Ferroelectric semiconductor device and method
View Patent ↗A ferroelectric semiconductor device and method are described herein. The method includes performing a diffusion anneal process to drive elements of a dopant film through an amorphous silicon layer and into a gate dielectric layer over a fin to form a doped gate dielectric layer with a gradient depth profile of dopant concentrations. The doped gate dielectric layer is crystallized during a post-cap anneal process to form a gradient depth profile of ferroelectric properties within the crystallized gate dielectric layer. A metal gate electrode is formed over the crystallized gate dielectric layer to obtain a ferroelectric transistor with multi-ferroelectric properties between the gate electrode and the channel. The ferroelectric transistor may be used in deep neural network (DNN) applications.
1. A method comprising:
depositing a gate dielectric layer over a channel region of a fin;
depositing an buffer layer over the gate dielectric layer;
depositing a dopant film over the buffer layer;
performing a diffusion anneal process to form a gradient depth profile of dopant concentrations within the gate dielectric layer;
etching remaining portions of the dopant film and the buffer layer to expose the gate dielectric layer;
depositing a capping layer over the gate dielectric layer; and
performing a post-cap anneal process to crystallize the gate dielectric layer.
2. The method of claim 1 , wherein the gradient depth profile of dopant concentrations comprises a higher concentration of dopants within the gate dielectric layer adjacent to a top of the fin and a lower concentration of dopants within the gate dielectric layer adjacent to a bottom of the fin.
3. The method of claim 2 , wherein depositing the dopant film comprises depositing the dopant film with multiple thicknesses.
4. The method of claim 3 , wherein after the post-cap anneal the gate dielectric layer has a gradient depth profile of ferroelectric properties.
5. The method of claim 4 , wherein the gate dielectric layer has an orthorhombic crystalline phase.
6. The method of claim 5 , wherein the depositing the gate dielectric layer deposits hafnium oxide.
7. The method of claim 6 , wherein the depositing the dopant film deposits zirconium.
8. A method comprising:
performing a diffusion anneal process to drive dopants from a dopant film, through a buffer layer, and into a gate dielectric layer over a fin;
removing the dopant film and the buffer layer;
depositing a capping layer over the gate dielectric layer; and
crystallizing the gate dielectric layer to form a crystallized gate dielectric layer, wherein the crystallized gate dielectric layer has a first combination of crystallinity adjacent to a top of the fin and has a second combination of crystallinity adjacent to a bottom of the fin, the first combination being different from the second combination;
removing remaining portions of the capping layer; and
forming a metal gate electrode over the crystallized gate dielectric layer.
9. The method of claim 8 , prior to performing the diffusion anneal process, further comprising:
depositing the gate dielectric layer in an opening between spacers over a channel region of the fin; and
depositing the buffer layer and the dopant film over the gate dielectric layer, the dopant film having multiple thicknesses adjacent to the buffer layer.
10. The method of claim 9 , wherein the dopants comprise zirconium.
11. The method of claim 9 , wherein the opening between the spacers comprises vertical sidewalls.
12. The method of claim 9 , wherein the opening between the spacers comprises a tapered gate profile.
13. The method of claim 9 , wherein the opening between the spacers comprises a necking gate profile.
14. The method of claim 9 , wherein the opening between the spacers comprises a bamboo gate profile.
15. A method of manufacturing a semiconductor device, the method comprising:
forming a fin over a semiconductor substrate;
forming spacers disposed adjacent the fin;
forming a gate dielectric layer disposed over a channel region of the fin and between the spacers, wherein the gate dielectric layer comprises a dopant concentration gradient and a coercive field gradient, wherein the coercive field decreases as the depth from the top of the fin increases; and
forming a metal gate electrode over the gate dielectric layer.
16. The method of claim 15 , wherein the gate dielectric layer comprises a doped hafnium oxide material.
17. The method of claim 16 , wherein the doped hafnium oxide material comprises zirconium.
18. The method of claim 15 , wherein the dopant concentration decreases as the depth from the top of the fin increases.
19. The method of claim 15 , wherein the gate dielectric layer has a first crystallinity, and the first crystallinity is an orthorhombic crystalline phase.
20. The method of claim 19 , wherein the gate dielectric layer has a second crystallinity adjacent to the bottom of the fin, the second crystallinity different from the first crystallinity.