Method for producing ingot, raw material for ingot growth, and method for preparing the raw material
A method for producing an ingot includes loading a raw material comprising a raw material powder having a D 50 of 80 μm or more into a reactor (loading step), controlling the internal temperature of the reactor such that adjacent particles of the raw material powder are interconnected to form a necked raw material (necking step), and sublimating components of the raw material from the necked raw material to grow an ingot (ingot growth step).
1. A method for producing an ingot, comprising:
loading a raw material comprising a raw material powder comprising a D 50 of 80 μm or more into a reactor;
controlling an internal temperature of the reactor such that adjacent particles of the raw material powder are interconnected to form a necked raw material; and
sublimating the raw material from the necked raw material to grow an ingot,
wherein the necked raw material comprises a carbide layer on a surface thereof, wherein the carbide layer comprises a higher carbon content than a central portion of particles of the raw material powder.
2. The method according to claim 1 , wherein when an inherent density of the raw material is defined as 100, a tap density of the raw material powder is 69 or less.
3. The method according to claim 1 , wherein the controlling the internal temperature of the reactor comprises raising temperature and a subsequent heat treatment, and the subsequent heat treatment is performed at a temperature of 1,800° C. or more.
4. The method according to claim 1 , wherein the controlling the internal temperature of the reactor is carried out at a pressure of 350 torr or more.
5. The method according to claim 1 , wherein a tap density of the raw material powder is 2.1 g/cm 3 or less.
6. The method according to claim 1 , wherein, in the sublimating the raw material, the ingot grows at a rate of 180 μm/hr or more.
7. The method according to claim 1 , wherein the raw material powder comprises SiC particles.
8. The method according to claim 1 , wherein the ingot is a SiC ingot.
9. A raw material for ingot growth comprising a raw material powder comprising particles comprising a D 50 of 80 μm or more, wherein the raw material powder comprises a necked raw material in which at least portions of adjacent particles of the raw material powder are physically connected to one another, wherein particles of the raw material powder are crystalline particles having an aspect ratio of 0.3 to 1.
10. The raw material for ingot growth according to claim 9 , wherein when an inherent density of the raw material is defined as 100, a tap density of the necked raw material is 69 or less.
11. The raw material for ingot growth according to claim 9 , wherein the necked raw material comprises a carbide layer on a surface thereof, wherein the carbide layer comprises a higher carbon content than a central portion of the particles of the raw material powder.
12. The raw material for ingot growth according to claim 9 , wherein a difference in a weight of the raw material for ingot growth before and after inhalation at an air flow of 20 m 3 /min and a static pressure of 230 mmAq is 2% by weight or less.
13. A method for preparing the raw material for ingot growth according to claim 9 , comprising: loading a raw material comprising a raw material powder having a D 50 of 80 μm or more into a reactor; and controlling an internal temperature of the reactor such that adjacent particles of the raw material powder are interconnected to form a necked raw material.
14. A method for producing an ingot, comprising:
loading a raw material comprising a raw material powder comprising a D 50 of 80 μm or more into a reactor, wherein the raw material powder comprises a necked raw material in which portions of adjacent particles of the raw material powder are physically connected to one another; and
sublimating the raw material from the necked raw material to grow an ingot,
wherein a difference in a weight of the raw material before and after inhalation at an air flow of 20 m 3 /min and a static pressure of 230 mmAq is 2% by weight or less.
15. The method according to claim 14 , wherein when an inherent density of the raw material is defined as 100, and a tap density of the raw material powder is 69 or less.
16. The method according to claim 14 , wherein the necked raw material is prepared by raising temperature and subsequent heat treatment, and the subsequent heat treatment is performed at a temperature of 1,800° C. or more.
17. The method according to claim 14 , wherein the necked raw material is prepared at a pressure of 350 torr or more.
18. The method according to claim 14 , wherein a tap density of the raw material powder is 2.1 g/cm 3 or less.
19. The method according to claim 14 , wherein, in the sublimating the raw material, the ingot grows at a rate of 180 μm/hr or more.
20. The method according to claim 14 , wherein the raw material powder comprises SiC particles.