Semiconductor device
A semiconductor device includes a fin-type pattern extending in a first direction, a device isolation film surrounding the fin-type pattern, while exposing an upper portion of the fin-type pattern, a gate electrode extending on the device isolation film and the fin-type pattern in a second direction intersecting the first direction, a gate isolation film isolating the gate electrode in the second direction, and including a first material and on the device isolation film, an interlayer insulating film filling a side surface of the fin-type pattern and including a second material different from the first material.
1. A semiconductor device, comprising:
a first fin pattern extending in a first direction;
a device isolation film surrounding the first fin pattern and exposing an upper portion of the first fin pattern;
first and second gate lines being adjacent to each other and extending in a second direction intersecting the first direction on the device isolation film and the first fin pattern;
first and second gate isolations spaced apart from each other in the second direction, isolating the first and second gate lines and contacting the device isolation film;
third to fifth gate isolations sequentially disposed along the second direction between the first and second gate isolations, each of the third to fifth gate isolations isolating one of the first and second gate lines; and
an interlayer insulating film surrounding the first to fifth gate isolations on the device isolation film,
wherein the first gate line is divided into three portions between the first and second gate isolations,
wherein the second gate line is divided into two portions between the first and second gate isolations, and
wherein the interlayer insulating film has a material different from a material of the first to fifth gate isolations.
2. The semiconductor device of claim 1 , wherein each of the third and fifth gate isolations isolates the first gate line.
3. The semiconductor device of claim 1 , wherein the fourth gate isolation isolates the second gate line.
4. The semiconductor device of claim 1 , wherein each of the third and fifth gate isolations overlap the first gate line in the second direction, and
wherein the fourth gate isolation overlaps the second gate line in the second direction.
5. The semiconductor device of claim 4 , wherein the fourth gate isolation does not contact the first gate line.
6. The semiconductor device of claim 1 , wherein the third and fifth gate isolations are disposed at symmetrical positions with respect to the fourth gate isolation.
7. The semiconductor device of claim 6 , wherein the third and fifth gate isolations overlap in the second direction.
8. The semiconductor device of claim 1 , further comprising a second fin pattern extending in the first direction between the first and second gate isolations,
wherein the fourth gate isolation is disposed between the first and second fin patterns.
9. The semiconductor device of claim 8 , wherein the first fin pattern is adjacent to the first gate isolation, and
wherein the third gate isolation is disposed between the first fin pattern and the first gate isolation.
10. The semiconductor device of claim 1 , wherein the interlayer insulating film comprises silicon oxide.
11. A semiconductor device, comprising:
first and second gate lines being adjacent in a first direction and extending in a second direction intersecting the first direction;
first and second gate isolations spaced apart from each other in the second direction and isolating the first and second gate lines;
third to fifth gate isolations sequentially disposed along the second direction between the first and second gate isolations, each of the third to fifth gate isolations isolating one of the first and second gate lines; and
an interlayer insulating film surrounding the first to fifth gate isolations,
wherein the first gate line is divided into three portions between the first and second gate isolations,
wherein the second gate line is divided into two portions between the first and second gate isolations,
wherein the first to fifth gate isolations comprise a same material, and
wherein the interlayer insulating film has a material different from a material of the first to fifth gate isolations.
12. The semiconductor device of claim 11 , wherein each of the third and fifth gate isolations overlap the first gate line in the second direction, and
wherein the fourth gate isolation overlaps the second gate line in the second direction.
13. The semiconductor device of claim 11 , wherein the third and fifth gate isolations are disposed at symmetrical positions with respect to the fourth gate isolation.
14. The semiconductor device of claim 13 , wherein the third and fifth gate isolations overlap in the second direction.
15. The semiconductor device of claim 11 , wherein the first gate line is separated by the first, second, third and fifth gate isolations.
16. The semiconductor device of claim 11 , wherein the second gate line is separated by the first, second and fourth gate isolations.
17. The semiconductor device of claim 11 , wherein the interlayer insulating film comprises silicon oxide.
18. A semiconductor device, comprising:
first and second gate lines being adjacent in a first direction and extending in a second direction intersecting the first direction;
first and second gate isolations spaced apart from each other in the second direction and isolating the first and second gate lines;
third to fifth gate isolations sequentially disposed along the second direction between the first and second gate isolations, each of the third to fifth gate isolations isolating one of the first and second gate lines; and
an interlayer insulating film surrounding the first to fifth gate isolations,
wherein the first gate line is divided into three portions between the first and second gate isolations,
wherein the second gate line is divided into two portions between the first and second gate isolations,
wherein the third and fifth gate isolations are disposed at symmetrical positions with respect to the fourth gate isolation,
wherein the interlayer insulating film comprises silicon oxide, and
wherein each of the first to fifth gate isolations has a material different from a material of the interlayer insulating film.
19. The semiconductor device of claim 18 , wherein each of the third and fifth gate isolations overlap the first gate line in the second direction, and
wherein the fourth gate isolation overlaps the second gate line in the second direction.
20. The semiconductor device of claim 18 , wherein the first gate line is separated by the first, second, third and fifth gate isolations, and
wherein the second gate line is separated by the first, second and fourth gate isolations.