Semiconductor memory device
A semiconductor device according to an embodiment includes two semiconductor pillars, a connection member connected between the two semiconductor pillars, and a contact connected to the connection member. There is not a conductive member disposed between the two semiconductor pillars.
1. A semiconductor memory device comprising:
a first semiconductor pillar extending in a first direction;
a second semiconductor pillar extending in the first direction, the first semiconductor pillar and the second semiconductor pillar being arranged in a second direction intersecting the first direction;
a first electrode film extending in a third direction intersecting the first direction and the second direction;
a second electrode film extending in the third direction, the first electrode film and the second electrode film being arranged in the second direction;
a first memory portion provided between the first semiconductor pillar and the first electrode film;
a second memory portion provided between the second semiconductor pillar and the second electrode film;
a first connection member being electrically connected in common to an upper portion of the first semiconductor pillar and an upper portion of the second semiconductor pillar;
a first contact, a lower portion of the first contact being electrically connected to the first connection member; and
a first upper interconnect extending in the second direction and electrically connected to an upper portion of the first contact.