Plasma processing apparatus and data analysis apparatus
In time-series data indicating light emission of plasma when plasma processing is carried out on a sample by generating the plasma, an analysis apparatus creates combinations of a plurality of light emission wavelengths of elements and a plurality of time intervals within a plasma processing interval and calculates, for each of the combinations of the wavelengths and the time intervals, a correlation between an average value of light emission intensity and the number of times the plasma processing is carried out on the samples for each of the combinations of the wavelengths and the time intervals that have been created. Thereafter, the data analysis apparatus selects, as a combination of the wavelength and the time interval used to observe or control the plasma processing, a combination of a wavelength of light emitting from a specific element and a specific time interval having a maximum correlation.
1. An apparatus comprising: a computing unit configured to: analyze light emission data, obtained by a process monitor, of a plasma etching processing of a sample at a plurality of wavelengths of light at a plurality of time intervals; acquire correlation data at each of a plurality of combinations of respective time intervals and respective wavelengths, wherein the correlation data includes, for each of the plurality of combinations of the respective time intervals and the respective wavelengths, a respective direction of correlation between a respective light emission intensity for a respective wavelength, determine elements of the plasma having the respective direction of correlation which match each other, and identify an optimum combination of the time interval and the wavelength from the combinations of the respective time intervals and the respective wavelengths by using the correlation data corresponding to the determined elements as an indicator, and output a signal to a controller; and the controller is configured to receive the signal output by the computing unit and control the plasma etching processing of the sample using the identified optimum combination of the time interval and the wavelength to reduce a number of combinations of the time interval and the wavelength used to control the plasma etching processing.
2. The apparatus according to claim 1 ,
wherein the computing unit is further configured to acquire the correlation data per lot, the lot being a group of samples subjected to the plasma etching processing between a cleaning processing.
3. The apparatus according to claim 1 ,
wherein the computing unit is further configured to compute the correlation data such that respective time intervals in which there is too much variation in the light emission intensity are excluded from being identified as a target of analysis.
4. The apparatus according to claim 2 ,
wherein the respective light emission intensity is an average value of the respective light emission data for the respective time interval.
5. The apparatus according to claim 2 ,
wherein the respective time intervals are acquired by dividing stable intervals in which the light emission intensity of plasma etching processing is under a stable condition.