Multi-sensor optical device for detecting chemical species and manufacturing method thereof

1. A device, comprising:

a substrate with a first surface and a second surface facing away from the first surface;

an epitaxial layer on the first surface of the substrate, the epitaxial layer having plurality of edges, a third surface with a first perimeter, and a fourth surface with a second perimeter, the third surface is closer to the first surface of the substrate than the fourth surface;

a first anode region on the third surface of the epitaxial layer and positioned within the first perimeter, the first anode region spaced from the plurality of edges of the epitaxial layer;

a second anode region on the fourth surface of the epitaxial layer and positioned within second perimeter, the second anode region spaced from the plurality of edges of the epitaxial layer;

a first anode metallization on the first anode region; and

a second anode metallization on the second anode region.

2. The device of claim 1 , further comprising a contact layer on the second surface of the substrate.

3. The device of claim 2 , further comprising a cathode layer on the contact layer.

4. The device of claim 1 , wherein the epitaxial layer further comprises a wall extending from the third surface to the fourth surface, the wall positioned between the first anode region and the second anode region.

5. The device of claim 4 , wherein:

the first perimeter includes a plurality of first sides aligned with respective edges of the plurality of edges and a second side aligned with the wall; and

the second perimeter includes a plurality of first sides aligned with respective edges of the plurality of edges and a second side aligned with the wall.

6. The device of claim 1 , further comprises an absorption layer on the second anode region.

7. The device of claim 1 , wherein:

the first anode metallization is positioned adjacent to a center of an edge of the first anode region; and

the second anode metallization is positioned adjacent to a center of an edge of the second anode region.

8. A device, comprising:

a substrate with a first surface and a second surface facing away from the first surface;

an epitaxial layer on the first surface of the substrate, the epitaxial layer having a third surface, a fourth surface, and fifth surface, the third surface and the fourth surface face away from the first surface of the substrate, the fifth surface of the epitaxial layer extends from the third surface to the fourth surface and extends from the third surface to the fourth surface;

a first optoelectronic sensor on the third surface of the epitaxial layer; and

a second optoelectronic sensor on the fourth surface of the epitaxial layer.

9. The device of claim 8 , wherein the fifth surface is positioned between the first optoelectronic sensor and the second optoelectronic sensor.

10. The device of claim 8 , wherein the fifth surface separates the third surface from the fourth surface.

11. The device of claim 8 , further comprising:

a contact layer on the second surface of the substrate; and

a cathode metallization layer on the contact layer, the cathode metallization layer is electrically coupled to the first anode region and the second anode region.

12. The device of claim 8 , wherein the first optoelectronic sensor further comprises:

an anode region on the third surface of the epitaxial layer; and

an anode metallization on the anode region.

13. The device of claim 12 , wherein the anode metallization on the anode region is positioned adjacent to a center of an edge of the anode region.

14. The device of claim 8 , wherein the second optoelectronic sensor further comprises:

an anode region on the fourth surface of the epitaxial layer;

an anode metallization on the anode region; and

an absorption layer on the anode region that abuts the anode metallization.

15. The device of claim 14 , wherein the anode metallization on the anode region is positioned adjacent to a center of an edge of the anode region.

16. A method, comprising:

forming an epitaxial layer with a first portion with a first thickness and a second portion with a second thickness greater than the first thickness on a first surface of a substrate;

forming a contact layer on a second surface of the substrate facing away from the first surface of the substrate;

forming a first anode region on the first portion of the epitaxial layer and a second anode region on the second portion of the epitaxial layer;

forming a first anode metallization on the first anode region and a second anode metallization on the second anode region; and

forming a cathode layer on the contact layer.

17. The method of claim 16 , wherein forming the epitaxial layer with the first portion with the first thickness and the second portion with the second thickness further comprises:

forming an oxide layer on the epitaxial layer;

forming a mask layer on the oxide layer;

removing a portion of the oxide layer from a location on the epitaxial layer;

etching the epitaxial layer at the location forming the first portion of the epitaxial layer with the first thickness, the second portion with the second thickness, and a wall that extends from a surface of the first portion to a surface of the second portion; and

removing the mask layer and the oxide layer aligned with the second portion of the epitaxial layer.

18. The method of claim 16 , wherein forming the first anode region and the second anode region further comprises:

forming an oxide layer on the first portion of the first epitaxial layer and the second portion of the second epitaxial layer;

forming a mask layer on the oxide layer;

removing portions of the mask layer to expose portion of the oxide layer;

exposing the exposed portions of the oxide layer to ions; and

removing the mask layer and the oxide layer.

19. The method of claim 16 , further comprising forming an absorption layer on the second anode region including:

forming a polysilicon layer on the first portion and the second portion of the epitaxial layer;

forming a mask layer on the polysilicon layer, the mask layer is aligned with the second anode region;

etching the polysilicon layer forming the absorption layer on the second anode region, the absorption layer covering a first portion of the second anode region and exposing a second portion of the second anode region; and

removing the mask layer.

20. The method of claim 19 , wherein forming the second metallization on the second anode region further comprises:

forming the second metallization on the second portion of the second anode region that is exposed.