Acoustic wave devices

1. An acoustic wave device comprising:

a quartz substrate including a first surface;

a piezoelectric plate formed from LiTaO 3 or LiNbO 3 and including a first surface configured to support a surface acoustic wave and a second surface in direct engagement with the first surface of the quartz substrate, the second surface being a minus surface resulting from crystal structure orientation of the piezoelectric plate; and

an interdigital transducer electrode formed on the first surface of the piezoelectric plate and configured to provide transducer functionality associated with the surface acoustic wave.

2. The acoustic wave device of claim 1 wherein the crystal structure orientation of the piezoelectric plate includes Euler angles (0°, 90°<θ<270°, 0°).

3. The acoustic wave device of claim 2 wherein the first surface of the quartz substrate is a plus surface resulting from crystal structure orientation of the quartz substrate.

4. The acoustic wave device of claim 3 wherein the crystal structure orientation of the quartz substrate includes Euler angles (φ, 90°<θ<270°, ψ), the angle φ having a value in a range of 0°≤φ<180°, the angle ψ having a value in a range of 0°≤ψ<180°.

5. The acoustic wave device of claim 2 wherein the first surface of the quartz substrate is a minus surface resulting from crystal structure orientation of the quartz substrate.

6. The acoustic wave device of claim 5 wherein the crystal structure orientation of the quartz substrate includes Euler angles (φ, −90°<θ<90°, ψ), the angle φ having a value in a range of 0°≤φ<180°, the angle ψ having a value in a range of 0°≤ψ<180°.

7. The acoustic wave device of claim 2 wherein the first surface of the quartz substrate is an unpolarized surface resulting from crystal structure orientation of the quartz substrate.

8. The acoustic wave device of claim 7 wherein the crystal structure orientation of the quartz substrate includes Euler angles (φ, 90°, ψ) or (φ, −90°, ψ), the angle φ having a value in a range of 0°≤φ<180°, the angle ψ having a value in a range of 0°≤ψ<180°.

9. The acoustic wave device of claim 8 wherein the angle φ has a value of 90° and the angle ψ has a value of 90°.

10. The acoustic wave device of claim 1 wherein the piezoelectric plate is formed from LiTaO 3 and the quartz substrate includes Euler angles (0°, 10°-80°, 0°), (0°, 100°-170°, 0°), (0°, 190°-260°, 0°) or (0°, 280°-350°, 0°).

11. The acoustic wave device of claim 1 wherein the piezoelectric plate is formed from LiNbO 3 and the quartz substrate includes Euler angles (0°, 5°-85°, 0°), (0°, 95°-175°, 0°), (0°, 185°-265°, 0°) or (0°, 275°-355°, 0°).

12. The acoustic wave device of claim 1 wherein the piezoelectric plate is formed from LiTaO 3 and the quartz substrate includes Euler angles (0°, 5°-53°, 90°), (0°, 127°-175°, 90°), (0°, 185°-233°, 90°) or (0°, 307°-355°, 90°).

13. The acoustic wave device of claim 1 wherein the piezoelectric plate is formed from LiNbO 3 and the quartz substrate includes Euler angles (0°, 0°-52°, 90°), (0°, 126°-180°, 90°), (0°, 180°-232°, 90°) or (0°, 306°-360°, 90°).

14. The acoustic wave device of claim 1 wherein the piezoelectric plate is formed from LiTaO 3 or LiNbO 3 and the quartz substrate includes Euler angles (0°, 0°-360°, 0°-60°) or (0°, 0°-360°, 120°-180°).

15. The acoustic wave device of claim 14 wherein the piezoelectric plate is formed from LiTaO 3 or LiNbO 3 and the quartz substrate includes Euler angles (0°, 0°-360°, 0°-45°) or (0°, 0°-360°, 135°-180°).

16. The acoustic wave device of claim 1 further comprising first and second reflectors implemented on the first surface of the piezoelectric plate and positioned on first and second sides of the interdigital transducer electrode.

17. The acoustic wave device of claim 1 wherein thickness of the piezoelectric plate is in a range of 0.04λ to 1.5λ, the quantity λ being wavelength of the surface acoustic wave.

18. A method for fabricating an acoustic wave device, the method comprising:

forming or providing a quartz substrate having a first surface;

forming or providing a piezoelectric plate with LiTaO 3 or LiNbO 3 to include a first surface configured to support a surface acoustic wave and a second surface being a minus surface resulting from crystal structure orientation of the piezoelectric plate; and

coupling the piezoelectric plate with the quartz substrate such that the minus surface of the piezoelectric plate directly engages the first surface of the quartz substrate.

19. A radio-frequency filter comprising:

an input node for receiving a signal;

an output node for providing a filtered signal; and

an acoustic wave device implemented to be electrically between the input node and the output node to generate the filtered signal, the acoustic wave device including a quartz substrate with a first surface, and a piezoelectric plate formed from LiTaO 3 or LiNbO 3 and having a first surface configured to support a surface acoustic wave and a second surface in direct engagement with the first surface of the quartz substrate, the second surface being a minus surface resulting from crystal structure orientation of the piezoelectric plate.

20. The radio-frequency filter of claim 19 further comprising first and second interdigital transducer electrodes formed on the first surface of the piezoelectric plate, the first interdigital transducer electrode electrically connected to the input node and the second interdigital transducer electrode electrically connected to the output node.