermally conductive frame by a first dielectric layer positioned therebetween.
2. The device of claim 1 , wherein the thermally conductive frame has a thickness between 100 micrometers and 1000 micrometers.
3. The device of claim 1 , wherein the first side and the second side of the thermally conductive frame are substantially parallel.
4. The device of claim 1 , wherein the at least one heat source element comprises at least one material selected from the group consisting of tungsten, platinum, tantalum, rhenium, molybdenum, titanium, nichrome, kanthal, cupronickel, polysilicon, silicide, silicon carbide, titanium carbide, molybdenum disilicide, molybdenum carbide, tungsten carbide, tungsten nitride, tantalum nitride, boron nitride, FeCrAl, NiCr, titanium silicide, tantalum silicide, cobalt silicide, titanium nitride, and aluminum nitride.
5. The device of claim 1 , wherein the microscopy sample support device is configured for electron microscopy.
6. The device of claim 1 , further comprising a second dielectric layer covering a portion of the heat source element.
7. The device of claim 6 , wherein the heat source element comprises at least two exposed electrical contacts by which the heat source element can be connected to a source of electricity.
8. The device of claim 7 , wherein the exposed electrical contacts each comprise a coating, the coating comprising at least one of solder, nickel, gold, and anti-corrosive material.
9. The device of claim 6 , wherein the heat source element comprises at least two exposed areas connected to an impedance measurement device.
10. The device of claim 9 , wherein a temperature change of the device is determined from impedance measurements taken by the impedance measurement device.
11. A sample support for heating microscopy samples, the sample support comprising:
a MEMS frame with a top surface and a bottom surface;
a first layer over the top surface comprising a first dielectric layer atop the MEMS frame;
a second layer over the top surface comprising at least one heat source element; and
a third layer over the top surface comprising a second dielectric layer atop the heat source element.
12. The sample support of claim 11 , wherein the MEMS frame has a thickness between 100 micrometers and 1000 micrometers.
13. The sample support of claim 11 , wherein the second dielectric layer partially covers the heat source element such that at least two areas of the heat source element are exposed.
14. The sample support of claim 13 , wherein the two exposed areas of the heat source element are connected to a source of electricity.
15. The sample support of claim 13 , wherein the two exposed areas of the heat source element are connected to an impedance measurement device.
16. The sample support of claim 15 , wherein a temperature change of the sample support is determined from impedance measurements taken by the impedance measurement device.
17. The sample support of claim 13 , wherein the two exposed areas of the heat source element each comprise a coating, the coating comprising at least one of solder, nickel, gold, and anti-corrosive material.
18. The sample support of claim 11 , wherein the at least one heat source element comprises at least one material selected from the group consisting of tungsten, platinum, tantalum, rhenium, molybdenum, titanium, nichrome, kanthal, cupronickel, silicon carbide, titanium carbide, molybdenum disilicide, molybdenum carbide, tungsten carbide, tungsten nitride, tantalum nitride, boron nitride, FeCrAl, NiCr, titanium silicide, tantalum silicide, cobalt silicide, titanium nitride, and aluminum nitride.
19. The sample support of claim 11 , wherein the top surface comprises a sample observation region.
20. The sample support of claim 11 , wherein the bottom surface comprises a sample observation region.