IP Library Granted Patent US 10,998,168
Granted Patent B2
US 10,998,168 · App. 16/669,711 · Granted May 4, 2021

Plasma processing apparatus

Inventors: Yusaku Sakka (Shunan, JP); Ryoji Nishio (Kudamatsu, JP); Tadayoshi Kawaguchi (Kudamatsu, JP)
Assignee: HITACHI HIGH-TECH CORPORATION
H01J37/3211H01J37/32651
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Quick Facts
Patent No.
US 10,998,168
App. No.
16/669,711
Granted
May 4, 2021
Kind
B2
Abstract

In a plasma processing apparatus that can adjust an induction magnetic field distribution of power feeding sections of an induction coil, correct a plasma distribution on a specimen, and apply uniform plasma processing to the specimen, the specimen is subjected to plasma processing, a dielectric window that forms the upper surface of the vacuum processing chamber, a gas lead-in section that leads gas into the vacuum processing chamber, a specimen table that is arranged in the vacuum processing chamber and on which the specimen is placed, an induction coil provided above the dielectric window, and a radio-frequency power supply that supplies radio-frequency power to the induction coil. The plasma processing apparatus includes a flat conductor arranged below the induction coil. The induction coil includes crossing power feeding sections. The conductor is arranged below the power feeding sections.

Claims (12)

1. A plasma processing apparatus comprising:

a vacuum processing chamber for processing a specimen;

a dielectric window forming an upper face of the vacuum processing chamber;

a gas supply device for introducing a gas into the vacuum processing chamber;

a specimen table arranged in the vacuum processing chamber to hold thereon the specimen;

an induction coil arranged above the dielectric window; and

a radio-frequency electric power source for supplying a radio-frequency electric power to the induction coil;

wherein the plasma processing apparatus further comprises at least one electric conductor, each of the at least one electric conductor comprising a flat plate; and

wherein the induction coil has at least one crossed electric power supply portion, and each of the at least one electric conductor is arranged between the at least one crossed electric power supply portion and a faraday shield.

2. The plasma processing apparatus according to claim 1 , wherein the vacuum processing chamber is electrically grounded, and the electrical conductor is electrically connected to the vacuum processing chamber.

3. The plasma processing apparatus according to claim 1 , wherein the electric conductor has a shape enabling a circulating induced electric current to be generated.

4. The plasma processing apparatus according to claim 1 , wherein a number of the at least one electric conductor corresponds to a number of the at least one crossed electric power supply portion.

Assignments (1)
CHANGE OF NAME Recorded Mar 25, 2020
From: HITACHI HIGH-TECHNOLOGIES CORPORATION
To: HITACHI HIGH-TECH CORPORATION
Reel/Frame 052220/0045 →
Priority Claims (1)
JP JP2011-220611 · Oct 5, 2011 · national
Continuity (2)
Division 13363427 · Feb 1, 2012
Related Publication 20200066487A1 · Feb 27, 2020