IP Library Granted Patent US 11,898,061
Granted Patent B2
US 11,898,061 · App. 16/658,589 · Granted Feb 13, 2024

Modified conductive structure and method for producing the same

Inventors: Hsin-Chieh Lin (Taoyuan, TW); Chih Chang (Taichung, TW); Chin Pen Lai (Minxiong Township, TW); Wang-Chin Cheng (Zhubei, TW)
Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
C09D5/1662A61B5/14532A61B5/14865A61N1/05C08G61/126C09D5/24C09D165/00C12Q1/005C25D9/02H01B1/127H01B5/002C08G2261/1424C08G2261/3223C08G2261/344C08G2261/51C08G2261/94
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Quick Facts
Patent No.
US 11,898,061
App. No.
16/658,589
Granted
Feb 13, 2024
Kind
B2
Abstract

A modified conductive structure includes a conductive substrate and a polymer film disposed over a surface of the polymer film. A chemical bond exists between the polymer film and the conductive substrate, and the polymer film includes repeating units as shown below: wherein A is an antifouling molecule group; B is a sulfur-containing group or a nitrogen-containing group; R is a single bond or a first linking group; C is -L-E, wherein L is a second linking group, E is an enzyme unit; x and z are each independently 0 or an integer from 1 to 10000, and y is an integer from 1 to 10000; o is 0 or an integer from 1 to 50, and when o is an integer from 1 to 50, m and n are each independently 0 or an integer from 1 to 50.

Claims (17)

1. A modified conductive structure, comprising:

a conductive substrate; and

a polymer film disposed over a surface of the conductive substrate, wherein a chemical bond exists between the polymer film and the conductive substrate, and the polymer film comprises repeating units as shown below:

wherein A is an antifouling molecule group; B is 1,2-dithiolane; R is a single bond or a first linking group; C is -L-E, wherein L is a second linking group, E is an enzyme unit; x and z are each independently 0 or an integer from 1 to 10000, and y is an integer from 1 to 10000; o is 0 or an integer from 1 to 50, and when o is an integer from 1 to 50, m and n are each independently 0 or an integer from 1 to 50.

2. The modified conductive structure as claimed in claim 1 , wherein the first linking group is ester, amide, thioester, ether, amine, ketone, sulfide, carbonate, carbamate, or a combination thereof.

3. The modified conductive structure as claimed in claim 1 , wherein o is an integer from 1 to 50, and a plurality of R are the same or different from each other.

4. The modified conductive structure as claimed in claim 1 , wherein A is betaine, amino acid, peptide, a polymer of 2-hydroxyethyl methacrylate (HEMA), polyethylene glycol, hydroxyl group, or a combination thereof.

5. The modified conductive structure as claimed in claim 4 , wherein the betaine comprises phosphobetaine (PB), sulfobetaine (SB), carboxybetaine (CB), or a combination thereof.

6. The modified conductive structure as claimed in claim 4 , wherein the amino acid comprises cysteine (Cys), aspartic acid (Asp), glutamic acid (Glu), lysine (Lys), or a combination thereof.

7. The modified conductive structure as claimed in claim 4 , wherein the peptide comprises 1 to 20 amino acids and the structure of the peptide comprises Asp-Cys, Glu-Cys, Cys-Lys, Cys-Lys-Cys-Lys, or a combination thereof.

8. The modified conductive structure as claimed in claim 1 , wherein the second linking group comprises maleimide (MI), acrylate, methacrylate, or a combination thereof.

9. The modified conductive structure as claimed in claim 1 , wherein the enzyme unit comprises glucose oxidase, glucose dehydrogenase, pyrroloquinoline quinine glucose dehydrogenase A (PQQGDH-A), pytToquinoline quinone glucose dehydrogenase B (PQQGDH-B), NAD (P)-dependent glutamate dehydrogenase (NAD(P)-GDH), FAD-dependent glutamate dehydrogenase (FADGDH), uricase, urate oxidase, cholesterol oxidase, sulfur-containing enzyme, or a combination thereof.

10. The modified conductive structure as claimed in claim 1 , wherein the material of the conductive substrate comprises a conductive material, a semiconductor material, or a combination thereof.

11. The modified conductive structure as claimed in claim 10 , wherein the conductive substrate comprises the semiconductor material having the conductive material on a surface of the semiconductor material.

12. The modified conductive structure as claimed in claim 10 , wherein the conductive material comprises gold (Au), platinum (Pt), aluminum (Al), iridium (Ir), titanium (Ti), steel, stainless steel, gold alloy, platinum alloy, platinum alloy, aluminum alloy, iridium alloy, titanium alloy, or a combination thereof.

13. The modified conductive structure as claimed in claim 10 , wherein the conductive material comprises a conductive oxide, a carbon material, or a combination thereof.

14. The modified conductive structure as claimed in claim 10 , wherein the semiconductor material comprises silicon (Si).

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 30, 2020
From: LIN, HSIN-CHIEH; CHANG, CHIH; LAI, CHIN PEN; CHENG, WANG-CHIN
To: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
Reel/Frame 052263/0238 →
Continuity (2)
Provisional Application 62754833 · Nov 2, 2018
Related Publication 20200157360A1 · May 21, 2020