Light emitting device and light emitting device package

1. A light emitting device, comprising:

a light emitting structure including a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer;

an electrode layer including an indium tin oxide (ITO) on the second conductive type semiconductor layer;

an insulating layer on the second conductive type semiconductor layer;

a first electrode on the first conductive type semiconductor layer; and

a second electrode on the second conductive type semiconductor layer,

wherein the insulating layer includes a first surface, a side surface, and a second surface;

wherein the first surface of the insulating layer directly contacts a first portion of a top surface of the second conductive type semiconductor layer;

wherein the second surface of the insulating layer is opposite to the first surface of the insulating layer;

wherein the electrode layer comprising a first portion, a step portion, and a hole exposing at least a portion of the second conductive semiconductor layer, such that a bottom surface of the second electrode disposed within the hole directly contacts a second portion of the top surface of the second conductive type semiconductor layer, and an entire side surface of the second electrode disposed within the hole is in direct contact with the electrode layer; and

wherein the step portion of the electrode layer directly contacts the side surface of the insulating layer and the entire second surface of the insulating layer.

2. The light emitting device of claim 1 , wherein the first portion of the electrode layer directly contacts the entire side surface of the second electrode disposed within the hole, and wherein a portion of the second electrode, a portion of the first portion of the electrode layer, and the side surface of the insulating layer are horizontally overlapped.

3. The light emitting device of claim 1 , wherein an edge of the bottom surface of the second electrode disposed within the hole directly contacts an edge of a bottom surface of the electrode layer.

4. The light emitting device of claim 3 , wherein the bottom surface of the electrode layer is flush with the first surface of the insulating layer.

5. The light emitting device of claim 1 , wherein the insulating layer comprises at least one of SiO 2 , SiO x , SiO x N y , Si 3 N 4 , TiO 2 , or Al 2 O 3 .

6. The light emitting device of claim 1 , wherein the second electrode has a multiple layer structure including at least one selected from the group consisting of Au, Al, Ag, Ti, Cu, Ni, and Cr.

7. The light emitting device of claim 6 , wherein the second electrode includes Al, Ti, and Cr.

8. The light emitting device of claim 1 , wherein a width of an upper portion of the second electrode is wider than a width of a lower portion of the second electrode.

9. A light emitting device, comprising:

a light emitting structure including a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer;

an electrode layer including a transmissive conductive material having an oxygen on the second conductive type semiconductor layer;

an insulating layer on the second conductive type semiconductor layer;

a first electrode on the first conductive type semiconductor layer; and

a second electrode on the second conductive type semiconductor layer,

wherein the insulating layer includes a first surface, a side surface, and a second surface;

wherein the first surface of the insulating layer directly contacts a first portion of a top surface of the second conductive type semiconductor layer;

wherein the second surface of the insulating layer is opposite to the first surface of the insulating layer;

wherein the electrode layer comprising a first portion and a hole exposing at least a portion of the second conductive semiconductor layer;

wherein the first portion of the electrode layer directly contacts an entire side surface of the second electrode disposed within the hole;

wherein a bottom surface of the second electrode disposed within the hole directly contacts a second portion of the top surface of the second conductive type semiconductor layer;

wherein a bottom surface of the first portion of the electrode layer is flush with the bottom surface of the second electrode

wherein the electrode layer directly contacts the second surface of the insulating layer.

10. The light emitting device of claim 9 , wherein the electrode layer comprises a single layer structure or a multiple layer structure including at least one selected from the group consisting of ITO (indium tin oxide), IZO (indium zinc oxide), IZTO (indium zinc tin oxide), IAZO (indium aluminum zinc oxide), IGZO (indium gallium zinc oxide), IGTO (indium gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), IrO x , and RuO x .

11. The light emitting device of claim 9 , wherein a portion of the second electrode, a portion of the first portion of the electrode layer, and the side surface of the insulating layer are horizontally overlapped.

12. The light emitting device of claim 9 , wherein an edge of the bottom surface of the second electrode disposed within the hole directly contacts an edge of a bottom surface of the electrode layer.

13. The light emitting device of claim 9 , wherein the insulating layer comprises at least one of SiO 2 , SiO x , SiO x N y , Si 3 N 4 , TiO 2 , or Al 2 O 3 .

14. The light emitting device of claim 9 , wherein the second electrode has a multiple layer structure including at least one selected from the group consisting of Au, Al, Ag, Ti, Cu, Ni, and Cr.

