Reflective mask and fabricating method thereof

1. A method, comprising:

forming a light absorbing layer over a substrate;

forming a reflective layer over the light absorbing layer;

forming an absorption pattern over the reflective layer; and

etching an opening in the reflective layer to expose a portion of the light absorbing layer.

2. The method of claim 1 , further comprising:

roughening the exposed portion of the light absorbing layer.

3. The method of claim 2 , further comprising:

forming a mask layer over the reflective layer;

patterning the mask layer, wherein etching the opening in the reflective layer is performed using the patterned mask layer as an etch mask; and

removing the patterned mask layer after roughening the exposed portion of the light absorbing layer.

4. The method of claim 1 , further comprising:

filling the opening with a filling material.

5. The method of claim 1 , wherein forming the absorption pattern over the reflective layer comprises:

forming an absorption layer over the reflective layer; and

etching the absorption layer to form the absorption pattern over the reflective layer, wherein etching the absorption layer to form the absorption pattern over the reflective layer is performed prior to etching the opening in the reflective layer.

6. The method of claim 1 , wherein forming the absorption pattern over the reflective layer comprises:

forming an absorption layer over the reflective layer; and

etching the absorption layer to form the absorption pattern over the reflective layer, wherein etching the absorption layer to form the absorption pattern over the reflective layer is performed after etching the opening in the reflective layer.

7. A method, comprising:

forming a light absorbing layer over a substrate;

forming a reflective layer over the light absorbing layer;

forming an absorption pattern over the reflective layer;

etching an opening in the reflective layer such that a first portion of the light absorbing layer is covered by the reflective layer and a second portion of the light absorbing layer is exposed through the opening; and

performing a roughening treatment on the light absorbing layer such that a roughness of the second portion of the light absorbing layer is higher than a roughness of the first portion of the light absorbing layer.

8. The method of claim 7 , wherein the absorption pattern is formed prior to etching the opening in the reflective layer.

9. The method of claim 7 , further comprising:

filling the opening with a filling material; and

performing a first baking process to cure the filling material.

10. The method of claim 9 , further comprising:

performing a second baking process to dry the filling material.

11. The method of claim 9 , wherein filling the opening with the filling material is performed such that a top surface of the filling material is higher than a topmost surface of the reflective layer.

12. The method of claim 7 , wherein the light absorbing layer has a first thermal conductivity in a first direction substantially parallel to a top surface of the substrate and a second thermal conductivity in a second direction substantially perpendicular to the top surface of the substrate, and the first thermal conductivity is higher than the second thermal conductivity.

13. The method of claim 7 , further comprising:

polishing the light absorbing layer prior to forming the reflective layer.

14. A method of forming a reflective mask, comprising:

forming a light absorbing layer over a substrate, wherein the light absorbing layer is in contact with the substrate;

forming a reflective layer over the light absorbing layer;

forming an absorption pattern over the reflective layer;

etching an opening in the reflective layer such that a first portion of the light absorbing layer is covered by the reflective layer and a second portion of the light absorbing layer is exposed through the opening, wherein the first portion of the light absorbing layer is in a black border zone of the reflective mask, and the second portion of the light absorbing layer is in a image zone of the reflective mask, wherein the image zone is surrounded by the black border zone; and

filling the opening with a filling material.

15. The method of claim 14 , wherein filling the opening with the filling material is performed such that the second portion of the light absorbing layer is in contact with the filling material.

16. The method of claim 14 , wherein filling the opening with the filling material is performed such that the first portion of the light absorbing layer is free of the filling material.

17. The method of claim 14 , further comprising:

performing a roughening treatment on the second portion of the light absorbing layer such that a top surface of the second portion of the light absorbing layer is higher than a bottom surface of the reflective layer.

18. The method of claim 14 , wherein a thickness of the light absorbing layer is smaller than a thickness of the substrate.

19. The method of claim 14 , wherein the light absorbing layer comprises sp2-hybrid carbon atoms.

20. The method of claim 14 , wherein the light absorbing layer has a reflectance of less than about 3% for DUV light.