Image sensor and method of fabricating thereof
A color filter is disposed on a substrate. An organic photodiode is disposed on the color filter. The organic photodiode includes an electrode insulating layer having a recess region on the substrate, a first electrode on the color filter, the first electrode filling the recess region of the electrode insulating layer, a second electrode on the first electrode, and an organic photoelectric conversion layer interposed between the first electrode and the second electrode. The first electrode includes a seam extending at a first angle from a side surface of the recess region of the electrode insulating layer.
1. An image sensor, comprising:
an organic photoelectric conversion layer interposed between a first electrode and a second electrode;
a first contact plug connected to the first electrode;
a via connected to the first contact plug;
a second contact plug connected to the via;
an interconnection layer in an interlayer insulating layer and connected to the second contact plug; and
an interconnection via connected to the interconnection layer and a storage node in a substrate,
wherein the first electrode has an increasing width from the first contact plug toward the organic photoelectric conversion layer,
wherein the substrate has a first surface and a second surface opposing the first surface,
wherein the first contact plug is disposed on the first surface, and
wherein the interconnection via is disposed on the second surface.
2. The image sensor of claim 1 , wherein the second contact plug partially penetrates the via.
3. The image sensor of claim 1 , wherein the first contact plug has a decreasing width from the first electrode toward the via.
4. The image sensor of claim 1 , wherein the second contact plug has an increasing width from the via toward the interconnection layer.
5. The image sensor of claim 4 , wherein the first contact plug has a decreasing width from the first electrode toward the via.
6. The image sensor of claim 1 , further comprising a capping insulating layer under the first electrode, and
wherein a lower surface of the first electrode is coplanar with an upper surface of the capping insulating layer.
7. The image sensor of claim 1 , wherein the interconnection via has a cylindrical shape.
8. The image sensor of claim 7 , wherein the interconnection via is disposed to be perpendicular to a lower surface of the substrate.
9. The image sensor of claim 1 , wherein the via penetrates the substrate.
10. The image sensor of claim 1 , wherein the first electrode is electrically connected to the storage node through the first contact plug, the via, the second contact plug, the interconnection layer, and the interconnection via.
11. The image sensor of claim 1 , wherein the second contact plug and the interconnection via are disposed on an upper surface of the interconnection layer.
12. An image sensor, comprising:
a first photodiode including a first electrode and a second electrode;
a second photodiode below the first photodiode;
a first contact plug connected to the first electrode;
a via connected to the first contact plug;
a second contact plug connected to the via;
an interconnection layer in an interlayer insulating layer and connected to the second contact plug; and
an interconnection via connected to the interconnection layer and a storage node in a substrate,
wherein the first electrode has an increasing width from the first contact plug toward an organic photoelectric conversion layer.
13. The image sensor of claim 12 , wherein the second contact plug extends into the via.
14. The image sensor of claim 12 , wherein the first photodiode is above a first surface of the substrate and the interlayer insulating layer is on a second surface of the substrate.
15. The image sensor of claim 12 , further comprising:
an electrode insulating layer surrounding lateral surfaces of the first electrode.
16. The image sensor of claim 15 , wherein the electrode insulating layer has a decreasing width from a lower surface thereof toward an upper surface thereof.
17. An image sensor, comprising:
a substrate having a storage node;
a first photodiode including a first electrode, a second electrode, an organic photoelectric conversion layer between the first electrode and the second electrode, and an electrode insulating layer having a recess region on which the first electrode is disposed; and
a second photodiode below the first photodiode,
wherein the first electrode has an increasing width from a first contact plug toward the organic photoelectric conversion layer, and
the first electrode is electrically connected to the storage node through a plurality of contact plugs disposed vertically below the first electrode.
18. The image sensor of claim 17 , wherein the electrode insulating layer has a decreasing width from a lower surface thereof toward an upper surface thereof.