Hybrid piezoelectric microresonator
A hybrid ferroelectric/non-ferroelectric piezoelectric microresonator is disclosed. The hybrid microresonator uses a ferroelectric layer as the actuator as ferroelectric materials typically have higher actuation coefficients than non-ferroelectric piezoelectric materials. The hybrid microresonator uses a non-ferroelectric piezoelectric layer as the sensor layer as non-ferroelectric piezoelectric materials typically have higher sensing coefficients than ferroelectric materials. This hybrid microresonator design allows the independent optimization of actuator and sensor materials. This hybrid microresonator design may be used for bulk acoustic wave contour mode resonators, bulk acoustic wave solidly mounted resonators, free-standing bulk acoustic resonators, and piezoelectric transformers.
1. A hybrid piezoelectric microresonator comprising:
a first electrode;
a ferroelectric actuator layer on the first electrode;
a second electrode on the ferroelectric actuator layer;
a non-ferroelectric piezoelectric sensor layer on the second electrode; and
a third electrode on the non-ferroelectric piezoelectric sensor layer, the first and third electrodes having an interdigitated electrode structure with a common periodicity.
2. The hybrid piezoelectric microresonator of claim 1 ,
wherein the first and second electrodes are adapted to receive an input electrical signal;
wherein the second and third electrodes are adapted to transmit an output electrical signal; and
wherein the second electrode is a ground electrode.
3. The hybrid piezoelectric microresonator of claim 1 , wherein each of the first, second, and third electrodes comprises one or more layers.
4. The hybrid piezoelectric microresonator of claim 1 , wherein the first and third electrodes have a plate structure or an interdigitated electrode structure.
5. The hybrid piezoelectric microresonator of claim 1 , wherein the interdigitated electrode structure of the first electrode is horizontally aligned with the interdigitated electrode structure of the third electrode.
6. The hybrid piezoelectric microresonator of claim 1 , wherein the interdigitated electrode structure of the first electrode is offset in a horizontal direction from the interdigitated electrode structure of the third electrode by half a period of the common periodicity.
7. The hybrid piezoelectric microresonator of claim 1 , wherein the ferroelectric actuator layer comprises one of PZT, BiFeO 3 , LiNbO 3 , KNbO 3 , NaNbO 3 , (K,Na)NbO 3 , LiTaO 3 , BaTiO 3 , PbTiO 3 , SrTiO 3 , (Ba,Sr)TiO 3 , and PVDF.
8. The hybrid piezoelectric microresonator of claim 1 , wherein the non-ferroelectric piezoelectric sensor layer comprises one of AlN, GaN, InN, Sc x Al (1-x) N, and ZnO.
9. The hybrid piezoelectric microresonator of claim 1 further comprising a cavity, the cavity being on a side of the first electrode opposite the ferroelectric actuator layer or on a side of the third electrode opposite the non-ferroelectric piezoelectric sensor layer.
10. The hybrid piezoelectric microresonator of claim 9 ,
wherein the hybrid piezoelectric microresonator is a bulk acoustic wave contour mode resonator; and
wherein a resonant frequency of the bulk acoustic wave contour mode resonator is a function of at least a width and a length of the bulk acoustic wave contour mode resonator.
11. The hybrid piezoelectric microresonator of claim 9 ,
wherein the hybrid piezoelectric microresonator is a free-standing bulk acoustic resonator; and
wherein a resonant frequency of the free-standing bulk acoustic resonator is a function of at least a combined thickness of the first electrode, the ferroelectric actuator layer, the second electrode, the non-ferroelectric piezoelectric sensor layer, and the third electrode.
12. The hybrid piezoelectric microresonator of claim 1 further comprising an acoustic Bragg reflector, the acoustic Bragg reflector being on a side of the first electrode opposite the ferroelectric actuator layer or on a side of the third electrode opposite the non-ferroelectric piezoelectric sensor layer.
13. The hybrid piezoelectric microresonator of claim 12 ,
wherein the hybrid piezoelectric microresonator is a bulk acoustic wave solidly mounted resonator; and
wherein a resonant frequency of the bulk acoustic wave solidly mounted resonator is a function of at least a combined thickness of the first electrode, the ferroelectric actuator layer, the second electrode, the non-ferroelectric piezoelectric sensor layer, and the third electrode.
14. The hybrid piezoelectric microresonator of claim 1 wherein the hybrid piezoelectric microresonator is a hybrid piezoelectric transformer.
15. The hybrid piezoelectric microresonator of claim 1 further comprising at least one etch stop layer.
16. The hybrid piezoelectric microresonator of claim 15 , wherein one of the at least one etch stop layers is located between the first electrode and the ferroelectric actuator layer.
17. The hybrid piezoelectric microresonator of claim 15 , wherein one of the at least one etch stop layers is located between the second electrode and the non-ferroelectric piezoelectric sensor layer.
18. The hybrid piezoelectric microresonator of claim 1 further comprising:
a first etch stop layer, the first etch stop layer being located between the first electrode and the ferroelectric actuator layer; and
a second etch stop layer, the second stop layer being located between the second electrode and the non-ferroelectric piezoelectric sensor layer.
19. The hybrid piezoelectric microresonator of claim 1 wherein a thickness and a composition of each of the first electrode, the ferroelectric actuator layer, the second electrode, the non-ferroelectric piezoelectric sensor layer, and the third electrode are adapted to cause the hybrid piezoelectric microresonator to be temperature self-compensating.