15. The light emitting device of claim 14 , wherein the second electrode includes Al, Ti, and Cr.

16. The light emitting device of claim 9 , wherein a width of an upper portion of the second electrode is wider than a width of a lower portion of the second electrode.

17. A light emitting device, comprising:

a light emitting structure including a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer;

an electrode layer including a transmissive conductive material having an oxygen on the second conductive type semiconductor layer;

an insulating layer on the second conductive type semiconductor layer;

a first electrode on the first conductive type semiconductor layer; and

a second electrode on the second conductive type semiconductor layer,

wherein the insulating layer includes a first surface, a side surface, and a second surface;

wherein the first surface of the insulating layer directly contacts a first portion of a top surface of the second conductive type semiconductor layer;

wherein the second surface of the insulating layer is opposite to the first surface of the insulating layer;

wherein the electrode layer comprising a first portion, a step portion, and a hole exposing at least a portion of the second conductive semiconductor layer;

wherein the first portion of the electrode layer directly contacts an entire side surface of the second electrode disposed within the hole;

wherein a bottom surface of the second electrode disposed within the hole directly contacts a second portion of the top surface of the second conductive type semiconductor layer;

wherein the step portion of the electrode layer extends from the side surface of the insulating layer to the second surface of the insulating layer, and covers the entire second surface of the insulating layer; and

wherein a top surface of the first portion of the electrode layer is higher than a top surface of the step portion.

18. The light emitting device of claim 17 , wherein the electrode layer comprises a single layer structure or a multiple layer structure including at least one selected from the group consisting of ITO (indium tin oxide), IZO (indium zinc oxide), IZTO (indium zinc tin oxide), IAZO (indium aluminum zinc oxide), IGZO (indium gallium zinc oxide), IGTO (indium gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), IrO x , and RuO x .

19. The light emitting device of claim 17 , wherein a portion of the second electrode, a portion of the first portion of the electrode layer, and the side surface of the insulating layer are horizontally overlapped.

20. The light emitting device of claim 17 , wherein an edge of the bottom surface of the second electrode disposed within the hole directly contacts an edge of a bottom surface of the electrode layer.

21. The light emitting device of claim 17 , wherein the insulating layer comprises at least one of SiO 2 , SiO x , SiO x N y , Si 3 N 4 , TiO 2 , or Al 2 O 3 .

22. The light emitting device of claim 17 , wherein the second electrode has a multiple layer structure including at least one selected from the group consisting of Au, Al, Ag, Ti, Cu, Ni, and Cr.

23. The light emitting device of claim 17 , wherein a width of an upper portion of the second electrode is wider than a width of a lower portion of the second electrode.

24. A light emitting device, comprising:

a light emitting structure including a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer;

an electrode layer on the second conductive type semiconductor layer;

an insulating layer on the second conductive type semiconductor layer;

a first electrode on the first conductive type semiconductor layer; and

a second electrode on the second conductive type semiconductor layer,

wherein the insulating layer includes a first surface, a side surface, and a second surface;

wherein the first surface of the insulating layer directly contacts a first portion of a top surface of the second conductive type semiconductor layer;

wherein the second surface of the insulating layer is opposite to the first surface of the insulating layer;

wherein the electrode layer comprising a first portion, a second portion, a step portion connecting the first portion and the second portion, and a hole exposing at least a portion of the second conductive semiconductor layer, such that a bottom surface of the second electrode disposed within the hole directly contacts a second portion of the top surface of the second conductive type semiconductor layer, an entire side surface of the second electrode disposed within the hole is in direct contact with the electrode layer, and an upper portion of the second electrode is disposed above a top surface of the electrode layer; and

wherein the step portion of the electrode layer directly contacts the side surface of the insulating layer and the second portion of the electrode layers contacts the entire second surface of the insulating layer.

25. The light emitting device of claim 24 , wherein the electrode layer includes indium tin oxide (ITO).

26. The light emitting device of claim 24 , wherein the insulating layer comprises SiO 2 .

27. The light emitting device of claim 24 , wherein the second electrode includes Al, Ti, and Cr.

28. The light emitting device of claim 24 , wherein a width of the upper portion of the second electrode disposed above the top surface of the electrode layer is wider than a width of a lower portion of the second electrode disposed within the hole.