Methods and apparatus for processing a substrate
Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate includes applying at least one of low frequency RF power or DC power to an upper electrode formed from a high secondary electron emission coefficient material disposed adjacent to a process volume; generating a plasma comprising ions in the process volume; bombarding the upper electrode with the ions to cause the upper electrode to emit electrons and form an electron beam; and applying a bias power comprising at least one of low frequency RF power or high frequency RF power to a lower electrode disposed in the process volume to accelerate electrons of the electron beam toward the lower electrode.
1. A method for processing a substrate, comprising:
applying at least one of low frequency RF power or DC power to an upper electrode formed from a high secondary electron emission coefficient material disposed adjacent to a process volume;
generating a plasma comprising ions in the process volume;
bombarding the upper electrode with the ions to cause the upper electrode to emit electrons and form an electron beam;
applying a bias power comprising at least one of low frequency RF power or high frequency RF power to a lower electrode disposed in the process volume to accelerate electrons of the electron beam toward the lower electrode; and
applying the at least one of low frequency RF power or DC power in a continuous mode to the upper electrode, and
wherein applying the bias power comprises applying low frequency RF power to the lower electrode in a pulsing mode, such that a given pulse of low frequency RF power provides a voltage to the lower electrode that is less than a voltage applied to the upper electrode during at least some portion of a sinusoidal cycle of the low frequency RF power.
2. The method of claim 1 , wherein the high secondary electron emission coefficient material is at least one of silicon (Si), silicon nitride (SiN), silicon oxide (SiOx), or carbon (C).
3. The method of claim 1 , wherein generating the plasma comprising the electrons comprises introducing at least one of helium (He), argon (Ar), hydrogen (H2), hydrogen bromide (HBr), ammonia (NH3), disilane (Si2H6), methane (CH4), acetylene (C2H2), nitrogen trifluoride (NF3), tetrafluoromethane (CF4), sulfur hexafluoride (SF6), carbon monoxide (CO), carbonyl sulfide (COS), trifluoromethane (CHF3), hexafluorobutadiene (C4F6), chlorine (Cl2), nitrogen (N2), or oxygen (O2) into the process volume.
4. The method of claim 1 , further comprising maintaining the upper electrode from a process position for processing a substrate at a distance of about 2 inches to about 20 inches.
5. The method of claim 1 , further comprising maintaining a pressure within the process volume from about 0.1 mTorr to about 300 mTorr.
6. The method of claim 1 , further comprising applying high frequency RF power in conjunction with the at least one of low frequency RF power or DC power to the upper electrode.
7. The method of claim 1 , further comprising applying the at least one of low frequency RF power or DC power to the upper electrode in a pulse mode, and
wherein applying the bias power comprises applying low frequency RF power to the lower electrode in the pulsing mode, such that when the at least one of low frequency RF power or DC power to the upper electrode is pulsed on, the low frequency RF power to the lower electrode is pulsed off.
8. A nontransitory computer readable storage medium having stored thereon instructions that when executed by a processor configure the processor to perform a method for processing a substrate, comprising:
applying at least one of low frequency RF power or DC power to an upper electrode formed from a high secondary electron emission coefficient material disposed adjacent to a process volume;
generating a plasma comprising ions in the process volume;
bombarding the upper electrode with the ions to cause the upper electrode to emit electrons and form an electron beam;
applying a bias power comprising at least one of low frequency RF power or high frequency RF power to a lower electrode disposed in the process volume to accelerate electrons of the electron beam toward the lower electrode; and
applying the at least one of low frequency RF power or DC power in a continuous mode to the upper electrode, and
wherein applying the bias power comprises applying low frequency RF power to the lower electrode in a pulsing mode, such that a given pulse of low frequency RF power provides a voltage to the lower electrode that is less than a voltage applied to the upper electrode during at least some portion of a sinusoidal cycle of the low frequency RF power.
9. The nontransitory computer readable storage medium of claim 8 , wherein the high secondary electron emission coefficient material is at least one of silicon (Si), silicon nitride (SiNi), silicon oxide (SiOx), or carbon (C).
10. The nontransitory computer readable storage medium of claim 8 , wherein generating the plasma comprising the electrons comprises introducing at least one of helium (He), argon (Ar), hydrogen (H2), hydrogen bromide (HBr), ammonia (NH3), disilane (Si2H6), methane (CH4), acetylene (C2H2), nitrogen trifluoride (NF3), tetrafluoromethane (CF4), sulfur hexafluoride (SF6), carbon monoxide (CO), carbonyl sulfide (COS), trifluoromethane (CHF3), hexafluorobutadiene (C4F6), chlorine (Cl2), nitrogen (N2), or oxygen (O2) into the process volume.
11. The nontransitory computer readable storage medium of claim 8 , further comprising maintaining the upper electrode from a process position for processing a substrate at a distance of about 1 inch to about 20 inches.