IP Library Patent Application 16659096
Patent Application
App. No. 16/659,096

X RAY-TO-INFRARED CONVERSION STRUCTURES FOR ILLUMINATING X RAY DETECTORS WITH INFRARED LIGHT TO IMPROVE PERFORMANCE

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Patent No.
US None
App. No.
16/659,096
Abstract

Various embodiments include a structure that is configured to emit infrared (IR) light when exposed to ionizing radiation, such as X ray and gamma radiation, and to be positioned adjacent to a radiation detector so that infrared light illuminates the radiation detector when the structure and detector are exposed to the ionizing radiation. The structure may include a layer that is opaque to ultraviolet (UV) and visible light, another layer that is opaque to UV and visible light, and an intermediate layer that is configured to emit IR light when exposed to ionizing radiation. The intermediate layer may be a single layer. The intermediate layer may be two layers including a layer configured to emit UV or visible light when exposed to ionizing radiation and a layer configured to emit IR light when exposed to UV or visible light.

Claims (39)

1 . A structure for use in an imaging system, comprising:

a first layer comprising a material that is opaque to ultraviolet (UV) and visible light;

a second layer comprising a material configured to emit UV or visible light upon exposure to ionizing radiation;

a third layer comprising a material configured to emit infrared (IR) light upon exposure to UV or visible light; and

a fourth layer comprising a material that is opaque to ultraviolet (UV) and visible light but transparent to IR light.

2 . A structure for use in imaging systems, comprising:

a first layer comprising a material that is opaque to ultraviolet (UV) and visible light;

a second layer comprising a material configured to emit infrared (IR) light upon exposure to ionizing radiation; and

a third layer comprising a material that is opaque to ultraviolet (UV) and visible light but transparent to IR light.

3 . The structure claim 1 , wherein the structure is configured to be positioned in proximity to a radiation detector array within the imaging system.

4 . The structure of claim 1 , wherein the first layer is aluminum or an aluminum alloy.

5 . The structure of claim 1 , wherein the second layer comprises a material selected from the group anthracene (C 14 H 10 ), stilbene (C 14 H 12 ), naphthalene (C 10 H 8 ), p-terphenyl (C 18 H 14 ), PBD (C 20 H 14 N 2 O), butyl PBD (C 24 H 22 N 2 O), PPO (C 15 H 11 NO), POPOP (C 24 H 16 N 2 O), polyethylene naphthalate (C 14 H 10 O 4 ) n ), polyphenyl hydrocarbons, oxazole and oxadiazole aryls, n-terphenyl (PPP), 2,5-diphenyloxazole (PPO), 1,4-di-(5-phenyl-2-oxazolyl)-benzene (POPOP), 2-phenyl-5-(4-biphenylyl)-1,3,4-oxadiazole (PBD), tert-butylphenyl)-5-(4″-biphenylyl)-1,3,4-oxadiazole (B-PBD), as Gd 2 O 2 S:Tb, thallium-doped sodium iodide (NaI(Tl)), CsI(Tl), CsI(Na), CsI(pure), CsF, KI(Tl), LiI(Eu), CsI(Tl), CsI(Na), CsI(pure), CsF, KI(Tl), LiI(Eu), BaF 2 , CaF 2 (Eu), ZnS(Ag), CaWO 4 , CdWO 4 , YAG(Ce) (Y 3 Al 5 O 12 (Ce)), GSO, LSO, LaCl 3 (Ce), lanthanum chloride doped with cerium, cerium-doped lanthanum bromide (LaBr 3 (Ce)), LYSO (Lu 1.8 Y 0.2 SiO 5 (Ce)), or cerium-activated lithium or boron silicates.

6 . The structure of claim 1 , wherein the second layer comprises a Gd 2 O 2 S:Tb crystal.

7 . The structure of claim 1 , wherein the third layer comprises a material selected from the group of neodymium-doped glass, ytterbium-doped glass, holmium-doped glass, thulium-doped glass, erbium-doped glass, or Ca 14 Zn 6 Al 10 O 35 : Mn 4+ , Nd 3+ /Yb 3+ .

8 . The structure of claim 1 , wherein the third layer comprises neodymium doped yttrium aluminum garnet (Nd:YAG).

9 . The structure of claim 1 , wherein the fourth layer comprises a CdZnTe crystal or sapphire.

10 . The structure of claim 2 , wherein the third layer comprises a CdZnTe crystal or sapphire.

11 . The structure of claim 1 , wherein an interior surface of the first layer is configured to reflect UV and visible light.

12 . The structure of claim 1 , wherein an interior surface of the fourth layer is configured to reflect UV and visible light.

13 . The structure of claim 2 , wherein an interior surface of the third layer is configured to reflect UV and visible light.

14 . The structure of claim 1 , wherein the ionizing radiation is X ray radiation or gamma radiation.

15 . An imaging system, comprising:

a source of ionizing radiation;

a radiation detector; and

a structure positioned adjacent to the radiation detector and configured to emit infrared radiation when exposed to the ionizing radiation.

16 . The imaging system of claim 15 , wherein the structure comprises:

a first layer comprising a material that is opaque to ultraviolet (UV) and visible light;

a second layer comprising a material configured to emit UV or visible light upon exposure to ionizing radiation;

a third layer comprising a material configured to emit infrared (IR) light upon exposure to UV or visible light; and

a fourth layer comprising a material that is opaque to ultraviolet (UV) and visible light but transparent to IR light.

17 . The imaging system of claim 16 , wherein the source of ionizing radiation comprises an X-ray source configured to emit the ionizing radiation which comprises X ray radiation.

18 . The imaging system of claim 16 , wherein the ionizing radiation is gamma radiation.

19 . A method of imaging an object using ionizing radiation, comprising:

providing a radiation detector and a structure configured to emit infrared radiation when exposed to ionizing radiation located adjacent to the radiation detector; and

exposing the object to ionizing radiation so that the ionizing radiation passes through the object, through the structure and into the radiation detector.

20 . The method of claim 19 , wherein:

the structure emits infrared radiation upon exposure to the ionizing radiation;

the infrared radiation and the ionizing radiation are provided into the radiation detector; and

the ionizing radiation comprises X ray or gamma radiation.

Assignments (3)
RELEASE OF SECURITY INTEREST Recorded Mar 30, 2023
From: THE BUSINESS DEVELOPMENT BANK OF CANADA
To: REDLEN TECHNOLOGIES INC.
Reel/Frame 063170/0719 →
SECURITY INTEREST Recorded Apr 15, 2020
From: REDLEN TECHNOLOGIES INC.
To: BUSINESS DEVELOPMENT BANK OF CANADA
Reel/Frame 052407/0903 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 8, 2019
From: TAHERION, SAEID; PREKAS, GEORGIOS
To: REDLEN TECHNOLOGIES, INC.,
Reel/Frame 050959/0357 →