Methods for etching a structure for semiconductor applications
Embodiments of the present disclosure provide methods and apparatus for forming and patterning features in a film stack disposed on a substrate. In one embodiment, a method for patterning a conductive layer on a substrate includes supplying a gas mixture comprising a chlorine containing gas at a first flow rate to etch a first conductive layer disposed on the substrate, lowing the chlorine containing gas in the first gas mixture to a second flow rate lower than the first flow rate to continue etching the first conductive layer, and increasing the chlorine containing gas in the first gas mixture to a third flow rate greater than the second flow rate to remove the first conductive layer from the substrate.
1. A method for patterning a conductive layer on a substrate, comprising:
supplying a gas mixture comprising a chlorine containing gas at a first flow rate to etch a first conductive layer disposed on the substrate;
lowering the chlorine containing gas in the first gas mixture to a second flow rate lower than the first flow rate to continue etching the first conductive layer; and
increasing the chlorine containing gas in the first gas mixture to a third flow rate greater than the second flow rate to remove the first conductive layer from the substrate.
2. The method of claim 1 , wherein the first conductive layer is a Ti or Ta containing layer.
3. The method of claim 1 , wherein the first gas mixture further comprises an inert gas.
4. The method of claim 1 , wherein the chlorine containing gas is Cl 2 or HCl.
5. The method of claim 1 , wherein the first flow rate is the same or similar to the third flow rate.
6. The method of claim 1 , further comprising:
performing a hydrogen treatment process prior to etch the first conductive layer.
7. The method of claim 6 , further comprising:
maintaining a substrate temperature at greater than 150 degrees Celsius while performing the hydrogen treatment process.
8. The method of claim 7 , wherein the substrate temperature between about 200 degrees Celsius and about 300 degrees Celsius.
9. The method of claim 1 , further comprising:
performing a post annealing process to the substrate after the first conductive layer is removed from the substrate.
10. The method of claim 9 , wherein the post annealing process further comprises:
maintaining a process pressure between about 5 bar and 100 bar.
11. The method of claim 10 , further comprising:
supplying an annealing gas mixture including a hydrogen containing gas or a nitrogen containing gas while performing the post annealing process.
12. The method of claim 9 , wherein the post annealing process densifies a second conductive layer exposed on the substrate.
13. The method of claim 12 , wherein the second material containing layer is a Ru containing material.
14. The method of claim 1 , wherein the gas mixture supplied at the first flow rate removes an oxide material from the metal containing material.
15. The method of claim 1 , wherein the gas mixture supplied at the second flow rate removes between about 5% and about 95% of the first conductive layer.
16. A method for patterning a conductive layer on a substrate, comprising:
performing a hydrogen treatment process on a substrate to remove residuals on the substrate wherein the treatment process is performed at temperatures exceeding 100 degrees Celsius to remove residual material from a first conductive layer;
performing an etching process by supplying an etching gas mixture comprising chlorine containing gas to etch a first conductive layer on the substrate until a second conductive layer is exposed on the substrate; and
performing a post annealing process at a process pressure between about 5 bar and 100 bar.
17. The method of claim 16 , wherein performing the etching process further comprising:
maintaining the chlorine containing gas in the etching gas mixture from a first flow rate to a second flow rate and further to a third flow rate while etching the first conductive layer.
18. The method of claim 17 , wherein the first flow rate is greater than the second flow rate.
19. The method of claim 16 , wherein the first conductive layer is a Ta or Ti containing layer and the second conductive layer is a Ru containing layer.
20. A method for patterning a conductive layer on a substrate, comprising:
removing residuals from on a substrate by a hydrogen treatment process, wherein the residuals comprises organic material, wherein the substrate comprises having a first conductive layer disposed on a second conductive layer,
etching the first conductive layer by supplying an etching gas mixture comprising chlorine containing gas until a second conductive layer is exposed on the substrate, wherein the chlorine containing gas in the etching gas mixture is maintained from a first flow rate to a second flow rate and further to a third flow rate while etching the first conductive layer; and
performing a post annealing process at a process pressure between about 5 bar and 100 bar to thermally treat the second conductive layer on the substrate.