Method of making radiation detector
View Patent ↗Disclosed herein is a method for making a radiation detector. The method comprises forming a recess into a substrate and forming a semiconductor single crystal in the recess. The semiconductor single crystal may be a cadmium zinc telluride (CdZnTe) single crystal or a cadmium telluride (CdTe) single crystal. The method further comprises forming electrical contacts on the semi conductor single crystal and bonding the substrate to another substrate comprising an electronic system therein or thereon. The electronic system is connected to the electrical contact of the semiconductor single crystal and configured to process an electrical signal generated by the semiconductor single crystal upon absorption of radiation particles.
1. A method comprising:
forming recesses into a substrate;
forming semiconductors respectively in the recesses, wherein the semiconductors have different chemical composition from the substrate;
forming first electrical contacts on a first surface of the semiconductors, wherein the first surface is not in direct contact with the substrate;
bonding the substrate to another substrate comprising electronic systems therein or thereon, wherein the electronic systems are respectively connected to the first electrical contacts and configured to respectively process electrical signals from the first electrical contacts;
determining whether the semiconductors are single-crystalline using the electronic systems;
deactivating only the electronic systems connected to the first electrical contacts on those of the semiconductors that are not single crystalline, without detaching the electronic systems therefrom.
2. The method of claim 1 , wherein the semiconductors are cadmium zinc telluride (CdZnTe) or cadmium telluride (CdTe).
3. The method of claim 1 , wherein the substrate comprises silicon, germanium, GaAs or a combination thereof.
4. The method of claim 1 , wherein the recesses have a shape of a frustum, prism, pyramid, cuboid, cubic or cylinder.
5. The method of claim 1 , wherein forming the recesses comprises forming a mask on the substrate and etching portions of the substrate uncovered by the mask.
6. The method of claim 5 , wherein the mask comprises a metal, silicon nitride, silicon dioxide, or carbon.
7. The method of claim 5 , wherein etching the portions is done by wet etching, dry etching or a combination thereof.
8. The method of claim 1 , further comprising polishing the substrate such that the first surface of the semiconductors and a surface of the substrate are coextensive.
9. The method of claim 1 , wherein the substrate is electrically conductive, wherein the substrate is in electrical contact with the semiconductors.
10. The method of claim 1 , further comprising forming second electrical contacts by doping a layer of the substrate from a surface of the substrate, wherein the second electrical contacts are respectively in electrical contact with the semiconductors.
11. The method of claim 1 , further comprising forming second electrical contacts by depositing a layer of conductive material in interior of the recesses before forming the semiconductors.
12. The method of claim 1 , further comprising forming second electrical contacts by polishing a surface of the substrate to expose a second surface of the semiconductors and depositing a layer of conductive material onto the second surface of the semiconductors.